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1. 发明申请

US20020189079A1 Method of manufacturing a thin-film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20020189079A1
公开(公告)日：2002-12-19
申请号：US10218578
申请日：2002-08-15
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki
IPC分类号： G11B005/127 , H04R031/00
CPC分类号： G11B5/313 , G11B5/3116 , G11B5/3967 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/4906
摘要： A thin-film magnetic head and a method of manufacturing the same of the invention achieve precise control of a magnetic pole width with and a sufficient overwrite property even when the pole width is reduced and achieve precise control of a throat height. In the thin-film magnetic head of the invention, a pole portion of a bottom pole layer and an insulating layer are formed on a yoke portion of the bottom pole layer. The throat height is defined by the interface between the pole portion and the insulating layer. The pole portion and the insulating layer form a flat surface on a side of a recording gap layer. A top pole layer includes: a pole portion having a width that defines a recording track width; and a yoke portion having a width greater than that of the pole portion and magnetically coupled to the pole portion. The interface between the pole portion and the yoke portion is located on the flat recording gap layer.
摘要翻译：本发明的薄膜磁头及其制造方法即使当磁极宽度减小并且实现喉部高度的精确控制时，也能够实现磁极宽度的精确控制和充分的覆盖特性。在本发明的薄膜磁头中，底极层的极部和绝缘层形成在底极层的磁轭部上。喉部高度由极部和绝缘层之间的界面限定。极部分和绝缘层在记录间隙层的一侧形成平坦表面。顶极层包括：具有限定记录轨道宽度的宽度的极部; 以及轭部，其宽度大于所述极部的宽度，并且磁耦合到所述极部。极部和轭部之间的界面位于平坦记录间隙层上。

2. 发明申请

US20010023030A1 Thin-film magnetic head material and method of manufacturing same and method of manufacturing thin-film magnetic head 有权
公开(公告)号：US20010023030A1
公开(公告)日：2001-09-20
申请号：US09865719
申请日：2001-05-29
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki , Hiroyuki Itoh
IPC分类号： G11B005/127
CPC分类号： G11B5/3173 , G11B5/3103 , G11B5/3116 , G11B5/3163 , G11B5/3166 , G11B5/3967 , Y10S428/90 , Y10T29/49004 , Y10T29/49021 , Y10T29/49032 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046 , Y10T29/49789 , Y10T29/49792 , Y10T29/49794 , Y10T29/49798 , Y10T428/11 , Y10T428/1171 , Y10T428/24355
摘要： An object of the invention is to increase the number of thin-film magnetic heads obtained. In a wafer a plurality of rows of head-to-be sections to be thin-film magnetic heads are aligned. The wafer includes: an inter-row cutting section provided to be a position at which adjacent ones of the rows are to be separated; and an intra-row cutting section provided to be a position at which adjacent ones of the head-to be sections in each of the rows are to be separated. In the wafer a detection element for detecting an amount of processing is formed near the medium-facing surface-side end of the intra-row cutting section. An electrode for monitoring is formed in the inter-row cutting section in the wafer for electrically connecting the detection element to an external device. Furthermore, a lead for monitoring is formed in the intra-row cutting section for electrically connecting the electrode to the detection element.

3. 发明申请

US20010012541A1 Method of manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20010012541A1
公开(公告)日：2001-08-09
申请号：US09765293
申请日：2001-01-22
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki , Atsushi Iijima , Seiji Yari , Katsuya Kanakubo
IPC分类号： B05D001/32 , C23C014/34 , B05D005/12 , B05D003/00 , B05D001/36
CPC分类号： G11B5/3163 , G11B5/3116 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A method of manufacturing a thin-film magnetic head allowing dimension control of the width of the magnetic pole and reduction of the time required for formation is provided. A layer of iron nitride formed by sputtering is selectively etched with the RIE to form a top pole tip. In this etching process with RIE, chlorine-type gas is selected as a gas seed for etching, and the process temperature is in a range of 50null C. to 300null C. Subsequently, using part of a first mask and a tip portion of the top pole tip as a mask, part of both the write gap layer and the second bottom pole are etched with the RIE similarly to the above process, to thereby form a magnetic pole. The etching conditions are optimized by performing the process with the RIE under the above conditions, so that both of the top pole tip and the magnetic pole can be formed with high precision, and that the time required for forming both of these elements can be significantly reduced.
摘要翻译：提供一种制造允许尺寸控制磁极宽度并减少形成所需时间的薄膜磁头的方法。通过RIE选择性地蚀刻由溅射形成的氮化铁层，以形成顶极尖端。在用RIE的蚀刻工艺中，选择氯型气体作为蚀刻用气体种子，并且处理温度在50℃至300℃的范围内。随后，使用部分第一掩模和尖端部分作为掩模，类似于上述过程，用RIE蚀刻写间隙层和第二底极两者的一部分，从而形成磁极。通过在上述条件下通过RIE进行处理来优化蚀刻条件，从而可以高精度地形成顶极尖端和磁极两者，并且形成这两个元件所需的时间可以显着地减少

