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1. 发明授权

US06518872B1 High resolution scanning thermal probe and method of manufacturing thereof 失效
标题翻译：高分辨率扫描热探针及其制造方法
公开(公告)号：US06518872B1
公开(公告)日：2003-02-11
申请号：US09951620
申请日：2001-09-14
申请人： Klaus Edinger , Ivaylo Rangelow
发明人： Klaus Edinger , Ivaylo Rangelow
IPC分类号： H01L304
CPC分类号： G01Q60/58 , Y10S977/867 , Y10S977/873
摘要： A resistant based thermal probe including a nanometer sized four-leg filament integrated with a piezoresistive AFM type cantilever is created by depositing the filament structure onto the cantilever by a chemical vapor deposition technique where the cantilever is exposed to the flux of precursor gas. An incident electron beam causes a fragmentation of the gas molecules leaving a deposit behind which leads to a conductive deposit shaped as a multi-leg filament structure for thermal measurements of a sample. A deposited four leg filament structure has a mechanical rigidity, high spatial resolution, low thermal conductivity and thermal capacitance, fast response time, and in combination with a four point resistant measurement and lock-in technique, eliminates resistivity for increasing both the temperature sensitivity and the signal-to-noise ratio of the thermal probe.
摘要翻译：通过使用化学气相沉积技术将悬臂梁暴露于前体气体的通量的化学气相沉积技术，将长丝结构沉积到悬臂上，形成包括与压阻AFM型悬臂结合的纳米尺寸的四条腿细丝的基于电阻的热探针。入射的电子束导致气体分子的断裂，留下沉积物，导致沉积物形成为多腿细丝结构的导电沉积物，用于样品的热测量。沉积的四腿细丝结构具有机械刚性，高空间分辨率，低热导率和热电容，响应时间快，并结合四点电阻测量和锁定技术，消除了电阻率，提高温度灵敏度和热探头的信噪比。

2. 发明授权

US06762671B2 Temperature sensor and method of making and using the same 失效
标题翻译：温度传感器及其制作及使用方法
公开(公告)号：US06762671B2
公开(公告)日：2004-07-13
申请号：US10280168
申请日：2002-10-25
申请人： Charles Scott Nelson
发明人： Charles Scott Nelson
IPC分类号： H01L304
CPC分类号： G01K13/02 , G01K7/223 , H01C17/02
摘要： Provided for herein is a temperature sensor and methods of making and using the same. In one embodiment, the temperature sensor comprises: a cover plate disposed at a first end of a substrate to form an interface portion; a sensing element disposed between the cover plate and the substrate to form an assembly; wherein the cover plate and substrate have relative dimensions so as to form a ledge at the first end; and wherein the cover plate is attached to the substrate at the ledge. In anther embodiment, the temperature sensor comprises: a cover plate disposed at a first end of a substrate to form an interface portion, a sensing element disposed between the cover plate and the substrate to form an assembly, and a seal disposed to inhibit fluid communication between the sensing element a gas to be temperature sensed, wherein fluid communication is retained between the sensing element and an external environment.
摘要翻译：这里提供的是温度传感器及其制造和使用方法。在一个实施例中，温度传感器包括：盖板，设置在基板的第一端以形成界面部分; 设置在所述盖板和所述基板之间以形成组件的感测元件; 其中所述盖板和基板具有相对尺寸以便在所述第一端处形成凸缘; 并且其中所述盖板在所述凸缘处附接到所述基板。在另一实施例中，所述温度传感器包括：盖板，设置在基板的第一端部以形成界面部分;感测元件，设置在所述盖板和衬底以形成组件，以及密封件，其设置成阻止感测元件之间流体连通待感测的气体，其中在感测元件和外部环境之间保持流体连通。

3. 发明授权

US06184773B2 Rugged fluid flow and property microsensor 失效
标题翻译：坚固的流体流动和性能微传感器
公开(公告)号：US06184773B2
公开(公告)日：2001-02-06
申请号：US09207165
申请日：1998-12-07
申请人： Ulrich Bonne , Aravind Padmanabhan
发明人： Ulrich Bonne , Aravind Padmanabhan
IPC分类号： H01L304
CPC分类号： G01F1/6845
摘要： A thermal fluid flow or property sensor having no exposed contact wires or contact pads in the fluid flow path to obstruct measurements, flat fully passivated sensor surfaces and high corrosion resistance is implemented over a honeycombed thermal isolation chamber.
摘要翻译：在流体流动路径中没有暴露的接触线或接触垫以阻塞测量，平坦完全钝化的传感器表面和高耐腐蚀性的热流体流动或性质传感器在蜂窝式热隔离室上实现。

