专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1997050159A1 Be-CONTAINING II-VI BLUE-GREEN LASER DIODES 审中-公开
标题翻译：包含II-VI蓝绿色激光二极管
公开(公告)号：WO1997050159A1
公开(公告)日：1997-12-31
申请号：PCT/US1997000612
申请日：1997-01-16
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY , PHILIPS ELECTRONICS N.V.
发明人： MINNESOTA MINING AND MANUFACTURING COMPANY , PHILIPS ELECTRONICS N.V. , MILLER, Thomas, J. , HAASE, Michael, A. , BAUDE, Paul, F. , PASHLEY, Michael, D.
IPC分类号： H01S03/19
CPC分类号： B82Y20/00 , H01S5/327 , H01S5/3409 , H01S5/347 , H01S2304/02
摘要： A II-VI compound semiconductor laser diode (10) includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate (12). The layers formed in the pn junction include a first cladding layer (20) of a first conductivity type, a second cladding layer (22) of a second conductivity type, and at least a first guiding layer (14) between the first and second cladding layers (20, 22). A quantum well active layer (18) is positioned within the pn junction. Electrical energy is coupled to the laser diode (10) by first and second electrodes (40, 41). Various layers (14, 16, 20, 22, 36, 38) in the laser diode are formed using Be.
摘要翻译： II-VI化合物半导体激光二极管（10）包括形成由单晶GaAs半导体衬底（12）支撑的pn结的多个II-VI半导体层。形成在pn结中的层包括第一导电类型的第一包层（20），第二导电类型的第二包层（22）和至少第一和第二包层之间的第一引导层（14）层（20,22）。量子阱活性层（18）位于pn结内。电能通过第一和第二电极（40,41）耦合到激光二极管（10）。使用Be形成激光二极管中的各种层（14,16,20,22,36,38）。

2. 发明申请

WO1997049150A1 AN INTEGRATED OPTICAL DEVICE 审中-公开
标题翻译：一体化光学器件
公开(公告)号：WO1997049150A1
公开(公告)日：1997-12-24
申请号：PCT/US1997009495
申请日：1997-05-30
申请人： BELL COMMUNICATIONS RESEARCH, INC.
发明人： BELL COMMUNICATIONS RESEARCH, INC. , AMERSFOORT, Martin , ZAH, Chung-En
IPC分类号： H01S03/19
CPC分类号： H01S5/026 , G02B6/12004 , G02B2006/12097 , G02B2006/12119 , G02B2006/12176 , H01S5/1028 , H01S5/22 , H01S5/4025
摘要： An opto-electronic integrated circuit including an active ridge waveguide (60), for example, a semiconductor laser diode, and a passive buried heterostructure semiconductor waveguide (64). The two types of waveguides are chosen for their respective tasks so as to minimize the lasing wavelength dependencies arising from fabricational variations and to simultaneously reduce the allowable bending radius, thus reducing the chip size. The two waveguides are coupled by a transition structure (62), including a laterally undefined slab waveguide. A fabricational method is described that self aligns the ridge and buried heterostructure waveguides so that the transition loss is negligible. The method can be integrated with fabrication of a window facet (118', 118'') between an end of the ridge waveguide and the chip edge, which prevents unintended back reflections from the chip edge.
摘要翻译：一种包括有源脊波导（60），例如半导体激光二极管和无源掩埋异质结构半导体波导（64）的光电集成电路。为了各自的任务选择两种类型的波导，以便最小化由制造变化引起的激光波长依赖性并且同时减小允许的弯曲半径，从而减小芯片尺寸。两个波导通过过渡结构（62）耦合，包括横向未定义的平板波导。描述了自对准脊和掩埋异质结构波导的制造方法，使得过渡损耗可以忽略不计。该方法可以与在脊形波导的端部和芯片边缘之间的窗口小面（118'，118“）的制造集成，从而防止来自芯片边缘的意外反射。