4. 发明申请

US20010000984A1 Thin film magnetic head and method of manufacturing the same 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US20010000984A1
公开(公告)日：2001-05-10
申请号：US09740058
申请日：2000-12-20
申请人： TDK Corporation
发明人： Yoshitaka Sasaki
IPC分类号： G11B005/127 , G11B005/33
CPC分类号： G11B5/313 , G11B5/17 , G11B5/3163 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T29/49062
摘要： In a thin film magnetic head including a first magnetic layer 36, a write gap layer 41 and a second magnetic layer 42, 47 formed on a substrate 31, 32 and one or more thin film coil layers provided between the first and second magnetic layers, in order to shorten a magnetic path length of the thin film coil and to improve characteristics by reducing a spacing between successive coil windings of at least one thin film coil layer, a silicon oxide film 37 is formed on the first magnetic layer 36, coil-shaped recesses 38 are formed by a reactive ion etching in a surface of the silicon oxide layer with a narrow spacing, a copper layer is deposited by Cu-CVD, the copper layer is polished by CMP such that the surface of the silicon oxide layer is exposed to form coil windings 40 of the first thin film coil layer, and the write gap layer is formed on the coil windings. Since an inorganic insulating layer made of silicon oxide, silicon nitride or alumina which can be subjected to a fine processing by a reactive ion etching is used, the coil windings 40 can be formed with an extremely small spacing such as 0.3-0.5 nullm.
摘要翻译：在包括形成在基板31,32上的第一磁性层36，写入间隙层41和第二磁性层42,47以及设置在第一和第二磁性层之间的一个或多个薄膜线圈层的薄膜磁头中，为了缩短薄膜线圈的磁路长度，通过减小至少一个薄膜线圈层的连续线圈之间的间隔来改善特性，在第一磁性层36上形成氧化硅膜37，通过在间隔较窄的氧化硅层的表面上的反应离子蚀刻形成凹状的凹部38，通过Cu-CVD沉积铜层，通过CMP对铜层进行研磨，使得氧化硅层的表面为暴露于第一薄膜线圈层的线圈绕组40，并且写间隙层形成在线圈绕组上。由于使用由氧化硅制成的无机绝缘层，可以通过反应离子蚀刻进行精细加工的氮化硅或氧化铝，所以线圈绕组40可以以0.3-0.5μm的极小间隔形成。

5. 发明申请

US20010000303A1 Thin film magnetic head and method of manufacturing the same 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US20010000303A1
公开(公告)日：2001-04-19
申请号：US09726444
申请日：2000-12-01
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki
IPC分类号： G11B005/33 , G11B005/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3166 , G11B5/3967 , G11B2005/3996 , Y10T29/49032
摘要： Provided are a thin film magnetic head and a method of manufacturing the same which can obtain sufficient overwrite properties even when a pole width is reduced. Aside from an insulating film for embedding thin film coils, an insulating film pattern made of a photoresist or the like is formed between a top pole chip and the thin film coils. A TH0 position is defined by a front edge of the insulating film pattern. The insulating film pattern has a round inclined surface near the front edge thereof, and consequently a magnetic flux smoothly flows through a top connection portion on the insulating film pattern. A region between the insulating film pattern and a front portion of a top pole is filled with the top connection portion, and thus a sufficient magnetic volume is ensured in this region. The top pole chip is partly covered with the top connection portion on at least three sides. Thus, an area of contact between the top pole chip and the top connection portion is increased, and therefore a loss of magnetic flux propagation on a boundary surface between both of them is reduced.
摘要翻译：提供一种薄膜磁头及其制造方法，即使当磁极宽度减小时也能获得足够的重写特性。除了用于嵌入薄膜线圈的绝缘膜之外，在顶极芯片和薄膜线圈之间形成由光致抗蚀剂等制成的绝缘膜图案。 TH0位置由绝缘膜图案的前边缘限定。绝缘膜图案在其前边缘附近具有圆形倾斜表面，因此磁通平滑地流过绝缘膜图案上的顶部连接部分。绝缘膜图案与顶极的前部之间的区域填充有顶部连接部分，因此在该区域中确保了足够的磁性体积。顶极芯片至少在三面覆盖有顶部连接部分。因此，顶极芯片和顶部连接部分之间的接触面积增加，因此两者之间的边界面上的磁通传播损失减小。