4. 发明授权

US06292089B1 Structures for temperature sensors and infrared detectors 失效
标题翻译：温度传感器和红外探测器的结构
公开(公告)号：US06292089B1
公开(公告)日：2001-09-18
申请号：US09101597
申请日：1998-07-10
申请人： Jan Andersson
发明人： Jan Andersson
IPC分类号： H01L304
CPC分类号： H01L27/16 , G01J5/20 , G01K7/01 , G01K7/22
摘要： A structure for temperature sensors and infrared detectors. The structure is built-up on a substrate that includes a thermistor layer, wherein the resistance of the thermistor layer is temperature dependent. The substrate also includes an electric contact layer on both sides of the thermistor layer, and the resistance of the thermistor layer is measured between the contact layers. The thermistor layer includes a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers. One or more of the bandedge energy of the barrier layers, the quantum well layer doping level, the quantum well layer thickness, and the barrier layer thickness is adapted to obtain a temperature coefficient predetermined for the structure.
摘要翻译：温度传感器和红外探测器的结构。该结构被构建在包括热敏电阻层的基板上，其中热敏电阻层的电阻是温度依赖性的。基板还包括在热敏电阻层的两侧的电接触层，并且在接触层之间测量热敏电阻层的电阻。热敏电阻层包括单晶量子阱结构，其包括交替的量子阱层和势垒层。阻挡层的带状能量，量子阱层掺杂水平，量子阱层厚度和阻挡层厚度中的一个或多个适于获得为该结构预定的温度系数。

5. 发明授权

US06689951B2 Photovoltaic element and process for the production thereof 有权
标题翻译：光伏元件及其制造方法
公开(公告)号：US06689951B2
公开(公告)日：2004-02-10
申请号：US10144719
申请日：2002-05-15
申请人： Koichi Shimizu , Tsutomu Murakami , Koji Tsuzuki
发明人： Koichi Shimizu , Tsutomu Murakami , Koji Tsuzuki
IPC分类号： H01L304
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A photovoltaic element having an electrode structure having joining portions (A) in which collecting electrodes are spacedly arranged on a light receiving face side of the photovoltaic element such that they are individually joined to a bus bar electrode. Each of the joining portions (A) has a first joining portion (i) having a first paste. Each of collecting electrodes (b) excluding the collecting electrodes (a) positioned at opposite end sides of the arrangement of the collecting electrodes further has a second joining portion (ii) having a second paste with a smaller resistivity than that of the first paste. A proportion of the first joining portion (i) in the joining portion (A) of each of the collecting electrodes (a) is greater than a proportion of the first joining portion (i) in the joining portion (A) of each of the collecting electrodes (b). A process for the production of the photovoltaic element.
摘要翻译：一种具有电极结构的光电元件，具有接合部分（A），其中收集电极间隔地设置在光电元件的光接收面侧，使得它们分别接合到母线电极。每个接合部分（A）具有具有第一浆料的第一接合部分（i）。除了位于集电电极的配置的相对端侧的集电极（a）之外的每个集电极（b）还具有第二接合部分（ii），其具有比第一浆料的电阻率小的第二焊膏。每个集电电极（a）的接合部分（A）中的第一接合部分（i）的比例大于第一接合部分（i）在接合部分（A）中的比例收集电极（b）。一种用于生产光伏元件的方法。

6. 发明授权

US06437681B1 Structure and fabrication process for an improved high temperature sensor 有权
标题翻译：改进的高温传感器的结构和制造工艺
公开(公告)号：US06437681B1
公开(公告)日：2002-08-20
申请号：US09698695
申请日：2000-10-27
申请人： Chung Hsiung Wang , Al Salman , Yue-Lang Chen
发明人： Chung Hsiung Wang , Al Salman , Yue-Lang Chen
IPC分类号： H01L304
CPC分类号： H01C17/24 , G01K7/183 , H01C1/028 , H01C7/008
摘要： The present invention discloses a temperature sensor. The temperature sensor includes an aluminum oxide substrate and a thin-film resistor having a specific temperature coefficient of resistance (TCR) disposed over the substrate. The temperature sensor further includes an aluminum oxide stress-relief layer covering the thin film resistor. The temperature sensor further includes a passivation layer covering the aluminum oxide stress-relief layer. The aluminum oxide stress-relief layer further has at least one resistor-trimming trench formed by removing a portion of the aluminum oxide stress-relief layer and thin-film resistor therefrom and the resistor-trimming trench is filled with a material of the passivation layer. In a preferred embodiment, the temperature sensor further includes a set of dummy pads for resistance-trimming measurement disconnected from the thin film resistor disposed on the substrate near the thin film resistor covered by the passivation layer. In another preferred embodiment, the temperature sensor further includes a set of sensor bonding pads disposed on the substrate electrically connected to the thin film resistor covered by the passivation layer. And, the temperature sensor further includes a set of platinum chip-leads bonded to the sensor bonding pads for temperature measurement connections.
摘要翻译：本发明公开了一种温度传感器。温度传感器包括氧化铝衬底和设置在衬底上的具有特定温度系数（TCR）的薄膜电阻器。温度传感器还包括覆盖薄膜电阻器的氧化铝应力消除层。温度传感器还包括覆盖氧化铝应力消除层的钝化层。氧化铝应力消除层还具有通过从其中去除一部分氧化铝应力消除层和薄膜电阻而形成的至少一个电阻器修整沟槽，并且电阻器修整沟槽填充有钝化层的材料。在优选实施例中，温度传感器还包括用于电阻修整测量的一组虚拟焊盘，与设置在由钝化层覆盖的薄膜电阻器附近的衬底上的薄膜电阻器断开。在另一个优选实施例中，温度传感器还包括一组传感器接合焊盘，其设置在与由钝化层覆盖的薄膜电阻器电连接的衬底上。而且，温度传感器还包括一组铂芯片引线，其结合到用于温度测量连接的传感器接合焊盘。

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