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1. 发明授权

US3527626A Silicon carbide luminescent materials 失效
标题翻译：硅碳化硅材料
公开(公告)号：US3527626A
公开(公告)日：1970-09-08
申请号：US3527626D
申请日：1967-09-07
申请人： GEN ELECTRIC , ENGLISH ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM
IPC分类号： C09K11/65 , C30B19/04 , H01L33/34 , C09K1/50 , H01L3/00
CPC分类号： H01L33/343 , C09K11/65 , C30B19/04 , C30B29/36 , Y10S148/072 , Y10S148/107 , Y10S148/148 , Y10S252/95
摘要： 1,141,251. Luminescent materials. GENERAL ELECTRIC CO. Ltd. 4 Sept., 1967 [19 Sept., 1966], No. 41812/66. Heading C4S. A luminescent material excited by U.V. radiation, cathode-rays, X-rays or an applied voltage, consists of SiC of N-type conductivity containing impurities including a first element imparting N-type conductivity to the SiC, oxygen and a Group IIIA element imparting P-type conductivity, the atomic proportion of the first element preferably N, P, As, Sb or Bi, being greater than that of the Group III A element. To form a P-N junction, crystals of SiC containing N, O and B are epitaxially deposited on a P-type SiC crystal from a vapour produced by melting Si with B and silica in a graphite crucible in a N 2 atmosphere as described in Specification 1,099,637. Crystals may be grown on an induction heated SiC substrate in a mixture of H 2 ; N 3 ; trichlorosilane; hexane or benzene; diborane; O 2 or H 2 O and an ether or ketone. If powdered material is required, vapour deposition may be on to graphite, W or Mo substrate from which it is removed and ground. Alternatively, the impurities may be introduced into SiC powder by diffusion. The material is used in Hg vapour discharge lamps, C.R.T.'s and X-ray screens, for marking photographic film and as an electroluminescent light source for digital display when contacts of Au-Ta and Au-Ta-Al are provided on the crystal.

2. 发明专利

GB1099637A Improvements in or relating to the manufacture of crystals of semiconductor materials 未知
公开(公告)号：GB1099637A
公开(公告)日：1968-01-17
申请号：GB3189365
申请日：1965-07-26
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM , SUTTON RICHARD PETER , SWALLOW GERALD HERBERT
IPC分类号： C30B19/04 , C30B19/06 , C30B19/08 , C30B19/10 , H01L21/00
摘要： In a process for growing silicon carbide epitaxially, P-type silicon carbide crystals 4 are disposed at an angle to the horizontal in a sealed graphite vessel 1 containing lumps of silicon 6. A temperature difference is maintained between the top and bottom of the vessel by locating it in an eddy current heating coil or passing current through its walls by mounting between electrodes within a graphite shield in a water-cooled container (Fig. 2, not shown). The silicon melts (submerging the substrate crystals) and reacts with the graphite vessel to produce silicon carbide which is slightly soluble in the silicon. The carbide grows epitaxially on the cooler substrate crystals as N-type material due either to excess silicon or nitrogen included in the graphite.

3. 发明专利

GB1031783A Improvements in or relating to methods of growing layers of silicon carbide on silicon carbide substrates 未知
公开(公告)号：GB1031783A
公开(公告)日：1966-06-02
申请号：GB1684863
申请日：1963-04-29
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM
IPC分类号： C04B41/50 , C04B41/87 , C23C14/06 , C23C16/32 , C30B25/02
摘要： A layer of stoichiometric SiC is grown on a SiC substrate by exposing a mass of carbon, heated to at least 1800 DEG C., to an atmosphere containing an inert carrier gas, and elemental Si or a volatile compound of Si, at a vapour pressure of 10-4-10-1 mm. Hg, to give an atmosphere containing Si and C, and exposing the substrate, heated to at least 1500 DEG C., to this atmosphere. Preferably a stream of Si containing gas is passed first over the carbon, e.g. graphite, and then over the substrate. In one method, a graphite tube containing Si in a graphite boat and the substrate, is heated resistively so that the ends are at 500 DEG C., the centre at 2,200 DEG C., the Si at 1500 DEG C. and the substrate at 2000 DEG C. The substrate is a monocrystalline plate, of hexagonal structure, mounted with its main faces (parallel to the 0001 crystal faces) vertical. Argon is passed through at 1 l./min. and entrains Si vapour, which reacts with the graphite to form Si2C, SiC, and SiC2. In a second method, instead of using Si, the argon is passed through a Si compound e.g. SiHCl3 or SiCl4 before entering the tube. The grown layer may be doped by adding to the molten Si or to the gas stream an impurity element or its volatile compound (e.g. halide), e.g. nitrogen (N-type) or BBr3 (P-type); or the impurity may be varied during growth to form PN junctions.

