专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07902527B2 Apparatus and methods for ion beam implantation using ribbon and spot beams 有权
标题翻译：使用色带和点光束进行离子束注入的设备和方法
公开(公告)号：US07902527B2
公开(公告)日：2011-03-08
申请号：US12194515
申请日：2008-08-19
申请人： Jiong Chen , Nicholas R. White
发明人： Jiong Chen , Nicholas R. White
IPC分类号： H01J37/317 , H01J37/28 , G21K1/00
CPC分类号： H01J37/08 , H01J37/147 , H01J37/1472 , H01J37/3171 , H01J2237/022 , H01J2237/04735 , H01J2237/04756 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/1503 , H01J2237/201 , H01J2237/31701
摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
摘要翻译：公开了一种具有多种工作模式的离子注入装置。离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。提供多极镜头以控制光束的均匀性和准直。公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。

2. 发明授权

US07740247B2 Compound sliding seal unit suitable for atmosphere to vacuum applications 有权
标题翻译：复合滑动密封单元适用于大气至真空应用
公开(公告)号：US07740247B2
公开(公告)日：2010-06-22
申请号：US12283183
申请日：2008-11-10
申请人： Richard F. McRay , Nicholas R. White
发明人： Richard F. McRay , Nicholas R. White
IPC分类号： F16J51/02 , F16K3/28 , G03B27/64
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/2006 , H01J2237/20228 , Y10S277/911 , Y10S277/913
摘要： The present invention is a compound sliding seal unit of markedly reduced size and height dimensions which is employed as a discrete assembly for both the passage across and the at-will height adjustment of a mounted, rotatable shaft which extends from the atmospheric environment portion into the vacuum environmental portion of an ion implanter apparatus. The extended, rotatable shaft is typically fashioned as either a rotatable hollow tube or conduit (suitable for the passage of electrical components) and/or as a rotatable support suitable for the mounting of a pivotal scanning radial arm translation system. The manner of construction and the substantially reduced height dimensions of the compound sliding seal unit permits on-demand changes of height for the mounted, rotatable shaft which extends from the atmospheric environment and extends through the compound unit into the confined and limited spatial volume of a vacuum environment within a conventional ion implantation apparatus. The compound unit also allows the user to maintain a high vacuum within the vacuum environment despite the fact that the height of the feed-through member can be raised and lowered repeatedly at will. Its compact size frees space which can be used to extend the vacuum chamber for purposes such as a deep Faraday cup for beam measurement.
摘要翻译：本发明是一种具有明显减小的尺寸和高度尺寸的复合滑动密封单元，其被用作用于从大气环境部分延伸到安装的可旋转轴的通过横跨和即将高度调节的离散组件，离子注入机装置的真空环境部分。延伸的可旋转轴通常被形成为可旋转的中空管或导管（适于电气部件的通过）和/或作为适于安装枢转扫描径向臂翻转系统的可旋转支撑件。复合滑动密封单元的构造方式和大体上减小的高度尺寸允许从大气环境延伸并延伸穿过复合单元的安装的可旋转轴的高度的按需改变变为有限的空间体积常规离子注入装置内的真空环境。复合单元还允许用户在真空环境内保持高真空，尽管馈送构件的高度可以随意重复升高和降低。其紧凑的尺寸释放了可用于延伸真空室的空间，用于例如用于光束测量的深法拉第杯。

3. 发明授权

US07112789B2 High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams 有权
标题翻译：高纵横比，高质量分辨率分析仪磁体和带状离子束系统
公开(公告)号：US07112789B2
公开(公告)日：2006-09-26
申请号：US11123924
申请日：2005-05-06
申请人： Nicholas R. White , Jiong Chen
发明人： Nicholas R. White , Jiong Chen
IPC分类号： H01J37/317 , H01J37/147 , H01J49/20
CPC分类号： H01J37/05 , H01J37/3171 , H01J49/30
摘要： The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry.Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis. There is no fundamental limit to the aspect ratio of the beam that can be analyzed.
摘要翻译：本发明提供了一种窗框式磁体，其具有镜对称的成对的床架线圈的排列阵列，可以使高纵横比带状离子束通过不小于约45度且不超过约110度的角度弯曲，并且可以将其聚焦通过解析槽进行质量分析。可以超过弯曲半径的50％的梁的长横轴与产生的磁场对准。成对的床架线圈阵列提供对边缘场的严格控制，本质上具有良好的场均匀性，并且能够制造比其他常规用于离子注入工业的磁体方式更轻的结构。在本发明的系统中，带状光束以低像差重新聚焦，以实现高分辨能力，这在离子注入工业中具有重要价值。通过使用小型离子源和四极透镜在扩展和分析后对光束进行准直，系统尺寸进一步降低。对于可分析的梁的纵横比没有根本的限制。

