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1. 发明专利

JPS4827509B1 失效
公开(公告)号：JPS4827509B1
公开(公告)日：1973-08-23
申请号：JP8517270
申请日：1970-09-30
IPC分类号： H01F1/40 , H01L29/82 , H01L43/00 , H01L3/16

2. 发明专利

JPS4847291A 失效
公开(公告)号：JPS4847291A
公开(公告)日：1973-07-05
申请号：JP10121872
申请日：1972-10-11
IPC分类号： H01K20060101 , H01L31/12 , H01L41/00 , H01L41/20 , H01L3/16

3. 发明授权

US3491026A Ferromagnetic-semiconductor composition 失效
标题翻译：氟化物半导体组合物
公开(公告)号：US3491026A
公开(公告)日：1970-01-20
申请号：US3491026D
申请日：1967-06-06
申请人： RCA CORP
发明人： LEHMANN HANS W , ROBBINS MORRAY
IPC分类号： C22C28/00 , H01F1/40 , H01L21/00 , H01L3/16 , C01B19/00 , C04B35/00
CPC分类号： H01F1/40 , C22C28/00 , H01L21/00

4. 发明授权

US5721387A Method of inspecting incomplete terminal insertion and inspecting device therefore 失效
标题翻译：因此，检查不完整的端子插入和检查装置的方法
公开(公告)号：US5721387A
公开(公告)日：1998-02-24
申请号：US661541
申请日：1996-06-11
申请人： Tomio Watanabe , Toru Nagano , Takayoshi Endo
发明人： Tomio Watanabe , Toru Nagano , Takayoshi Endo
IPC分类号： H01R43/20 , H01R13/436 , H01L3/16
CPC分类号： H01R13/4367
摘要： At the time of continuity inspection of metallic terminal parts of a connector, there is provided a connector inspecting device which is capable Of detecting whether or not there is a correcting operation to the incompletely inserted terminal of this connector comprising a connector supporting body, an inspecting device body which is disconnectable with the connector supporting body, and a switch element of a correcting operation detecting circuit provided for the connector supporting body, wherein the switch element is pushed by the free end section of the resilient piece of a connector to be inspected.
摘要翻译：在对连接器的金属端子部分进行连续性检查时，提供一种连接器检查装置，其能够检测是否存在对该连接器的不完全插入的端子的校正操作，该连接器包括连接器支撑体，检查装置主体，其与连接器支撑体可断开;以及校正操作检测电路的开关元件，用于连接器支撑体，其中开关元件被待检查的连接器的弹性片的自由端部分推动。

5. 发明授权

US3820150A Temperature insensitive doped amorphous thin film switching and memory device 失效
标题翻译：温度敏感的非晶薄膜切换和存储器件
公开(公告)号：US3820150A
公开(公告)日：1974-06-25
申请号：US27699772
申请日：1972-08-01
申请人： US ARMY
发明人： NICOLAIDES R
IPC分类号： H01L45/00 , H01L3/16 , H01C7/10
CPC分类号： H01L45/04 , H01L27/2472 , H01L45/1226 , H01L45/1233 , H01L45/141
摘要： This invention relates to a semi-conductor switching and memory device having a threshold or breakdown voltage which is relatively insensitive to environmental temperatures which range from approximately -35* to 130*C. and nuclear radiation after exposure to 1.3 X 1017 n/cm. In addition to the temperature insensitivity and radiation hardness characteristics of the present invention, the device exhibits a symmetrical positive and negative voltage limiting or voltage regulating phenomena in its ''''off'''' state current-voltage characteristic and also exhibits in its memory mode a very short setting and resetting time. The present device has a doped chalcogenide amorphous thin film material positioned adjacent two electrodes. The semi-conductor is deposited on an insulating substrate which is fixedly held in a sealed, nitrogen containing ''''flat pack'''' type ceramic container. The electrodes of the semi-conductor are electrically coupled to hermetically sealed electrical terminal feed-throughs of a container.