3. 发明申请

WO1997015969A2 OPTICAL TRANSMISSION LINK CAPABLE OF HIGH TEMPERATURE OPERATION WITHOUT COOLING WITH AN OPTICAL RECEIVER MODULE HAVING TEMPERATURE INDEPENDENT SENSITIVITY PERFORMANCE AND OPTICAL TRANSMITTER MODULE WITH LASER DIODE SOURCE 审中-公开
标题翻译：具有高温操作的光传输链路，不用具有温度独立灵敏度性能的光接收器模块冷却，具有激光二极管源的光发射模块
公开(公告)号：WO1997015969A2
公开(公告)日：1997-05-01
申请号：PCT/US1996016593
申请日：1996-10-18
申请人： SDL, INC.
发明人： SDL, INC. , NAGARAJAN, Radhakrishnan , MAJOR, Jo., S., Jr.
IPC分类号： H01S03/19
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/068 , H01S5/34306 , H01S5/34313 , H04B10/504 , H04B10/6911 , H04B10/6932
摘要： An optical transmission link has both a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both a semiconductor laser diode source and an optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125 DEG C. Compensation is provided to reduce the effect of photodiode noise and amplifier noise. In addition, temperature compensation can be provided that provides for overall reduction in receiver noise across the bandwidth of the receiver module through maintenance of a temperature environment optimizing receiver performance.
摘要翻译：光传输链路具有在不冷却条件下可操作的发射器模块和接收器模块，即不需要昂贵的冷却设备，例如热电冷却器。光传输系统包括半导体激光二极管源和光接收器模块，其均被设计为在宽的温度范围内在高频（例如，GHz范围）下未经制冷而不经过信号带宽的显着变化而且在超过125 DEG C.提供补偿以减少光电二极管噪声和放大器噪声的影响。此外，可以提供温度补偿，其通过维持优化接收机性能的温度环境来提供整个接收器模块的带宽上的接收机噪声的整体降低。

4. 发明申请

WO1997001204A1 SEMICONDUCTOR OPTICAL AMPLIFYING MEDIA WITH REDUCED SELF-FOCUSING 审中-公开
标题翻译：具有减少自聚焦的半导体光学放大介质
公开(公告)号：WO1997001204A1
公开(公告)日：1997-01-09
申请号：PCT/US1996010747
申请日：1996-06-19
申请人： SDL, INC.
发明人： SDL, INC. , LANG, Robert, J. , OSINSKI, Julian, S. , WELCH, David, F.
IPC分类号： H01S03/19
CPC分类号： H01S5/10 , H01S5/0618 , H01S5/1057 , H01S5/20 , H01S5/50
摘要： A semiconductor light amplifying medium (11; 23) has reduced self-focusing and optical filamentation for providing higher power coherent outputs in broad-area laser and amplifier devices (Figs. 1 and 2). In one embodiment, a longitudinally inhomogeneous active region (13; 25) has alternating segments of first gain portions (15; 27) and second compensating portions (17; 29). The compensating portions have a negative self-focusing parameter [ DIFFERENTIAL n/ DIFFERENTIAL P] (Figs. 3 and 10) and may be light absorbing (negative gain) regions with negative antiguiding factor alpha (Figs. 4A-4C and 5) or light amplifying (positive gain) regions with positive antiguiding factor alpha (Figs. 6A-6B and 7A-7B). The alpha -parameter is defined as the ratio of refractive index change per change in gain, as a function of carrier density. In a second embodiment, the medium may have longitudinally varying peak filament period [Kpk] so that filaments beginning to form in one portion of the active region are subsequently dispersed in a succeeding portion, slowing filament growth. In addition to self-focusing compensation, media with a lower alpha -parameter are provided by increasing the barrier height in quantum well active regions (Figs. 8A-8B), straining (Fig. 9) or p-doping the active region, or a combination of these methods.
摘要翻译：半导体光放大介质（11; 23）具有减少的自聚焦和光纤丝化，用于在广域激光和放大器装置中提供更高功率的相干输出（图1和图2）。在一个实施例中，纵向非均匀有源区（13; 25）具有第一增益部分（15; 27）和第二补偿部分（17; 29）的交替段。补偿部分具有负的自聚焦参数[差分n /差分P]（图3和图10），并且可以是具有负抗原因子α（图4A-4C和5）或光的吸光（负增益）区域具有正抗原因子α的放大（正增益）区域（图6A-6B和7A-7B）。 α参数定义为每增益变化的折射率变化率，作为载流子密度的函数。在第二个实施方案中，介质可以具有纵向变化的峰长丝周期[Kpk]，使得开始在有源区域的一部分中形成的长丝随后分散在随后的部分中，从而减慢长丝生长。除了自聚焦补偿之外，通过增加量子阱活性区域（图8A-8B）中的势垒高度，应变（图9）或p掺杂有源区域来提供具有较低α参数的介质，或这些方法的组合。