4. 发明授权

US06998625B1 Ion implanter having two-stage deceleration beamline 有权
标题翻译：离子注入机具有两级减速束线
公开(公告)号：US06998625B1
公开(公告)日：2006-02-14
申请号：US09602059
申请日：2000-06-23
申请人： Charles M. McKenna , Nicholas R. White , Douglas A. Brown , Edward Bell , Svetlana Radovanov
发明人： Charles M. McKenna , Nicholas R. White , Douglas A. Brown , Edward Bell , Svetlana Radovanov
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3171 , H01J2237/0041 , H01J2237/022 , H01J2237/047 , H01J2237/31705
摘要： An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.
摘要翻译：离子注入机包括用于产生离子束的离子源，用于从离子束分离不需要的组分的分析器，用于以第一输送能量输送离子束通过分析器的第一束输送装置，位于离子束下游的第一减速阶段用于将离子束从第一输送能量减速到第二输送能量的分析器，位于第一减速阶段下游的用于从离子束分离中性粒子的光束过滤器，用于将离子束传送通过束在所述第二输送能量下进行过滤，所述第二减速阶段位于所述束过滤器的下游，用于将所述离子束从所述第二输送能量减速到最终能量，以及用于支撑用于离子注入的靶的靶位点。离子束以最终能量传递到目标位置。在双重减速模式中，第二传输能量大于最低能量时的最终能量。在增强的漂移模式中，第二传输能量等于在低能量下最高光束纯度的最终能量。

5. 发明申请

US20120235053A1 Mass analyzer apparatus and systems operative for focusing ribbon ion beams and for separating desired ion species from unwanted ion species in ribbon ion beams 有权
标题翻译：用于聚集带状离子束的质量分析仪器和系统，用于将期望的离子物质与带状离子束中的不需要的离子物质分离
公开(公告)号：US20120235053A1
公开(公告)日：2012-09-20
申请号：US13385618
申请日：2012-02-27
申请人： Nicholas R. White
发明人： Nicholas R. White
IPC分类号： H01J29/64
CPC分类号： H01J3/22 , H01J3/24 , H01J37/05 , H01J37/14 , H01J37/3171 , H01J49/06 , H01J49/20 , H01J2237/055 , H01J2237/057
摘要： The present invention is an apparatus and multi-unit assembly which is able to achieve two different and highly desirable functions: A focusing of a charged particle beam; and a mass separation of desired ion species from unwanted ion species in traveling ion beams. The apparatus is a simply organized and easily manufactured article; is relatively light-weight and less expensive to make; and is easier to install, align, and operate than conventionally available devices.
摘要翻译：本发明是一种能够实现两种不同和非常理想的功能的装置和多单元组件：带电粒子束的聚焦; 并且将所需离子物质与不需要的离子物质在行进离子束中的质量分离。该装置是简单有组织且容易制造的物品; 相对较轻，制造成本较低; 并且比常规可用设备更容易安装，对准和操作。

6. 发明申请

US20100001204A1 Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam 有权
标题翻译：用于偏转，聚焦和控制行进离子束的均匀性的开放式电磁校正器组件和方法
公开(公告)号：US20100001204A1
公开(公告)日：2010-01-07
申请号：US12584384
申请日：2009-09-04
申请人： Nicholas R. White
发明人： Nicholas R. White
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/153 , H01J2237/152 , H01J2237/1534
摘要： The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.
摘要翻译：本发明是用于离子注入装置的电磁控制器组件，并且提供了可用于三个可识别的独立和不同功能的结构构造和方法：（i）调整任何类型的行进中携带的带电粒子的轨迹离子束，其位于注入平面或工作表面，用于将带电离子放置到制备的工件（例如硅晶片或平板玻璃面板）中; （ii）同时改变和改变行进光束中离子的平行度; 和（iii）同时地，为了控制沿着行进离子束的横向的电流密度的均匀性，不管梁是高方位的，连续的带状离子束还是扫描的带状离子束。