6. 发明申请

US20040154159A1 Thin-film magnetic head and method of manufacturing same 失效
公开(公告)号：US20040154159A1
公开(公告)日：2004-08-12
申请号：US10790049
申请日：2004-03-02
申请人： TDK Corporation
发明人： Yoshitaka Sasaki , Tohru Inoue
IPC分类号： G11B005/187
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49053 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： A thin-film magnetic head comprises a reproducing head and a recording head. The reproducing head comprises: a GMR element; a bottom shield layer and a top shield layer for shielding the GMR element; conductive layers connected to the GMR element; and shield gap films formed between the shield layers. Each of the shield gap films is made up of a plurality of thin alumina films stacked that are formed by performing the step of forming a thin alumina film by low pressure CVD, for example, a plurality of times.

7. 发明申请

US20040069741A1 Method of manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20040069741A1
公开(公告)日：2004-04-15
申请号：US10678312
申请日：2003-10-06
申请人： TDK Corporation
发明人： Yoshitaka Sasaki , Atsushi Iijima , Seiji Yari , Katsuya Kanakubo
IPC分类号： B44C001/22
CPC分类号： G11B5/3163 , G11B5/3116 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A method of manufacturing a thin-film magnetic head allowing dimension control of the width of the magnetic pole and reduction of the time required for formation is provided. A layer of iron nitride formed by sputtering is selectively etched with the RIE to form a top pole tip. In this etching process with RIE, chlorine-type gas is selected as a gas seed for etching, and the process temperature is in a range of 50null C. to 300null C. Subsequently, using part of a first mask and a tip portion of the top pole tip as a mask, part of both the write gap layer and the second bottom pole are etched with the RIE similarly to the above process, to thereby form a magnetic pole. The etching conditions are optimized by performing the process with the RIE under the above conditions, so that both of the top pole tip and the magnetic pole can be formed with high precision, and that the time required for forming both of these elements can be significantly reduced.
摘要翻译：提供一种制造允许尺寸控制磁极宽度并减少形成所需时间的薄膜磁头的方法。通过RIE选择性地蚀刻由溅射形成的氮化铁层，以形成顶极尖端。在用RIE的蚀刻工艺中，选择氯型气体作为蚀刻用气体种子，并且处理温度在50℃至300℃的范围内。随后，使用部分第一掩模和尖端部分作为掩模，类似于上述过程，用RIE蚀刻写间隙层和第二底极两者的一部分，从而形成磁极。通过在上述条件下通过RIE进行处理来优化蚀刻条件，从而可以高精度地形成顶极尖端和磁极两者，并且形成这两个元件所需的时间可以显着地减少

