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    • 8. 发明授权
    • Ultra-thin MO-C film transistor
    • 超薄MO-C薄膜晶体管
    • US5883419A
    • 1999-03-16
    • US850013
    • 1997-05-01
    • Seong-Jae LeeKyoung-Wan ParkMin-Cheol Shin
    • Seong-Jae LeeKyoung-Wan ParkMin-Cheol Shin
    • H01L41/00H01L45/00B02J17/40B05D3/06
    • H01L45/00
    • A transistor in accordance with the invention comprises an ultra-thin Mo--C film functioning as a channel for an electron flow with two ends of the thin metal film functioning as source and drain terminals of the transistor, respectively; a piezoelectric film formed on the Mo--C film, for producing a force in accordance with an applied electric field provided by a gate voltage; and an electrode film formed on the piezoelectric film functioning as a gate of the transistor to which the gate voltage is applied to produce the applied electric field; and wherein a resistance of the Mo--C film between the source and drain terminals changes in accordance with the force produced in response to the applied gate voltage. This transistor can be used as an element of the three dimensional integrated circuit with a laminated structure.
    • 根据本发明的晶体管包括用作电子流的通道的超薄Mo-C膜,其中薄金属膜的两端分别用作晶体管的源极和漏极端子; 形成在Mo-C膜上的压电膜,用于根据由栅极电压提供的施加的电场产生力; 以及形成在作为施加栅极电压的晶体管的栅极的压电膜上产生施加的电场的电极膜; 并且其中源极和漏极端子之间的Mo-C膜的电阻根据施加的栅极电压产生的力而改变。 该晶体管可以用作具有层叠结构的三维集成电路的元件。