6. 发明授权

US3818328A Ferromagnetic heterojunction diode 失效
标题翻译：反相异构二极管
公开(公告)号：US3818328A
公开(公告)日：1974-06-18
申请号：US27715872
申请日：1972-08-02
申请人： SIEMENS AG
发明人： ZINN W
IPC分类号： H01L29/00 , H01L29/82 , H01L3/16 , H01L9/10
CPC分类号： H01L29/82 , H01L29/00
摘要： A magnetically controllable electronic diode formed of a pair of electrodes spaced apart from one another by a layer of a ferromagnetic semiconductor material in contact with one of the electrodes and a layer of a ferromagnetic or metamagnetic electrical insulator material in contact with the other electrode and with the layer of ferromagnetic semiconductor material. The ferromagnetic and metamagnetic materials are composed of transition element chalcogenides, preferably rare earth chalcogenides such as europium sulfide or selenide, binary chromium thiospinel and binary chromium halogen spinel chalcogenides of the general formula: A Cr2 X3 Z wherein A is selected from the group of Cu, Cd, Eu, Fe, Hg, Zn and mixtures thereof; X is selected from the group S, Se, Te and mixtures thereof; and Z is selected from the group Br, Cr, I and mixtures thereof. The impedance characteristics of the diode are readily controlled by select application of an external magnetic field controlled in its direction and amplitude so that the diode has wide utility as an electronic circuit component, such as a magnetically controllable electronic switch means, or as a detector means for the direction and strength of magnetic fields.
摘要翻译：由一对电极形成的可控电子二极管，该对电极通过与电极中的一个接触的铁磁半导体材料层和与另一个电极接触的铁磁或电磁绝缘材料层彼此间隔开，并与铁磁半导体材料层。铁磁和偏磁材料由过渡元素硫族化物，优选稀土硫族化物如硫化铕或硒化物，二元铬硫堇螺母和二元铬卤素尖晶石硫族化物组成，其通式为：其中A选自Cu ，Cd，Eu，Fe，Hg，Zn及其混合物; X选自S，Se，Te族及其混合物; Z选自Br，Cr，I族及其混合物。通过选择施加在其方向和振幅上控制的外部磁场容易地控制二极管的阻抗特性，使得二极管作为诸如磁性可控电子开关装置的电子电路部件具有广泛的用途，或者作为检测器装置用于磁场的方向和强度。

7. 发明授权

US3765956A Solid-state device 失效
标题翻译：固态装置
公开(公告)号：US3765956A
公开(公告)日：1973-10-16
申请号：US3765956D
申请日：1971-10-19
申请人： LI C
发明人： LI C
IPC分类号： C30B21/02 , C30B21/04 , H01L21/763 , H01L21/764 , H01L27/00 , H01L27/144 , H01L29/06 , H01L31/00 , H01L33/00 , H01L3/16
CPC分类号： H01L31/00 , C30B21/02 , C30B21/04 , H01L21/763 , H01L21/764 , H01L27/00 , H01L27/1446 , H01L29/0657 , H01L29/0661 , H01L33/00 , Y10S438/929
摘要： The ultra-miniaturized, active solid-state devices and circuitries have unique material bodies having signal-translating regions attached thereto for active signal translation. These regions, comprising melt-grown, or simulated melt-grown, metallurgical compounds including oxides, eutectics, and intermetallics, are of controlled compositions, concentration profiles, and electronic or other optoelectromagnetic properties. In some devices, the microstructure of the compounds comprises a plurality of microscopically thin, regularly-shaped and uniformly-spaced bodies of one phase material dispersed in a matrix of another phase material. The electronic conductivities of the bodies are substantially different from that of the matrix, and the bodies all terminate at microscopic distance from the pn junction (or other interfacial rectifying barrier region), so as to confine the signal current carriers to flow mainly in only one of the phases. This achieves carriers microstreaming or microbranching effects. Described also herein are different devices including micron-size eutectic devices, dendritic devices, cellular devices, and granular devices; and their methods of manufacture. The barrier regions may be further modified by diffusion, ion implantation, selective oxidation, electrolytic etching, and surface-contouring. In addition, selected circuit elements may be embedded into these devices to achieve additional carriers movement control or to obtain special beneficial effects.
摘要翻译：超小型化的有源固体器件和电路具有独特的材料体，其具有连接到其上的信号转换区域用于主动信号转换。包括熔融生长或模拟熔融生长的包括氧化物，共晶体和金属间化合物的冶金化合物的这些区域具有受控的组成，浓度分布和电子或其它光电性能。在一些装置中，化合物的微观结构包括分散在另一相材料的基质中的多相微细的，规则形状的和均匀分布的一相材料体。机体的电子电导率与基体的电子电导率基本不同，并且机体全部以距离pn结（或其他界面整流屏障区域）的微观距离终止，以便将信号电流载流子限制在主要仅在一个的阶段。这实现了载体微流化或微分支效应。本文还描述了包括微米级共晶器件，树枝状器件，蜂窝器件和粒状器件的不同器件; 及其制造方法。可以通过扩散，离子注入，选择性氧化，电解蚀刻和表面轮廓进一步修饰阻挡区域。此外，所选择的电路元件可以被嵌入到这些装置中以实现附加的载波运动控制或获得特殊的有益效果。

