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    • 5. 发明申请
    • Method to grow self-assembled epitaxial nanowires
    • 生长自组装外延纳米线的方法
    • US20030008505A1
    • 2003-01-09
    • US10008058
    • 2001-11-13
    • Yong ChenR. Stanley WilliamsDouglas A. A. Ohlberg
    • H01L021/302B32B009/06B32B003/00B32B007/00H01L021/461B32B015/00B32B015/04
    • C30B23/02C30B25/02C30B29/605Y10S977/763Y10T428/12674Y10T428/24802Y10T428/24917Y10T428/24942Y10T428/249921
    • Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other. The nanowires are grown by first selecting the appropriate combination of materials that fulfill the foregoing criteria. The surface of the substrate on which the nanowires are to be formed must be cleaned in order (1) to ensure that the surface has an atomically flat, regular atomic structure on terraces and regular steps and (2) to remove impurities. Finally, epitaxial deposition of the first crystalline material on the cleaned surface is performed, thereby forming the self-assembled nanowires. Thus, one-dimensional epitaxial crystals are obtained with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality.
    • 提供了自组装的纳米线,其包括在第二结晶组合物的基底上形成的第一晶体组合物的纳米线。 两种结晶材料的特征在于不对称晶格失配,其中在两种材料之间的界面中,第一种材料与第二种材料具有紧密的晶格匹配(在任何方向上),并且在所有其它主要材料中具有大的晶格失配 晶体方向与第二种材料。 这允许外延晶体在第一方向上的不受限制的生长,但是限制另一方的宽度。 通过首先选择满足上述标准的材料的适当组合来生长纳米线。 要在其上形成纳米线的基板的表面必须按顺序(1)清洁,以确保表面在梯田和规则台阶上具有原子平坦的规则原子结构,和(2)去除杂质。 最后,执行第一结晶材料在清洁表面上的外延沉积,从而形成自组装的纳米线。 因此,以纳米级的宽度和高度获得一维外延晶体,并且以一定的晶体方向对准具有高晶体质量的微米尺度的长度。
    • 8. 发明申请
    • Plated substrate for hard disk medium and manufacturing method thereof
    • 用于硬盘介质的镀覆基片及其制造方法
    • US20040035822A1
    • 2004-02-26
    • US10646500
    • 2003-08-22
    • Toshihiro TsumoriMasatoshi IshiiNaofumi ShinyaYu HamaguchiYukimi Jyoko
    • B32B009/06
    • G11B5/7315G11B5/8404Y10T428/12847Y10T428/12854Y10T428/12931
    • In plating on an Si substrate, it has been strongly demanded to apply a treatment for providing an excellent adhesion so as to resist a post-processing such as polishing and for facilitating plating. Then, provided is a plated substrate adapted for hard disk medium comprising an Si single crystal; an amorphous layer on the substrate, the amorphous layer having thickness of 2 to 200 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag; a multicrystal layer on the amorphous layer, the multicrystal layer having thickness of 5 to 1000 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag. Moreover, provided is a method for manufacturing a plated substrate adapted for hard disk medium comprising steps of applying a chemical etching treatment of a natural oxide film and a surface Si portion on an Si single crystal substrate; and forming a film on the etched surface of the substrate in a sulfate or hydrochloride bath containing no reductant within a pH range of 7.2 to 12.8 at liquid temperature of 70 to 100null C.
    • 在Si衬底上的电镀中,强烈要求施加用于提供优异的粘附性的处理,以便抵抗诸如抛光的后处理和便于电镀。 然后,提供适于包含Si单晶的硬盘介质的电镀基板; 在所述基板上的非晶层,所述非晶层的厚度为2〜200nm,并且含有Si和选自Ni,Cu和Ag中的一种以上的金属; 在所述非晶层上的多晶层,所述多晶层的厚度为5〜1000nm,并含有Si和选自Ni,Cu和Ag中的一种以上的金属。 此外,提供一种适用于硬盘介质的电镀基板的制造方法,包括以下步骤:在Si单晶基板上施加天然氧化膜和表面Si部分的化学蚀刻处理; 并在70至100℃的液体温度下,在7.2至12.8的pH范围内,在不含还原剂的硫酸盐或盐酸浴中,在基板的蚀刻表面上形成薄膜。
    • 9. 发明申请
    • Method for the manufacture of electromagnetic radiation reflecting devices
    • 制造电磁辐射反射装置的方法
    • US20030129423A1
    • 2003-07-10
    • US10295767
    • 2002-11-14
    • Ubaldo MastromatteoPietro CoronaFlavio VillaGabriele Barlocchi
    • B44C001/22B32B009/06
    • G11B7/1362G02B5/08G02B6/4214G11B7/123Y10T428/12528
    • Method for manufacturing electromagnetic radiation reflecting devices, said method comprising the steps of: a) providing a silicon substrate defined by at least one first free surface, b) forming on said first surface a layer of protective material provided with an opening which exposes a region of the first free surface, and c)etching the region of the free surface by means of an anisotropic agent to remove at least one portion of the substrate and define a second free surface of the substrate inclined in relation to said first surface. Furthermore, said first free surface is parallel to the crystalline planes null110null of silicon substrate and said step (c) comprises a progressing step of the anisotropic agent such that the second free surface resulting from the etching step is parallel to the planes null100null of said substrate.
    • 用于制造电磁辐射反射装置的方法,所述方法包括以下步骤:a)提供由至少一个第一自由表面限定的硅衬底,b)在所述第一表面上形成一层保护材料,所述保护材料层具有暴露区域 的第一自由表面,以及c)借助于各向异性剂蚀刻所述自由表面的区域以去除所述衬底的至少一部分并且限定所述衬底相对于所述第一表面倾斜的第二自由表面。 此外,所述第一自由表面平行于硅衬底的晶面{110},并且所述步骤(c)包括各向异性剂的进行步骤,使得由蚀刻步骤产生的第二自由表面平行于平面{100 }。
    • 10. 发明申请
    • Methods for producing pattern-forming body
    • 产生图案形成体的方法
    • US20030087073A1
    • 2003-05-08
    • US10272096
    • 2002-10-16
    • Hironori Kobayashi
    • B05D003/02B32B003/00B32B009/06
    • B82Y30/00Y10T428/24802Y10T428/24917Y10T428/31663
    • A method of producing a pattern-forming body with high accuracy with no need for a post-exposure treatment and without allowing any photocatalyst to remain in the resultant pattern-forming body and whereby any problematic effect of the photocatalyst in the pattern-forming body is eliminated. The method includes providing a photocatalyst-containing layer-sided substrate and a pattern-forming body substrate having a characteristic-changeable layer, which is changed by the effect of the photocatalyst in the photocatalyst-containing layer, and a light-shading part formed as a pattern in such a manner that the photocatalyst-containing layer and the characteristic-changeable layer are brought into contact with each other, followed by exposure on the side of the pattern-forming body substrate to change the characteristics of the characteristic-changeable layer of the exposed part, followed by removing the photocatalyst-containing layer-sided substrate.
    • 一种以高精度制造图案形成体的方法,不需要后曝光处理,并且不使任何光催化剂残留在所得图案形成体中,并且光催化剂在图案形成体中的任何问题的影响是 消除了 该方法包括提供含有光催化剂的层侧基板和具有特征变化层的图案形成体基板,其通过光催化剂层中的光催化剂的作用而改变,以及遮光部分形成为 使含有光催化剂的层和特征可变层彼此接触的图案,然后在图案形成体基板的侧面曝光以改变特征可变层的特性 曝光部分,然后除去含有光催化剂的层侧基板。