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    • 2. 发明公开
    • Broad band surface acoustic wave edge deposited transducer
    • 宽带表面波形边缘沉积传感器
    • EP0104740A3
    • 1986-02-19
    • EP83304744
    • 1983-08-16
    • TEXAS INSTRUMENTS INCORPORATED
    • Wagers, Robert S.
    • H03H09/145H03H03/08
    • H03H9/14502
    • Disclosed is a method for fabricating and structure for a broad band surface acoustic wave (SAW) edge deposited transducer (EDT) (10) capable of frequencies in excess of 1 GHz and bandwidths in the hundreds of MHz. The method and apparatus allows fabrication of such a transducer on a semiconductor substrate (12) which is either non-piezoelectric or weakly piezoelectric. The substrate is formed such as to have a sharp, smooth edge (20) formed by the intersection of its top (18) and a side surface (16). A passivation layer (24) is deposited on the side surface of the substrate followed by a starter layer (34) to provide adhesion and nucleation sites. An inner metallic (gold, for example) electrode (26) is then deposited on the starter layer followed by a transducer layer (40) being deposited on the inner metallic electrode. An outer metallic electrode (36) is then deposited on the transducer layer a predetermined distance below the top surface of the substrate. When the transducer is excited, bulk longitudinal waves are generated in the transducer layer which couple to the longitudinal component of the surface wave in the substrate causing the SAW mode to propagate away from the transducer (10).
    • 3. 发明公开
    • Broad band surface acoustic wave edge deposited transducer
    • AkustischerOberflächenwellenwandlerauf der Seite eines Substrats deponiert。
    • EP0104740A2
    • 1984-04-04
    • EP83304744.2
    • 1983-08-16
    • TEXAS INSTRUMENTS INCORPORATED
    • Wagers, Robert S.
    • H03H9/145H03H3/08
    • H03H9/14502
    • Disclosed is a method for fabricating and structure for a broad band surface acoustic wave (SAW) edge deposited transducer (EDT) (10) capable of frequencies in excess of 1 GHz and bandwidths in the hundreds of MHz. The method and apparatus allows fabrication of such a transducer on a semiconductor substrate (12) which is either non-piezoelectric or weakly piezoelectric. The substrate is formed such as to have a sharp, smooth edge (20) formed by the intersection of its top (18) and a side surface (16). A passivation layer (24) is deposited on the side surface of the substrate followed by a starter layer (34) to provide adhesion and nucleation sites. An inner metallic (gold, for example) electrode (26) is then deposited on the starter layer followed by a transducer layer (40) being deposited on the inner metallic electrode. An outer metallic electrode (36) is then deposited on the transducer layer a predetermined distance below the top surface of the substrate. When the transducer is excited, bulk longitudinal waves are generated in the transducer layer which couple to the longitudinal component of the surface wave in the substrate causing the SAW mode to propagate away from the transducer (10).
    • 公开了一种用于制造和构造能够以超过1GHz的频率和数百MHz的带宽的宽带声表面波(SAW)边缘沉积换能器(EDT)(10)的方法。 该方法和装置允许在非压电或弱压电的半导体衬底(12)上制造这种传感器。 基板形成为具有由其顶部(18)和侧表面(16)的交点形成的尖锐的平滑边缘(20)。 钝化层(24)沉积在基板的侧表面上,随后是起始层(34),以提供粘附和成核位置。 然后将内金属(例如金)的电极(26)沉积在起始层上,随后沉积在内金属电极上的换能器层(40)。 然后将外部金属电极(36)沉积在基板的顶表面下方预定距离的换能器层上。 当换能器被激发时,在耦合到衬底中的表面波的纵向分量的换能器层中产生大量长波,导致SAW模式传播离开换能器(10)。