4. 发明专利

GB1141251A Improvements in or relating to luminescent materials 未知
公开(公告)号：GB1141251A
公开(公告)日：1969-01-29
申请号：GB4181266
申请日：1966-09-19
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM
IPC分类号： C09K11/65 , C30B19/04 , H01L33/34
摘要： 1,141,251. Luminescent materials. GENERAL ELECTRIC CO. Ltd. 4 Sept., 1967 [19 Sept., 1966], No. 41812/66. Heading C4S. A luminescent material excited by U.V. radiation, cathode-rays, X-rays or an applied voltage, consists of SiC of N-type conductivity containing impurities including a first element imparting N-type conductivity to the SiC, oxygen and a Group IIIA element imparting P-type conductivity, the atomic proportion of the first element preferably N, P, As, Sb or Bi, being greater than that of the Group III A element. To form a P-N junction, crystals of SiC containing N, O and B are epitaxially deposited on a P-type SiC crystal from a vapour produced by melting Si with B and silica in a graphite crucible in a N 2 atmosphere as described in Specification 1,099,637. Crystals may be grown on an induction heated SiC substrate in a mixture of H 2 ; N 3 ; trichlorosilane; hexane or benzene; diborane; O 2 or H 2 O and an ether or ketone. If powdered material is required, vapour deposition may be on to graphite, W or Mo substrate from which it is removed and ground. Alternatively, the impurities may be introduced into SiC powder by diffusion. The material is used in Hg vapour discharge lamps, C.R.T.'s and X-ray screens, for marking photographic film and as an electroluminescent light source for digital display when contacts of Au-Ta and Au-Ta-Al are provided on the crystal.

5. 发明专利

GB1134681A Improvements in or relating to electric discharge devices 未知
公开(公告)号：GB1134681A
公开(公告)日：1968-11-27
申请号：GB3189465
申请日：1965-07-26
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM , TODKILL ALAN
IPC分类号： H01J1/308
摘要： 1,134,681. Cathode materials and processing; cathode-ray tubes; projection devices. GENERAL ELECTRIC CO. Ltd. 22 Aug., 1966 [26 July, 1965], No. 31894/65. Headings H1D and H1K. In a cold-emitter cathode comprising a body of semi-conductor material having an N-type surface layer 2 overlying a P-type layer 3 to provide a PN junction 4, at least one recess 5 which extends to or through the PN junction is formed in the N-type surface layer 2, so that when a reverse bias voltage is applied across the junction electrons are liberated from the parts of the junction exposed within the recess. The semi-conductor material may be a single planar crystal of silicon carbide doped with aluminium for the P-type layer and with nitrogen for the N-type layer. The recess 5 which may be in the form of a frusto-conical hole or may be a labyrinth may be coated with a work function reducing material such as barium or caesium. The PN junction cathode may be employed in the electron gun of a cathode-ray tube and may have a number of recesses each associated with electrodes of a different gun assembly to produce a number of separate electron beams from the single cathode. The electron beam intensity may be controlled by the voltage across the PN junction. The cathode may also be used in demountable devices. The recess 5 may be formed using an ultrasonic drill and the inside surfaces of the hole polished with an abrasive by inserting a polishing slurry and a rotating metal rod into the hole. The crystal is then cleaned by boiling acid solutions. Further chemical treatment of the crystal to improve its emission properties may include immersion in specific acid solutions, boiling in acid and etching, and oxidation of the crystal surface and subsequent removal of the oxide.

6. 发明专利

GB1234976A IMPROVEMENTS IN OR RELATING TO THE MANUFACTURE OF SEMICONDUCTOR DEVICES 未知
公开(公告)号：GB1234976A
公开(公告)日：1971-06-09
申请号：GB3876068
申请日：1968-08-13
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM , LEWIS DAVID THOMAS
IPC分类号： H01L21/04 , H01L29/24
摘要： 1,234,976. Vacuum deposition. GENERAL ELECTRIC CO. Ltd. Sept.3, 1969 [Aug.13, 1968], No. 38760/68, Heading C7F. [Also in Division H1] An electrical contact is provided on a silicon carbide body by heating it to at least 100‹C. (preferably above 250‹C.) in vacuo, maintaining these conditions while a layer of titanium and an overlayer of a protective metal e.g. silver or gold are deposited and then cooling to room temperature. The contacts may be defined by depositing through a mask or by form-etching a layer deposited overall. In the embodiment silicon carbide wafers are disposed over apertures in a heated steel plate above sources of titanium and silver contained respectively in a molybdenum spiral and a tantalum boat, the wafers having been pre-treated in a mixture of potassium dichromate and phospharic acid, degreased and finally rinsed in hydrofluoric acid. The spiral and boat, separated by a baffle to prevent cross-contamination, are successively heated to deposit the two metals to thicknesses of .1Á and 1Á respectively, a baffle being placed in front of the wafers in the early stages of each evaporation to arrest impurities. Finally tinned copper wires are soldered to the coated areas or gold wires if gold is used as protective metal.

