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1. 发明授权

US06710512B2 Microelement piezoelectric feedback type picking and releasing device 失效
标题翻译：微量元件压电反馈式拾取和释放装置
公开(公告)号：US06710512B2
公开(公告)日：2004-03-23
申请号：US10175841
申请日：2002-06-21
申请人： Hung-Yin Tsai , Chih-Yung Cheng , Ping-Yin Liu
发明人： Hung-Yin Tsai , Chih-Yung Cheng , Ping-Yin Liu
IPC分类号： H01I4108
CPC分类号： B81C99/002 , B25J7/00 , H01L41/1132
摘要： A microelement piezoelectric feedback type picking and releasing device is constructed to include a piezoelectric material, an IDT (interdigital transducer) electrode plated and a progressive electrode plated on the piezoelectric material, the progressive electrode having a plurality of electrode elements of different sizes arranged in proper order in one direction, the IDT electrode forming a releasing unit by means of surface acoustic wave/ultrasonic wave and serving as a voltage signal feedback sensor for clamping force control.
摘要翻译：微型元件压电反馈型拾取和释放装置被构造成包括压电材料，电镀IDT（叉指式换能器）电极和镀在压电材料上的逐行电极，该渐进电极具有多个布置成适当的不同尺寸的电极元件 IDT电极通过表面声波/超声波形成释放单元，并用作用于夹紧力控制的电压信号反馈传感器。

2. 发明授权

US06972049B2 Method for fabricating a diamond film having low surface roughness 失效
标题翻译：具有低表面粗糙度的金刚石膜的制造方法
公开(公告)号：US06972049B2
公开(公告)日：2005-12-06
申请号：US10635606
申请日：2003-08-07
申请人： Ping-Yin Liu , Chun-Hao Hsieh , Chin-Hon Fan , Hung-Yin Tsai , Chien-Chang Su
发明人： Ping-Yin Liu , Chun-Hao Hsieh , Chin-Hon Fan , Hung-Yin Tsai , Chien-Chang Su
IPC分类号： C30B25/22 , C30B29/04 , C30B25/12
CPC分类号： C30B25/22 , C30B29/04
摘要： A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.
摘要翻译：一种制备具有低表面粗糙度的金刚石膜的方法。提供基板。金刚石层沉积在基底上。粘合剂层涂覆在金刚石层上。提供承载板以与粘合剂层接合，从而形成层压结构。然后去除衬底，从而获得相对于去除的衬底的表面粗糙度具有低表面粗糙度的金刚石膜。

3. 发明申请

US20050126490A1 Substrate temperature control apparatus 审中-公开
标题翻译：基板温度控制装置
公开(公告)号：US20050126490A1
公开(公告)日：2005-06-16
申请号：US10880546
申请日：2004-07-01
申请人： Chun-Hao Hsieh , Chin-Hon Fan , Ping-Yin Liu , Hung-Yin Tsai
发明人： Chun-Hao Hsieh , Chin-Hon Fan , Ping-Yin Liu , Hung-Yin Tsai
IPC分类号： C23C16/458 , C23C16/46 , C23C16/00
CPC分类号： C23C16/4586 , C23C16/46
摘要： A substrate temperature control apparatus adopted for use in plasma diamond coating of a substrate to reduce warping caused by excessive temperature variations includes a holding dock with a temperature sensor, a cooler and a heater installed therein. During the plasma process, if the detected temperature variation is excessive, the cooler or heater is activated to control the temperature of the upper surface and the lower surface of the substrate so that the temperature on two sides are controlled within a selected range to reduce warping.
摘要翻译：采用用于基板的等离子体金刚石涂层的基板温度控制装置，以减少由温度变化过大引起的翘曲，包括安装有温度传感器，冷却器和加热器的保持台。在等离子体处理期间，如果检测到的温度变化过大，则启动冷却器或加热器以控制基板的上表面和下表面的温度，使得两侧的温度被控制在选定范围内以减少翘曲。

4. 发明申请

US20060032447A1 Processing chamber with wave reflector 审中-公开
标题翻译：带反射镜的加工室
公开(公告)号：US20060032447A1
公开(公告)日：2006-02-16
申请号：US11074632
申请日：2005-03-09
申请人： Ping-Yin Liu , Ming-Fong Chen , Hung-Yin Tsai
发明人： Ping-Yin Liu , Ming-Fong Chen , Hung-Yin Tsai
IPC分类号： C23C16/00
CPC分类号： C23C16/274 , C23C16/482 , C23C16/511 , C23C16/52
摘要： The processing chamber comprises an energy wave source and a curved spherical surface, wherein the curved spherical surface of the chamber is composed of at least a Fresnel reflector for reflecting the energy wave discharged from the energy wave source and projecting the same onto a platform as the energy wave source is operating in coordination with the curved spherical surface. In addition, the energy wave source can be a microwave source or a light source. It is noted that the curved spherical surface can be a Fresnel reflector, a wave spherical surface with a portion thereof being replaced by a Fresnel reflector, a curved spherical surface with a portion therof being replaced by at least two Fresnel reflectors, and a surface entirely formed of a plurality of Fresnel reflectors. The processing chamber disclosed in the present invention significantly increases energy density, area, and energy uniformity of the projection region so as to diminish required space of equipment and costs of equipment and manufacture.
摘要翻译：所述处理室包括能量波源和弯曲球形表面，其中所述腔室的弯曲球形表面由至少一个菲涅尔反射器组成，用于反射从能量波源放出的能量波，并将其投射到平台上作为能量波源与曲面球面协调工作。此外，能量波源可以是微波源或光源。要注意的是，弯曲的球面可以是菲涅耳反射器，波面球形表面的一部分被菲涅耳反射器代替，弯曲的球形表面具有由至少两个菲涅尔反射器代替的部分，并且完全表面的表面由多个菲涅耳反射器形成。本发明公开的处理室显着地增加了投影区域的能量密度，面积和能量均匀性，从而减少了设备所需的空间和设备和制造成本。

