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    • 3. 发明专利
    • JP2002500407A
    • 2002-01-08
    • JP2000526828
    • 1998-12-04
    • H01F7/02H01J3/24H01J23/087H01J37/14H05H7/04H05H9/02
    • In accordance with the present invention, there is provided a method of profiling a total vector potential field of a periodic permanent magnetic field structure, wherein desired elements of the total vector potential field are known. The magnetic field structure comprises a plurality of magnets having individual vector potential fields which collectively form the total vector potential field. The method provides for using an electromagnetic solver to generate data files representative of each individual magnet's contribution to the total vector potential field. Such data files are generated by assuming a magnetization value of one unit for a selected magnet, setting magnetization values of zero for all other magnets, setting the electromagnetic solver to use high resolution proximate the selected magnet and to use low resolution elsewhere, using the electromagnetic solver to compute the individual vector potential fields for all space for which the total vector potential field is to be profiled, and repeating such steps for each magnet of the plurality of magnets to generate the data files. The method further provides for using the data files to determine magnetization values for each magnet necessary to provide the desired elements of the total vector potential field, and using the determined magnetization values to superimpose the individual vector potential fields to determine the total vector potential field.
    • 10. 发明授权
    • Method and apparatus for broad beam ion implantation
    • 宽束离子注入的方法和装置
    • US5126575A
    • 1992-06-30
    • US693784
    • 1991-04-29
    • Nicholas R. White
    • Nicholas R. White
    • C23C14/48H01J3/24H01J37/05H01J37/317H01L21/265
    • H01J37/3171H01J2237/083
    • A single aperture ion source is used to produce a ribbon shaped ion beam through which a targer may be transported. At an aperture of the ion source the ion beam converges in a vertical direction and diverges in a horizontal direction. The ion beam is passed through the poles of an analyzing magnet. A waist of the ion beam in the vertical direction occurs at the analyzing magnet. The analyzing magnet causes the ion beam to converge in the horizontal direction. Immediately before the ion beam strikes the target, the ion beam is passed through a focussing magnet which renders the ion beam trajectories substantially parallel. Between the ion source and the target, the ion beam may be passed through one or more resolving slits, as necessary, to trim the ion beam and assure that a focused, uniform beam reached the target. At the target, the analyzing magnet projects an inverted image of the aperture of the ion source. Further, a cross section of the ion beam is in the shape of a ribbon, the length of the ribbon being wider than the target. Using a conveyer the target is passed through the ion beam resulting in a uniform implantation of ions.
    • 使用单个孔径离子源来生产带状离子束,通过该离子束可以传送调节器。 在离子源的孔径处,离子束在垂直方向上会聚并沿水平方向发散。 离子束通过分析磁体的磁极。 离子束在垂直方向上的腰围发生在分析磁铁上。 分析磁铁使离子束在水平方向上会聚。 在离子束撞击目标物体之前,离子束通过聚焦磁体,使得离子束轨迹基本上平行。 在离子源和靶之间,离子束可以根据需要通过一个或多个分解狭缝,以修整离子束,并确保聚焦的均匀光束到达靶。 在目标处,分析磁体投射离子源的孔的反转图像。 此外,离子束的横截面为带状,色带的长度比目标宽。 使用输送机,目标物通过离子束,导致离子的均匀注入。