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1. 发明授权

US5970348A Read-only memory and corresponding method of manufacturing by MOS technology 失效
标题翻译：只读存储器和相应的MOS技术制造方法
公开(公告)号：US5970348A
公开(公告)日：1999-10-19
申请号：US962398
申请日：1997-10-31
申请人： Philippe Boivin , Richard Fournel
发明人： Philippe Boivin , Richard Fournel
IPC分类号： H01L21/8246 , H01L27/112 , H01L24/8246
CPC分类号： H01L27/11266 , H01L27/112
摘要： In a method for the manufacture of cells of a read-only memory, each cell comprises a MOS transistor formed by a first diffusion and a second diffusion of impurities of a first type in a semiconductor substrate with impurities of a second type. These two diffusions are separated by a channel surmounted by a gate. A thick oxide zone is made in the zone designed for the first diffusion, so that the making of the diffusions leads to a first diffusion in two parts separated by this thick oxide zone, a first part adjoining the channel and a second part on the periphery of the transistor. A particular encoding step makes it possible, by means of a mask, to eliminate the thick oxide in certain cells so that these encoded cells have a first continuous diffusion.
摘要翻译：在制造只读存储器的单元的方法中，每个单元包括通过第一扩散形成的MOS晶体管和在半导体衬底中的第一类型的杂质与第二类杂质的第二扩散。这两个扩散通过由栅极上的通道分开。在设计用于第一扩散的区域中制造厚的氧化物区域，使得扩散的制造导致在由该厚氧化物区域分离的两个部分中的第一扩散，邻接通道的第一部分和周边上的第二部分的晶体管。特定的编码步骤可以通过掩模去除某些细胞中的厚氧化物，使得这些编码的细胞具有第一连续扩散。

2. 发明申请

US20100151595A1 MAGNETIC RAM 有权
标题翻译：磁性RAM
公开(公告)号：US20100151595A1
公开(公告)日：2010-06-17
申请号：US12709602
申请日：2010-02-22
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/1675 , H01L27/228
摘要： A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
摘要翻译：一种用于磁性RAM的存储元件，在第一绝缘层的第一凹槽中具有第一磁性部分; 以及覆盖第一绝缘层的第二绝缘层的第二凹部中的非磁性部分和第二磁性部分，暴露第一磁性部分的第二凹部和围绕第一磁性部分的第一绝缘层的一部分， - 磁性部分插入在第一和第二磁性部分之间。

3. 发明授权

US07315071B2 Magnetic RAM 有权
标题翻译：磁性RAM
公开(公告)号：US07315071B2
公开(公告)日：2008-01-01
申请号：US11323060
申请日：2005-12-30
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/16 , H01L27/228
摘要： A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the recess portion with slanted sides and in contact, at the level of the bottom of the recess, with a conductive portion, a non-magnetic layer portion substantially conformally covering the first magnetic layer portion and a second magnetic layer portion covering the non-magnetic layer portion.
摘要翻译：一种用于磁性RAM的存储元件，包含在绝缘层的凹部中，该凹部包括具有向下延伸到凹部底部的倾斜侧的部分，该存储元件包括基本上保形地覆盖该凹部的底部的第一磁性层部分凹部和具有倾斜侧面并且在凹部的底部的接触处的凹部具有导电部分，基本上保形地覆盖第一磁性层部分的非磁性层部分和覆盖非凹槽部分的第二磁性层部分， - 磁性层部分。

4. 发明申请

US20060145198A1 Magnetic RAM 有权
标题翻译：磁性RAM
公开(公告)号：US20060145198A1
公开(公告)日：2006-07-06
申请号：US11323060
申请日：2005-12-30
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L29/768
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/16 , H01L27/228
摘要： A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the recess portion with slanted sides and in contact, at the level of the bottom of the recess, with a conductive portion, a non-magnetic layer portion substantially conformally covering the first magnetic layer portion and a second magnetic layer portion covering the non-magnetic layer portion.
摘要翻译：一种用于磁性RAM的存储元件，包含在绝缘层的凹部中，该凹部包括具有向下延伸到凹部底部的倾斜侧的部分，该存储元件包括基本上保形地覆盖该凹部的底部的第一磁性层部分凹部和具有倾斜侧面并且在凹部的底部的接触处的凹部具有导电部分，基本上保形地覆盖第一磁性层部分的非磁性层部分和覆盖非凹部的第二磁性层部分， - 磁性层部分。

5. 发明授权

US07692228B2 Magnetic RAM 有权
标题翻译：磁性RAM
公开(公告)号：US07692228B2
公开(公告)日：2010-04-06
申请号：US11323073
申请日：2005-12-30
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L27/115
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/1675 , H01L27/228
摘要： A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
摘要翻译：一种用于磁性RAM的存储元件，在第一绝缘层的第一凹槽中具有第一磁性部分; 以及覆盖第一绝缘层的第二绝缘层的第二凹部中的非磁性部分和第二磁性部分，暴露第一磁性部分的第二凹部和围绕第一磁性部分的第一绝缘层的一部分， - 磁性部分插入在第一和第二磁性部分之间。