7. 发明专利

GB941880A Improvements in or relating to alloying processes for forming junctions in silicon carbide bodies 未知
公开(公告)号：GB941880A
公开(公告)日：1963-11-13
申请号：GB2978260
申请日：1960-08-29
申请人： GEN ELECTRIC CO LTD
发明人： BRANDER ROBERT WILLIAM
IPC分类号： H01L21/04
摘要： Two alloys used in the manufacture of semiconductor devices (see Division H1) have the following compositions by weight: 80% iron, 10% silicon, 10% aluminium or antimony.

8. 发明专利

GB1176949A Improvements in or relating to Electroluminescent Devices 未知
公开(公告)号：GB1176949A
公开(公告)日：1970-01-07
申请号：GB1709567
申请日：1967-04-13
申请人： GEN ELECTRIC & ENGLISH ELECT
发明人： BRANDER ROBERT WILLIAM , TODKILL ALAN
IPC分类号： H01L29/24 , H01L33/00
摘要： 1,176,949. Electroluminescence. GENERAL ELECTRIC & ENGLISH ELECTRIC COMPANIES Ltd. 28 March, 1968 [13 April, 1967], No. 17095/67. Heading C4S. [Also in Division H1] An electroluminescent device of variable or restricted light-emitting area comprises two regions defining a junction across which chargecarriers can be injected to produce luminescence by the application of a first unidirectional voltage between a first electrode on the first region and a second electrode on the second region. The first region also carries a third electrode, and a second unidirectional voltage, of the same polarity as the first voltage, applied between the third and second electrodes produces a potential distribution in the first region which controls the location and area of the junction across which injection occurs to cause luminescence. The second voltage may be variable, and may be less than the cut-off voltage required to produce luminescence. The first voltage must, in this case, be greater than the cut-off voltage. A particular embodiment comprises a SiC body containing a PN junction, with a Mo electrode (second electrode) brazed to the P region by an Au/Ta/A1 alloy and two spaced Au/Ta/Sb electrodes (first and third electrodes) alloyed to the N region. A PN hetero junction may alternatively be incorporated in the device. In a further form a metal or semi-conductive layer is applied to an electroluminescent phosphor, the emitted light being transmitted either through the face of the former layer or through a part of the edge of the device. The body may be ring-shaped with the first and third electrodes located on opposite ends of a diameter, or may be disc-shaped with a central first (third) electrode and a peripheral annular third (first) electrode. Two or more third electrodes may be provided, carrying either the same or different control voltages.

9. 发明专利

GB1154934A Improvements in or relating to the Surface Treatment of Silicon Carbide Crystals 未知
公开(公告)号：GB1154934A
公开(公告)日：1969-06-11
申请号：GB2730066
申请日：1966-06-17
申请人： GEN ELECTRIC & ENGLISH ELECT
发明人： BRANDER ROBERT WILLIAM
IPC分类号： C25F3/12
摘要： 1,154,934. Electrolytic polishing and etching of silicon carbide crystals; gold alloys. GENERAL ELECTRIC & ENGLISH ELECTRIC COMPANIES Ltd. June 6, 1967 [June 17, 1966], No.27300/66. Headings C7A and C7B. A surface of a crystal of P-type SiC is anodically etched by placing the surface in a horizontal position in contact with an electrolyte consisting of a 0À1 N to 5N aqueous solution of HF wherein part, e.g. up to 50% by volume, of the water is optionally replaced by a weak acid such as acetic acid, and passing a current such that the current density at the crystal surface is 5 to 500 amps. /sq. dm. Electro-polishing may be effected with 1À5N to 4N aqueous HF with a current density of 20 to 350 amps. /sq. dm., the crystal potential relative to an adjacent measuring electrode being 4 to 10 volts. 10% by volume of glacial acetic acid may also be present. N-type SiC crystals may be electro-polished by introducing positive holes into the surface layer e.g. by injection from a forward-biased PN junction or by exposure to U. V. radiation. Delineation of a PN junction in a single crystal of SiC can be effected in an electrolyte suitable for polishing at a current density less than that at which polishing occurs e.g. less than 30 amps/sq. dm. resulting in a thin white or brown on whichever region is connected as anode. Leakage current across a PN junction may be reduced by removing weak points or surface damage adjacent the junction by connecting the P-region as anode, masking the contact to this region and any metal contacts on the N-region from the electrolyte and employing a current density above that which effects polishing. As shown a polythene vessel 1 having a screw-threaded neck 2 supports a threaded recessed polythene holder 3 for a SiC crystal 5 with the crystal surface horizontal and parallel to a noble metal e.g. gold cathode 7. A reference electrode 11 is provided by a gold wire sheathed except at its tip by a polythene tube. By this arrangement irregularities due to convection of the electrolyte are reduced. The viscosity of the electrolyte may be increased by the addition of a water-miscible inert viscous liquid such as glycerine, such addition lowering both current density limits defining the polishing range. The contact to the SiC crystal which contact is insulated from the etching electrolyte may be a pressure contact, an evaporated metal layer, silver paste or an electrolyte contact, or may be formed by a molybdenum disc bonded to the crystal by a gold alloy containing 5% by weight of tantalum or of each of tantalum and aluminium.

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