5. 发明申请

US20050028728A1 Method for fabricating a diamond film having low surface roughness 失效
公开(公告)号：US20050028728A1
公开(公告)日：2005-02-10
申请号：US10635606
申请日：2003-08-07
申请人： Ping-Yin Liu , Chun-Hao Hsieh , Chin-Hon Fan , Hung-Yin Tsai , Chien-Chang Su
发明人： Ping-Yin Liu , Chun-Hao Hsieh , Chin-Hon Fan , Hung-Yin Tsai , Chien-Chang Su
IPC分类号： C30B25/22 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/22 , C30B29/04
摘要： A process for making a diamond film with low surface roughness. A substrate is provided. A diamond layer is deposited on the substrate. A binder layer is coated over the diamond layer. A carrier plate is provided to join with the binder layer, thereby forming a laminate structure. The substrate is then removed, thereby obtaining a diamond film with a low surface roughness with respect to the surface roughness of the removed substrate.

6. 发明申请

US20050170292A1 Structure of imprint mold and method for fabricating the same 有权
标题翻译：压印模具的结构及其制造方法
公开(公告)号：US20050170292A1
公开(公告)日：2005-08-04
申请号：US10770526
申请日：2004-02-04
申请人： Hung-Yin Tsai , Chih-Hung Wu , Chih-Yung Cheng
发明人： Hung-Yin Tsai , Chih-Hung Wu , Chih-Yung Cheng
IPC分类号： B32B9/00 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/30
摘要： The present invention is related to a structure of an imprint mold and a method for fabricating the same, which can be used in the field of nano-imprint lithography. Firstly, a diamond film and a photoresist film are successively formed onto a substrate; wherein the photoresist film is more capable of anticorrosion than the diamond film. Then an energy beam lithography system is provided to make the photoresist film form a photoresist mask with particularly arranged patterns. Because of the etching selectivity between the diamond film and the photoresist film, on the surface of the diamond film can be easily formed a pattern with recessions and protrusions according to the photoresist mask by dry etching method. Thus an imprint mold characterized as better antifriction and easily taking off from imprinted materials is completed.
摘要翻译：本发明涉及压印模具的结构及其制造方法，其可用于纳米压印光刻领域。首先，将金刚石膜和光致抗蚀剂膜依次形成在基板上; 其中光致抗蚀剂膜比金刚石膜更能耐腐蚀。然后提供能量束光刻系统以使光致抗蚀剂膜形成具有特别布置图案的光致抗蚀剂掩模。由于金刚石膜和光致抗蚀剂膜之间的蚀刻选择性，金刚石膜的表面可以通过干式蚀刻方法根据光致抗蚀剂掩模容易地形成具有凹陷和突起的图案。因此，完成了具有更好的抗摩擦性和容易从压印材料脱落的压印模具。

7. 发明授权

US07309515B2 Method for fabricating an imprint mold structure 有权
标题翻译：压印模具结构的制造方法
公开(公告)号：US07309515B2
公开(公告)日：2007-12-18
申请号：US10770526
申请日：2004-02-04
申请人： Hung-Yin Tsai , Chih-Hung Wu , Chih-Yung Cheng
发明人： Hung-Yin Tsai , Chih-Hung Wu , Chih-Yung Cheng
IPC分类号： B05D3/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/30
摘要： The present invention is related to a method for fabricating an imprint mold which can be used in the field of nano-imprint lithography. Firstly, a diamond film and a photoresist film are successively formed onto a substrate; wherein the photoresist film is more capable of anticorrosion than the diamond film. Then an energy beam lithography system is provided to make the photoresist film form a photoresist mask with particularly arranged patterns. Because of the etching selectivity between the diamond film and the photoresist film, on the surface of the diamond film a pattern can be easily formed with recessions and protrusions according to the photoresist mask by dry etching method.
摘要翻译：本发明涉及可用于纳米压印光刻领域的压印模具的制造方法。首先，将金刚石膜和光致抗蚀剂膜依次形成在基板上; 其中光致抗蚀剂膜比金刚石膜更能耐腐蚀。然后提供能量束光刻系统以使光致抗蚀剂膜形成具有特别布置图案的光致抗蚀剂掩模。由于金刚石膜和光致抗蚀剂膜之间的蚀刻选择性，在金刚石膜的表面上，通过干蚀刻方法可以根据光致抗蚀剂掩模容易地形成具有凹陷和突起的图案。