6. 发明授权

US06590256B2 EEPROM cell testing circuit 失效
标题翻译： EEPROM单元测试电路
公开(公告)号：US06590256B2
公开(公告)日：2003-07-08
申请号：US09447977
申请日：1999-11-23
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L29788
CPC分类号： G11C29/50004 , G11C16/04 , G11C29/04 , G11C29/24 , G11C29/50 , G11C2029/5002
摘要： A testing circuit made on a silicon wafer including a plurality of identical cells, each of which includes a primary capacitor of given characteristics, which includes a test capacitor of same characteristics as each primary capacitor and of surface at least equal to the sum of the surfaces of the primary capacitors.
摘要翻译：一种在硅晶片上制成的测试电路，其包括多个相同的单元，每个单元包括具有给定特性的初级电容器，其包括与每个初级电容器相同特性的测试电容器和至少等于表面总和的表面的主电容器。

7. 发明授权

US4997777A Manufacturing process for an integrated circuit comprising double gate components 失效
标题翻译：包括双门组件的集成电路的制造工艺
公开(公告)号：US4997777A
公开(公告)日：1991-03-05
申请号：US284425
申请日：1988-12-14
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/08 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/28273 , H01L21/82345 , H01L29/0847 , H01L29/66636 , H01L29/7834
摘要： A process for manufacturing integrated circuits comprising insulated gate MOS transistors and double gate memory components, comprises the following steps: forming on the areas where the memory components will be formed a first insulating layer (2) and a first gate level (4); forming on the transistor areas and the memory areas a second insulating layer (5), a second gate level (6) and a first photoresist layer (7); etching the first photoresist layer and the second gate level according to chosen configurations; coating the transistor areas with a second photoresist layer (20). This process further comprises the following steps: selectively etching the second photoresist layer at the center of the places where the transistor drains and sources are to be formed; etching the apparent oxide areas and then the apparent gate and substrate areas; removing the second photoresist layer; and carrying out an ionic implantation of the drains and sources.
摘要翻译：一种用于制造包括绝缘栅MOS晶体管和双栅存储器组件的集成电路的方法，包括以下步骤：在要形成存储器组件的区域上形成第一绝缘层（2）和第一栅极级（4）; 在晶体管区域和存储区域上形成第二绝缘层（5），第二栅极层（6）和第一光致抗蚀剂层（7）; 根据选择的配置蚀刻第一光致抗蚀剂层和第二栅极电平; 用第二光致抗蚀剂层（20）涂覆晶体管区域。该方法还包括以下步骤：在晶体管漏极和源将要形成的位置的中心处选择性地蚀刻第二光致抗蚀剂层; 蚀刻表观氧化物区域，然后蚀刻表观栅极和衬底区域; 去除所述第二光致抗蚀剂层; 并进行排水和离子源的离子注入。

8. 发明授权

US08048685B2 Magnetic RAM 有权
标题翻译：磁性RAM
公开(公告)号：US08048685B2
公开(公告)日：2011-11-01
申请号：US12709602
申请日：2010-02-22
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/1675 , H01L27/228
摘要： A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
摘要翻译：一种用于磁性RAM的存储元件，在第一绝缘层的第一凹槽中具有第一磁性部分; 以及覆盖第一绝缘层的第二绝缘层的第二凹部中的非磁性部分和第二磁性部分，暴露第一磁性部分的第二凹部和围绕第一磁性部分的第一绝缘层的一部分， - 磁性部分插入在第一和第二磁性部分之间。

9. 发明申请

US20060145226A1 Magnetic RAM 有权
标题翻译：磁性RAM
公开(公告)号：US20060145226A1
公开(公告)日：2006-07-06
申请号：US11323073
申请日：2005-12-30
申请人： Philippe Boivin
发明人： Philippe Boivin
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/1675 , H01L27/228
摘要： A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
摘要翻译：一种用于磁性RAM的存储元件，在第一绝缘层的第一凹槽中具有第一磁性部分; 以及覆盖第一绝缘层的第二绝缘层的第二凹部中的非磁性部分和第二磁性部分，暴露第一磁性部分的第二凹部和围绕第一磁性部分的第一绝缘层的一部分， - 磁性部分插入在第一和第二磁性部分之间。

10. 发明授权

US08853615B2 Ultraviolet radiation measurement sensor 有权
标题翻译：紫外线辐射测量传感器
公开(公告)号：US08853615B2
公开(公告)日：2014-10-07
申请号：US13552787
申请日：2012-07-19
申请人： Julia Castellan , Philippe Boivin
发明人： Julia Castellan , Philippe Boivin
IPC分类号： G01J1/44 , G01J1/42
CPC分类号： G01J1/4228 , G01J1/429 , G01J1/44
摘要： A method for measuring radiation of energy photons, such as ultraviolet radiation, on a surface, may include programming at least one transistor by at least transmitting an electric charge to it. The method may further include measuring an electrical quantity of the at least one transistor receiving radiation of energy photons and estimating, based on this electrical quantity, an amount of radiation received.
摘要翻译：用于测量表面上的能量光子（例如紫外线辐射）的辐射的方法可以包括通过至少向其传输电荷来编程至少一个晶体管。该方法还可以包括测量接收能量光子辐射的至少一个晶体管的电量，并且基于该电量估计接收到的辐射量。

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