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1. 发明授权

US5970348A Read-only memory and corresponding method of manufacturing by MOS technology 失效
标题翻译：只读存储器和相应的MOS技术制造方法
公开(公告)号：US5970348A
公开(公告)日：1999-10-19
申请号：US962398
申请日：1997-10-31
申请人： Philippe Boivin , Richard Fournel
发明人： Philippe Boivin , Richard Fournel
IPC分类号： H01L21/8246 , H01L27/112 , H01L24/8246
CPC分类号： H01L27/11266 , H01L27/112
摘要： In a method for the manufacture of cells of a read-only memory, each cell comprises a MOS transistor formed by a first diffusion and a second diffusion of impurities of a first type in a semiconductor substrate with impurities of a second type. These two diffusions are separated by a channel surmounted by a gate. A thick oxide zone is made in the zone designed for the first diffusion, so that the making of the diffusions leads to a first diffusion in two parts separated by this thick oxide zone, a first part adjoining the channel and a second part on the periphery of the transistor. A particular encoding step makes it possible, by means of a mask, to eliminate the thick oxide in certain cells so that these encoded cells have a first continuous diffusion.
摘要翻译：在制造只读存储器的单元的方法中，每个单元包括通过第一扩散形成的MOS晶体管和在半导体衬底中的第一类型的杂质与第二类杂质的第二扩散。这两个扩散通过由栅极上的通道分开。在设计用于第一扩散的区域中制造厚的氧化物区域，使得扩散的制造导致在由该厚氧化物区域分离的两个部分中的第一扩散，邻接通道的第一部分和周边上的第二部分的晶体管。特定的编码步骤可以通过掩模去除某些细胞中的厚氧化物，使得这些编码的细胞具有第一连续扩散。

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