8. 发明申请

US20120007285A1 MOLD MAKING SYSTEM AND MOLD MAKING METHOD 有权
标题翻译：模具制作和模具制作方法
公开(公告)号：US20120007285A1
公开(公告)日：2012-01-12
申请号：US12914240
申请日：2010-10-28
申请人： Hung-Yin Tsai , Tien-Li Chang , Shao-Wei Luo
发明人： Hung-Yin Tsai , Tien-Li Chang , Shao-Wei Luo
IPC分类号： B29C35/08
CPC分类号： G03F7/0017 , B23K26/0006 , B23K26/0624 , B23K26/352 , B23K2103/42 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/70375
摘要： A mold making system for surface patterning of a roller mold is provided. The roller mold includes a transparent hollow roller and a polymer layer disposed at an outer surface of the transparent hollow roller. The mold making system includes a laser generation device, an optical path changing device, and a control device connected to the optical path changing device. The laser generation device is used for generating an ultrafast laser. The optical path changing device is disposed at an inner space of the transparent hollow roller to receive the ultrafast laser. The control device controls the optical path changing device to guide the ultrafast laser to pass through the transparent hollow roller and to be focused at a focus position in the polymer layer.
摘要翻译：提供了一种用于辊模的表面图案化的模具制造系统。辊模具包括透明中空辊和设置在透明中空辊的外表面处的聚合物层。模具制造系统包括激光产生装置，光路改变装置和连接到光路改变装置的控制装置。激光产生装置用于产生超快激光。光路改变装置设置在透明中空辊的内部空间以接收超快激光。控制装置控制光路改变装置以引导超快激光穿过透明中空辊并聚焦在聚合物层中的聚焦位置。

9. 发明授权

US07329364B2 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film 有权
标题翻译：用超薄单晶铁电薄膜制造贴片晶圆的方法
公开(公告)号：US07329364B2
公开(公告)日：2008-02-12
申请号：US10978566
申请日：2004-11-02
申请人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chii-Chang Chen
发明人： Shih-Shian Ho , Hung-Yin Tsai , Chia-Jen Ting , Chun-Fa Lan , Chii-Chang Chen
IPC分类号： B44C1/22
CPC分类号： C30B29/30 , C30B29/32 , C30B33/06
摘要： A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.
摘要翻译：提供一种制造具有超薄单晶铁电体膜的接合晶片的方法，包括以下步骤：在激活单晶铁电晶片和载体晶片的表面的同时提供单晶铁电晶片和载体晶片; 将单晶铁电晶片的活化表面结合到载体晶片的活化表面; 并使用于形成超薄单晶铁电体膜的单晶铁电晶片变薄。其中，上述优选实施方式中的变薄处理是抛光，研磨，化学机械抛光或蚀刻的方法。并且在接合过程中产生的结合力足够强以抵抗剪切力。

10. 发明授权

US06909187B2 Conductive wiring layer structure 有权
标题翻译：导电布线层结构
公开(公告)号：US06909187B2
公开(公告)日：2005-06-21
申请号：US10063630
申请日：2002-05-06
申请人： Yuangtsang Liaw , Hung-Yin Tsai , Kenny Chang
发明人： Yuangtsang Liaw , Hung-Yin Tsai , Kenny Chang
IPC分类号： H01L23/485 , H01L23/48
CPC分类号： H01L24/06 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/49431 , H01L2924/01005 , H01L2924/01009 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/00014 , H01L2924/01046 , H01L2924/00
摘要： A conductive wiring layer structure, applied to the conductive wiring layer structure under bonding pads of a die. The die has a substrate and can be partitioned into a central core circuit and a peripheral bonding pad area. The conductive wire layer structure has a plurality of trapezium conductive wiring regions and a plurality of inverse trapezium conductive wiring regions alternately arranged in the bonding pad area. Each of the equilateral and inverse trapezium conductive wiring regions has a plurality of dielectric layers and a plurality of conductive wiring layers alternately overlaying each other on the substrate. The conductive wiring layers of the trapezium conductive wiring region are wider as approaching the substrate, and become narrower as distant away from the substrate. The conductive wiring layers of the inverse trapezium conductive wiring region are narrower as approaching the substrate, and wider as distant away from the substrate.
摘要翻译：一种导体布线层结构，其被应用于在管芯的接合焊盘下方的导电布线层结构。芯片具有基板，并且可以分为中心芯电路和周边焊盘区域。导线层结构具有多个梯形导电布线区域和交替布置在焊盘区域中的多个反向梯形导电布线区域。每个等边和反向梯形导电布线区域具有多个介电层和多个导电布线层，在基片上彼此交替叠置。梯形导电布线区域的导电布线层越靠近基片越宽，越远离基片越窄。反向梯形导电布线区域的导电布线层越靠近基片越窄，越远离基片。

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