5. 发明申请

WO1996010282A1 OPTICAL FIBRE WITH QUANTUM DOTS 审中-公开
标题翻译：光纤与光源
公开(公告)号：WO1996010282A1
公开(公告)日：1996-04-04
申请号：PCT/GB1995002322
申请日：1995-09-29
申请人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , BURT, Michael, Graham
发明人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY
IPC分类号： H01S03/19
CPC分类号： G02B6/032 , B82Y10/00 , B82Y20/00 , C03C13/04 , C03C13/046 , C03C14/006 , G02B6/0229 , G02B6/02385 , G02B6/1225 , G02F1/365 , G02F2001/01791 , H01S3/06708 , H01S3/169 , H01S5/30 , H01S5/3412 , Y10S977/773 , Y10S977/774 , Y10S977/815 , Y10S977/824 , Y10S977/888
摘要： An optical fibre comprises a tubular glass cladding (1) with a central opening (2), filled with a colloidal solution of quantum dots (4) in a support medium (3). The quantum dots may be caused to produce luminescence in response to input optical radiation, for example to produce optical amplification or laser radiation. A waveguide with an active medium comprising colloidal quantum dots is claimed.
摘要翻译：光纤包括具有中心开口（2）的管状玻璃包层（1），其在支撑介质（3）中填充有量子点（4）的胶体溶液。可以使量子点响应于输入光辐射产生发光，例如产生光放大或激光辐射。要求具有包含胶体量子点的活性介质的波导。

6. 发明申请

WO1994018730A1 BURIED-RIDGE II-VI LASER DIODE AND METHOD OF FABRICATION 审中-公开
标题翻译： BIRIED-RIDGE II-VI激光二极管及其制造方法
公开(公告)号：WO1994018730A1
公开(公告)日：1994-08-18
申请号：PCT/US1994001104
申请日：1994-01-18
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： MINNESOTA MINING AND MANUFACTURING COMPANY , HAASE, Michael, A. , QIU, Jun , CHENG, Hwa , DePUYDT, James, M.
IPC分类号： H01S03/19
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/45 , H01L33/0087 , H01L33/145 , H01L33/28 , H01L33/285 , H01L33/38 , H01L2933/0016 , H01S5/0421 , H01S5/2211 , H01S5/2231 , H01S5/3059 , H01S5/3068 , H01S5/327 , H01S5/3403 , H01S5/347
摘要： A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
摘要翻译：埋脊或掩埋异质结II-VI激光二极管。通过真空蒸发沉积的诸如ZnS，ZnSSe，ZnSe或CdS的多晶II-VI半导体掩埋蚀刻的脊。

7. 发明申请

WO1993002495A1 METHOD OF FABRICATION LASERS 审中-公开
标题翻译：制造激光的方法
公开(公告)号：WO1993002495A1
公开(公告)日：1993-02-04
申请号：PCT/US1992006104
申请日：1992-07-22
申请人： GTE LABORATORIES INCORPORATED
发明人： GTE LABORATORIES INCORPORATED , ELMAN, Boris, S. , SHARFIN, Wayne, F.
IPC分类号： H01S03/19
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32308
摘要： A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer (14) on the heterostructure, disposing epitaxial layers on the etch stop layer (14), and etching the heterostructure to form the laser whereby the etch stop layer (14) prevents further etching into said heterostructure.

8. 发明申请

WO1991016747A1 HIGH POWER LASER DIODE 审中-公开
标题翻译：高功率激光二极管
公开(公告)号：WO1991016747A1
公开(公告)日：1991-10-31
申请号：PCT/RO1991000002
申请日：1991-04-04
申请人： INSTITUTUL DE FIZICA ATOMICA , PETRESCU-PRAHOVA, Iulian, Basarab , LAZANU, Sorina
发明人： INSTITUTUL DE FIZICA ATOMICA
IPC分类号： H01S03/19
CPC分类号： H01S5/20 , H01S5/1039 , H01S5/2004 , H01S5/2031 , H01S5/305 , H01S5/3213
摘要： High power laser diode consisting of a limiting, a main, an intermediate, an active, and an excitation region, which has a confining factor comprised between 1.5*10 and 1.5*10 and a resonator length comprised between 1.5 and 3 cm, wherein, due to a small refractive index difference between the main and limitation regions, only the fundamental transverse mode, which has the maximum of the flux density situated in the main region, can propagate.
摘要翻译：由限制，主要，中间，有源和激发区组成的大功率激光二极管，其具有包含在1.5×10 -4和1.5×10 -3之间的约束因子，并且包括谐振器长度在1.5和3cm之间，其中，由于主区域和限制区域之间的折射率差小，只有位于主区域中的具有最大磁通密度的基本横向模式才能传播。