8. 发明授权

US3642528A Semiconductor device and method of making same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US3642528A
公开(公告)日：1972-02-15
申请号：US3642528D
申请日：1969-05-27
申请人： MATSUSHITA ELECTRONICS CORP
发明人： KIMURA AKIHIRO
IPC分类号： B01D3/00 , H01L21/00 , H01L21/24 , H01L21/28 , H01L21/283 , H01L29/00 , H01L29/06 , H01L29/40 , H01L3/16
CPC分类号： H01L24/05 , B01D3/00 , H01L21/00 , H01L21/24 , H01L21/28 , H01L21/283 , H01L24/03 , H01L24/45 , H01L24/48 , H01L29/00 , H01L29/06 , H01L29/40 , H01L2224/0347 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05164 , H01L2224/05558 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/85424 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01039 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , Y10T428/24851 , Y10T428/24917 , H01L2924/00014 , H01L2924/00 , H01L2924/20753
摘要： A palladium film deposited on a silicon oxide layer peels off when subjected to a gas containing hydrogen. A palladium film of a predetermined shape can be formed on a semiconductor body by forming a silicon oxide film on the body, making a contact window of desired shape in the oxide film to expose the semiconductor body, then depositing palladium on the body and the oxide film and then subjecting the assembly to a gas containing hydrogen thereby to peel off that part of the palladium film which is on the silicon oxide film leaving the palladium film which is on the contact window.
摘要翻译：沉积在氧化硅层上的钯膜在经受含氢气体时剥离。通过在体上形成氧化硅膜，可以在半导体本体上形成预定形状的钯膜，在氧化膜中形成所需形状的接触窗，露出半导体本体，然后在体上沉积钯和氧化物然后对组件进行包含氢气的气体，从而剥离离开在接触窗口上的钯膜的氧化硅膜上的那部分钯膜。

9. 发明授权

US3796926A Bistable resistance device which does not require forming 失效
标题翻译：不需要形成的耐电流装置
公开(公告)号：US3796926A
公开(公告)日：1974-03-12
申请号：US3796926D
申请日：1971-03-29
申请人： IBM
发明人： LAIBOWITZ R , PARK K , COLE J , CUOMO J
IPC分类号： H01L21/00 , H01L45/00 , H01L3/16
CPC分类号： H01L21/00 , H01L27/2409 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1633
摘要： A switchable device using a doped insulator having two stable resistance states which does not require application of a forming voltage when being fabricated. The insulator is, for example, a multivalent oxide of 100-2,500 A thickness, containing impurities which provide conduction centers. Examples of these impurites include Bi, Sb, As, P, Ti, W, in amounts 0.05-10 percent by weight (1018- 1021 impurities/cm.3). The insulator is contacted by two electrodes which can be metals, such as transition metals. A particularly good device is NbBi alloy - NbBixOy-Bi.

10. 发明授权

US3656029A BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT 失效
标题翻译：欧洲氧化物，欧洲硫酸盐或欧洲三氧化二铁的耐腐蚀剂，具有三次过渡或VA元素
公开(公告)号：US3656029A
公开(公告)日：1972-04-11
申请号：US3656029D
申请日：1970-12-31
申请人： IBM
发明人： AHN KIE Y , PARK KYU C
IPC分类号： H01L45/00 , H01L3/16 , H01L3/22
CPC分类号： H01L45/04 , H01L45/145 , Y10S438/90
摘要： This disclosure provides a bistable resistor and materials therefor. The bistable resistor has base electrode, intermediate layer and counter electrode. Illustratively, intermediate layer includes a rare earth chalcogenide, e.g., EuO or EuS, doped with a percentage by weight of either a group VA element, e.g., Bi, or a first row transition element, e.g., Cr. Further, the practice of the invention includes having the host intermediate layer comprised of a combination of a plurality of different rare earth chalcogenides, and having a dopant configuration which includes a combination of a plurality of the individually suitable dopants.
摘要翻译：本公开提供了双稳态电阻器及其材料。双稳电阻器具有基极，中间层和对电极。示例性地，中间层包括稀土族硫族化物，例如掺杂有VA族元素例如Bi或第一行过渡元素例如Cr的重量百分比的EuO或EuS。此外，本发明的实践包括使主体中间层由多种不同的稀土硫族化物的组合组成，并且具有包括多个单独合适的掺杂剂的组合的掺杂剂构型。

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