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1. 发明专利

DE1592886A1 未知
公开(公告)号：DE1592886A1
公开(公告)日：1971-09-09
申请号：DE1592886
申请日：1967-09-18
申请人： GEN ELECTRIC CO LTD
发明人： WILLIAM BRANDER ROBET
IPC分类号： C09K11/65 , C30B19/04 , H01L33/34 , C09K1/50
摘要： 1,141,251. Luminescent materials. GENERAL ELECTRIC CO. Ltd. 4 Sept., 1967 [19 Sept., 1966], No. 41812/66. Heading C4S. A luminescent material excited by U.V. radiation, cathode-rays, X-rays or an applied voltage, consists of SiC of N-type conductivity containing impurities including a first element imparting N-type conductivity to the SiC, oxygen and a Group IIIA element imparting P-type conductivity, the atomic proportion of the first element preferably N, P, As, Sb or Bi, being greater than that of the Group III A element. To form a P-N junction, crystals of SiC containing N, O and B are epitaxially deposited on a P-type SiC crystal from a vapour produced by melting Si with B and silica in a graphite crucible in a N 2 atmosphere as described in Specification 1,099,637. Crystals may be grown on an induction heated SiC substrate in a mixture of H 2 ; N 3 ; trichlorosilane; hexane or benzene; diborane; O 2 or H 2 O and an ether or ketone. If powdered material is required, vapour deposition may be on to graphite, W or Mo substrate from which it is removed and ground. Alternatively, the impurities may be introduced into SiC powder by diffusion. The material is used in Hg vapour discharge lamps, C.R.T.'s and X-ray screens, for marking photographic film and as an electroluminescent light source for digital display when contacts of Au-Ta and Au-Ta-Al are provided on the crystal.

2. 发明专利

SE335330B 未知
公开(公告)号：SE335330B
公开(公告)日：1971-05-24
申请号：SE259669
申请日：1969-02-26
申请人： ATOMIC ENERGY COMMISSION
发明人： HEAD E
IPC分类号： C01F17/00 , C09K1/50

3. 发明授权

US3493410A High luster iridescent nacreous pigment 失效
标题翻译：高丽紫外线消毒剂
公开(公告)号：US3493410A
公开(公告)日：1970-02-03
申请号：US3493410D
申请日：1967-06-06
申请人： KOPPERS CO INC
发明人： MORITA YOSHIO , ARMSTRONG JAMES E
IPC分类号： C09C1/00 , C09C1/14 , C09K1/50
CPC分类号： C09C1/0018 , C01P2004/84

4. 发明授权

US3527626A Silicon carbide luminescent materials 失效
标题翻译：硅碳化硅材料
公开(公告)号：US3527626A
公开(公告)日：1970-09-08
申请号：US3527626D
申请日：1967-09-07
申请人： GEN ELECTRIC , ENGLISH ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM
IPC分类号： C09K11/65 , C30B19/04 , H01L33/34 , C09K1/50 , H01L3/00
CPC分类号： H01L33/343 , C09K11/65 , C30B19/04 , C30B29/36 , Y10S148/072 , Y10S148/107 , Y10S148/148 , Y10S252/95
摘要： 1,141,251. Luminescent materials. GENERAL ELECTRIC CO. Ltd. 4 Sept., 1967 [19 Sept., 1966], No. 41812/66. Heading C4S. A luminescent material excited by U.V. radiation, cathode-rays, X-rays or an applied voltage, consists of SiC of N-type conductivity containing impurities including a first element imparting N-type conductivity to the SiC, oxygen and a Group IIIA element imparting P-type conductivity, the atomic proportion of the first element preferably N, P, As, Sb or Bi, being greater than that of the Group III A element. To form a P-N junction, crystals of SiC containing N, O and B are epitaxially deposited on a P-type SiC crystal from a vapour produced by melting Si with B and silica in a graphite crucible in a N 2 atmosphere as described in Specification 1,099,637. Crystals may be grown on an induction heated SiC substrate in a mixture of H 2 ; N 3 ; trichlorosilane; hexane or benzene; diborane; O 2 or H 2 O and an ether or ketone. If powdered material is required, vapour deposition may be on to graphite, W or Mo substrate from which it is removed and ground. Alternatively, the impurities may be introduced into SiC powder by diffusion. The material is used in Hg vapour discharge lamps, C.R.T.'s and X-ray screens, for marking photographic film and as an electroluminescent light source for digital display when contacts of Au-Ta and Au-Ta-Al are provided on the crystal.

5. 发明授权

US3470107A Silicon carbide phosphors 失效
标题翻译：硅碳化硅
公开(公告)号：US3470107A
公开(公告)日：1969-09-30
申请号：US3470107D
申请日：1965-10-15
申请人： GEN ELECTRIC
发明人： ADDAMIANO ARRIGO
IPC分类号： C09K11/65 , C09K1/50
CPC分类号： C09K11/65

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