8. 发明申请

US20040008447A1 Thin film magnetic head and method of manufacturing the same 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US20040008447A1
公开(公告)日：2004-01-15
申请号：US10613073
申请日：2003-07-07
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki , Atsushi Iijima , Kazumasa Fukuda
IPC分类号： G11B005/147
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/4906
摘要： On a first magnetic layer 27, is formed a ring-shaped insulating layer 28 whose air bearing surface side edge defines a reference position for a throat height, and after forming a write gap layer 29, a second magnetic layer 30 is formed such that the second magnetic layer extends over the ring-shaped insulating layer 28. The write gap layer is selectively removed by performing an etching process using the second magnetic layer as a mask, and then the first magnetic layer is partially removed over a part of its thickness to form a trim structure. After forming a thin film coil 33, 35 within the ring-shaped insulating layer, a third magnetic layer is formed to be brought into contact with a rear portion of the second magnetic layer 31. The third magnetic layer may be contacted with a surface, a surface and side walls or a surface, side walls and an end surface of rear portion of the second magnetic layer. In the thin film magnetic head, a pole chip defining a track width is narrow, magnetic flux saturation and leakage of magnetic flux can be suppressed in spite of a short throat height, and a high recording efficiency can be attained. The invention provides a method of manufacturing easily the thin film magnetic head having such superior performance with a high yield.
摘要翻译：在第一磁性层27上形成环形绝缘层28，其环形绝缘层28的空气轴承表面侧边缘限定了喉部高度的基准位置，并且在形成写入间隙层29之后，形成第二磁性层30，第二磁性层在环形绝缘层28上延伸。通过使用第二磁性层作为掩模进行蚀刻工艺来选择性地去除写入间隙层，然后将第一磁性层的一部分厚度部分地去除，形成一个装饰结构。在环状绝缘层内形成薄膜线圈33,35之后，形成与第二磁性层31的后部接触的第三磁性层。第三磁性层可以与表面接触，表面和侧壁或表面，侧壁和第二磁性层后部的端面。在薄膜磁头中，限定磁道宽度的磁极芯片窄，尽管具有短的喉部高度，也可以抑制磁通饱和度和磁通量的泄漏，并且可以获得高的记录效率。本发明提供一种以高产率容易地制造具有这种优异性能的薄膜磁头的方法。

9. 发明申请

US20020053130A1 Method of manufacturing a thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US20020053130A1
公开(公告)日：2002-05-09
申请号：US09974815
申请日：2001-10-12
申请人： TDK CORPORATION
发明人： Yoshitaka Sasaki
IPC分类号： G11B005/127
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/313 , G11B5/3967 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49052
摘要： A method of manufacturing a thin film magnetic head capable of improving a yield while making a pole width extremely minute with high precision is provided. A write gap layer and a bottom pole are selectively etched in a region other than a portion corresponding to a front end part through the RIE with the front end part having an extremely minute uniform width as a mask in an atmosphere of gas including at least chlorine out of chlorine and boron trichloride and at an ambient temperature within a range of 300null C. to 300null C. The width (pole width) of a pole portion can be made uniform with high precision along a length direction so that the yield of the thin film magnetic head can be improved.
摘要翻译：提供了一种制造能够以高精度使极宽度极微细化的同时提高成品率的薄膜磁头的方法。在除了通过RIE的前端部对应的部分以外的区域中，在包含至少氯的气体的气氛中，前端部具有非常微小的均匀宽度作为掩模，有选择地刻蚀写间隙层和底极在三氯化碳和三氯化硼中，并且在300℃至300℃的范围内的环境温度下进行。极部的宽度（极宽度）可以沿着长度方向以高精度均匀，从而使得可以改善薄膜磁头。

10. 发明申请

US20020013995A1 Thin film magnetic head and method of manufacturing the same 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US20020013995A1
公开(公告)日：2002-02-07
申请号：US09971917
申请日：2001-10-09
申请人： TDK Corporation
发明人： Yoshitaka Sasaki
IPC分类号： H04R031/00 , G11B005/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071
摘要： After forming a bottom shield layer on a substrate, a GMR element embedded within a shield gap layer is formed. After forming a write gap layer on a first magnetic layer and an inorganic insulating layer, a second magnetic layer is formed to have a pole portion within a cut-out portion of the inorganic insulating layer and a connecting portion extending above the inorganic insulating layer. A third magnetic layer is formed that makes contact not only with a surface of the pole portion of the second magnetic layer but also with side walls of the pole portion. The thin film magnetic head has a narrow pole chip defining a track width, although the throat height is small, saturation and leakage of a magnetic flux can be suppressed, thin film magnetic head having a high recording efficiency can be manufactured with a high yield.
摘要翻译：在衬底上形成底部屏蔽层之后，形成嵌入屏蔽间隙层内的GMR元件。在第一磁性层和无机绝缘层上形成写入间隙层之后，形成第二磁性层，以在无机绝缘层的切口部分内具有极性部分，以及在无机绝缘层上方延伸的连接部分。形成第三磁性层，其不仅与第二磁性层的极部的表面接触，而且与极部的侧壁接触。薄膜磁头具有限定磁道宽度的窄极片，虽然喉部高度小，但是可以抑制磁通的饱和和泄漏，可以以高产率制造具有高记录效率的薄膜磁头。

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