专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

NO308388B1 未知
公开(公告)号：NO308388B1
公开(公告)日：2000-09-04
申请号：NO990421
申请日：1999-01-28
申请人： THIN FILM ELECTRONICS ASA
发明人： NORDAL PER-ERIK , LEISTAD GEIRR I , GUDESEN HANS GUDE
IPC分类号： H01L20060101 , H01L21/02 , H01L21/26 , H01L27/04 , H01L31/0256 , H01L51/40 , H01L31/256

2. 发明授权

US07105932B2 Power semiconductor module 失效
标题翻译：功率半导体模块
公开(公告)号：US07105932B2
公开(公告)日：2006-09-12
申请号：US10870061
申请日：2004-06-18
申请人： Kazuya Kodani , Nobuhiro Shingai
发明人： Kazuya Kodani , Nobuhiro Shingai
IPC分类号： H01L29/15 , H01L31/256
CPC分类号： H01L24/06 , H01L23/049 , H01L23/42 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48472 , H01L2224/48724 , H01L2224/4903 , H01L2224/49051 , H01L2224/49113 , H01L2224/49175 , H01L2224/4943 , H01L2224/85205 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01033 , H01L2924/01042 , H01L2924/01043 , H01L2924/01052 , H01L2924/01074 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/2076 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A power semiconductor module comprises a wide band gap semiconductor chip having its surface with an electrode provided thereon, and more than one bonding wire which is connected to an edge portion of the electrode directly or indirectly via an electrode pad. The electrode and the electrode pad have their thickness values that are specifically set in such a way as to obtain a conduction area ratio equal to or greater than a conduction area ratio of the wide band gap semiconductor chip in the case where a respective one of the electrode and electrode pad is made of aluminum while letting a total thickness value of the electrode and the electrode pad measure ten micrometers (10 μm).
摘要翻译：功率半导体模块包括具有设置在其上的电极的表面的宽带隙半导体芯片，以及多个通过电极焊盘直接或间接连接到电极的边缘部分的接合线。电极和电极焊盘的厚度值具体设定为使得在宽带隙半导体芯片的导通面积比等于或大于导通面积比的情况下，电极和电极焊盘由铝制成，同时使电极和电极焊盘的总厚度测量为十微米（10um）。

3. 发明授权

US07592629B2 Gallium nitride thin film on sapphire substrate having reduced bending deformation 失效
标题翻译：蓝宝石衬底上的氮化镓薄膜具有减小的弯曲变形
公开(公告)号：US07592629B2
公开(公告)日：2009-09-22
申请号：US11544006
申请日：2006-10-06
申请人： Chang Ho Lee , Sun Hwan Kong
发明人： Chang Ho Lee , Sun Hwan Kong
IPC分类号： H01L31/12 , H01L31/256
CPC分类号： C30B25/18 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L33/007
摘要： A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown thereon by secondary nitradation. The gallium nitride thin film on sapphire substrate comprises an etching trench structure formed on a sapphire substrate, wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies Equation 1 below, and corresponds to or is located above a function graph drawn when Y0 is 6.23±1.15, A is 70.04 ±1.92, and T is 1.59±0.12: Y=Y0+A·e−(X−1)/T, [Equation 1] where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y0, A, and T are positive numbers.
摘要翻译：减少弯曲变形的蓝宝石衬底上的氮化镓薄膜及其制造方法。通过初步氮化和HCl处理在蓝宝石衬底上形成蚀刻沟槽结构，并通过二次氮化在其上生长氮化镓膜。蓝宝石衬底上的氮化镓薄膜包括形成在蓝宝石衬底上的蚀刻沟槽结构，其中根据氮化镓膜的厚度X的曲率半径Y的函数图满足下面的等式1，并且对应于或位于上面当Y0为6.23±1.15时，A为70.04±1.92，T为1.59±0.12：<？在线公式描述=“在线公式”end =“lead”？> Y = Y0 + Ae-（X-1）/ T，[等式1] <？in-line-formula description =“In-line formula”end =“tail”？>其中Y是曲率半径m，X是氮化镓膜，Y0，A，T为正数。

4. 发明授权

US6147364A Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan 失效
标题翻译：化合物半导体器件由含氮镓化合物如甘油，甘氨酸或者甘氨酸形成
公开(公告)号：US6147364A
公开(公告)日：2000-11-14
申请号：US196221
申请日：1998-11-20
申请人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
发明人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01L31/256
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/325 , H01S5/305 , H01S5/32341 , H01S5/343 , H01S5/0422 , H01S5/3063 , H01S5/3201 , H01S5/34333
摘要： A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x) N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.bg1, N is equal to an Mg background level in additive-free Ga.sub.1-x Al.sub.x N.
摘要翻译：基于氮化镓（GaN）的半导体器件包括基板，主要由Mg（Mg）浓度为Nbg1cm-3的GaN组成的单晶层，单晶层设置在基板附近并具有厚度以及主要由Al组分x为至少0.02且不高于1且厚度为d2μm的Ga1-xAlxN组成的半导体层。单晶层位于基板和半导体层之间，并以NMg cm-3的浓度将Mg添加到半导体层。 Al组分x，浓度NMg，浓度Nbg1，厚度d1和厚度d2具有以下关系式1 /（1600xx） Nbg1，N cm-3 = NMg-Nbg1，当NMg = Nbg1时，N等于添加剂Ga1-xAlxN中的Mg背景水平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式