7. 发明授权

US4980556A Apparatus for generating high currents of negative ions 失效
标题翻译：用于产生大电流负离子的装置
公开(公告)号：US4980556A
公开(公告)日：1990-12-25
申请号：US492428
申请日：1990-03-06
申请人： John P. O'Connor , Nicholas R. White
发明人： John P. O'Connor , Nicholas R. White
IPC分类号： H01J27/02
CPC分类号： H01J27/028
摘要： Disclosed is an apparatus for the generation of large currents of negative ions for use in tandem accelerators, suitable for employment in ion implantation on an industrial production scale. The apparatus includes a high current positive ion source which is coupled to a charge exchange canal where a fraction of the positive ions are transformed into negative ions.
摘要翻译：公开了一种用于产生用于串联加速器的大量负离子电流的装置，适用于工业生产规模的离子注入。该装置包括大电流正离子源，其耦合到电荷交换管道，其中一部分正离子转变成负离子。

8. 发明授权

US08035087B2 Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam 有权
标题翻译：用于偏转，聚焦和控制行进离子束的均匀性的开放式电磁校正器组件和方法
公开(公告)号：US08035087B2
公开(公告)日：2011-10-11
申请号：US12584384
申请日：2009-09-04
申请人： Nicholas R. White
发明人： Nicholas R. White
IPC分类号： H01J1/50 , H01J37/08 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/153 , H01J2237/152 , H01J2237/1534
摘要： The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.
摘要翻译：本发明是用于离子注入装置的电磁控制器组件，并且提供了可用于三个可识别的独立和不同功能的结构构造和方法：（i）调整任何类型的行进中携带的带电粒子的轨迹离子束，其位于注入平面或工作表面，用于将带电离子放置到制备的工件（例如硅晶片或平板玻璃面板）中; （ii）同时改变和改变行进光束中离子的平行度; 和（iii）同时地，为了控制沿着行进离子束的横向的电流密度的均匀性，不管梁是高方位的，连续的带状离子束还是扫描的带状离子束。

9. 发明授权

US07462843B2 Apparatus and methods for ion beam implantation 有权
标题翻译：用于离子束注入的装置和方法
公开(公告)号：US07462843B2
公开(公告)日：2008-12-09
申请号：US11209484
申请日：2005-08-22
申请人： Jiong Chen , Nicholas R. White
发明人： Jiong Chen , Nicholas R. White
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.
摘要翻译：本发明公开了一种具有多种工作模式的离子注入装置。它具有离子源和用于从其提取带状离子束的离子提取装置。离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。提供多极镜头以控制光束的均匀性和准直。本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

10. 发明授权

US07057192B2 Radial scan arm and collimator for serial processing of semiconductor wafers with ribbon beams 有权
标题翻译：径向扫描臂和准直器，用于带状光束的半导体晶圆的串行处理
公开(公告)号：US07057192B2
公开(公告)日：2006-06-06
申请号：US11049264
申请日：2005-02-02
申请人： Robert E. Kaim , Nicholas R. White
发明人： Robert E. Kaim , Nicholas R. White
IPC分类号： H01J37/20
CPC分类号： H01L21/67069 , H01J37/3171 , H01J2237/20228
摘要： Semiconductor wafers are sequentially mounted on a holder at one end of an arm which is pivoted about its other end. Each wafer is thereby passed on an arcuate path through a parallel-scanned or continuous ribbon-shaped beam for processing. The pivot axis is parallel to the centroid of the beam trajectories. By pre-orienting the wafers before loading, and by providing a second pivot between the arm and the holder, the angle between the beam and the wafer surface may be precisely adjusted to any arbitrary angle of interest. The geometry is such that this angle is constant over the processed area. Uniform processing requires a scanned ribbon beam to have a non-uniform scan velocity and a continuous ribbon beam to have a non-uniform intensity profile. The required non-uniformity is generated by a suitably shaped collimating magnet. When a suitable ribbon beam is unavailable, a beam of approximately circular shape may be used by translating the pivot axis, thereby moving the wafer in a two-dimensional pattern through the beam.
摘要翻译：半导体晶片依次安装在臂的一端处的支架上，该支架围绕其另一端枢转。因此，每个晶片通过平行扫描或连续的带状光束在弧形路径上通过以进行处理。枢转轴线平行于梁轨迹的重心。通过在装载之前预先定向晶片，并且通过在臂和保持器之间提供第二枢轴，梁和晶片表面之间的角度可精确地调节到任何任意的感兴趣的角度。几何形状使得该角度在加工区域上是恒定的。均匀处理需要扫描的带束具有不均匀的扫描速度和连续的带状束以具有不均匀的强度分布。所需的不均匀性由合适形状的准直磁体产生。当适当的带状束不可用时，可以通过平移枢转轴线来使用大致圆形的光束，从而以二维图案通过光束移动晶片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式