9. 发明申请

WO1985005504A1 METHOD OF MAKING HETEROEPITAXIAL RIDGE OVERGROWN LASER 审中-公开
标题翻译：制造异形拉丁光束激光的方法
公开(公告)号：WO1985005504A1
公开(公告)日：1985-12-05
申请号：PCT/US1985000744
申请日：1985-04-22
申请人： AMERICAN TELEPHONE & TELEGRAPH COMPANY
发明人： AMERICAN TELEPHONE & TELEGRAPH COMPANY , LOGAN, Ralph, Andre , TSANG, Won-Tien
IPC分类号： H01S03/19
CPC分类号： H01S5/22 , H01S5/1237 , H01S5/223 , H01S5/327
摘要： Method of making a ridge waveguide laser with the ridge (11) being grown through a stripe opened in a dielectric, e.g. an oxide, layer (9) covering one of the cladding layers (7). In one embodiment, the cladding layer is corrugated (17) and the ridge waveguide laser is a distributed feedback laser.
摘要翻译：制造具有脊（11）的脊形波导激光器的方法通过在电介质中打开的条纹生长，例如，覆盖覆盖层（7）中的一个的氧化物层（9）。在一个实施例中，包覆层是波纹状的（17），并且脊形波导激光器是分布式反馈激光器。

10. 发明申请

WO1997017750A1 SEMICONDUCTOR DIODE LASER, IN PARTICULAR A LASER AMPLIFIER, AND METHOD OF MANUFACTURING THIS LASER 审中-公开
标题翻译：半导体二极管激光器，特别是激光放大器及其制造方法
公开(公告)号：WO1997017750A1
公开(公告)日：1997-05-15
申请号：PCT/IB1996001152
申请日：1996-10-25
申请人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB
发明人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB , TIEMEIJER, Lukas, Frederik , BINSMA, Johannes, Jordanus, Maria , THIJS, Petrus, Johannes, Adrianus
IPC分类号： H01S03/19
CPC分类号： H01S5/10 , H01S5/1064 , H01S5/1085 , H01S5/50
摘要： The invention relates to a III-V laser (amplifier) with an active region (4A) which encloses a small angle with the end faces (50, 51), is separated therefrom by a preferably current-blocking cladding layer (5) and has a tapering end (40) of which a first side face (42) coincides with a side face (42) of the remainder of the strip-shaped active region (4A), while a second side face (43) thereof encloses an acute angle with the perpendicular to the end faces (50, 51). Such a laser has an amplification ripple, which is undesirable. In a laser according to the invention, the second side face (43) of the tapering portion (40) encloses an angle with the perpendicular to the end face (50, 51) which lies between 0 and 30 DEG , preferably between 0 and 10 DEG , and which is preferably approximately 0 DEG . The laser according to the invention has a particularly low reflection, as a result of which said amplification ripple is absent or at least very small. No differences in growing processes against said side faces occur since both the first and the second side faces (42, 43) of the active region (4A) are mutually substantially parallel. Accordingly, the laser is preferably of the buried hetero type. In that case, the growth around the active region (4A) is very homogeneous, which benefits the yield and quality of the lasers. The laser is preferably constructed as an amplifier, for which purpose the end faces (50, 51) are provided with an anti-reflection layer. The invention, finally, also relates to a method by which the desired laser is obtained in a simple manner.
摘要翻译：本发明涉及具有与端面（50,51）成小角度的有源区域（4A）的III-V激光器（放大器），其通过优选的阻流覆层（5）与其隔开，并具有一个锥形端部（40），其第一侧面（42）与条状有源区域（4A）的其余部分的侧面（42）重合，而其第二侧面（43）包围锐角垂直于端面（50,51）。这种激光器具有放大纹波，这是不期望的。在根据本发明的激光器中，锥形部分（40）的第二侧面（43）与垂直于端面（50,51）的角度包围在0和30度之间，优选在0和10之间 DEG，优选为约0℃。根据本发明的激光器具有特别低的反射，其结果是所述放大纹波不存在或至少非常小。由于活性区域（4A）的第一和第二侧面（42,43）彼此基本平行，因此不会发生生长过程与所述侧面的差异。因此，激光器优选为埋入异种型。在这种情况下，活性区域（4A）周围的生长是非常均匀的，这有利于激光器的产量和质量。激光器优选地构造为放大器，为此目的，端面（50,51）设置有抗反射层。本发明最终还涉及以简单的方式获得所需激光的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式