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    • 5. 发明授权
    • Single-electron memory device using an electron-hole coulomb blockade
    • 使用电子孔库仑封锁的单电子存储器件
    • US06323504B1
    • 2001-11-27
    • US09495740
    • 2000-02-01
    • Min Cheol ShinSeong Jae LeeKyoung Wan Park
    • Min Cheol ShinSeong Jae LeeKyoung Wan Park
    • H01L2906
    • B82Y10/00G11C2216/08H01L29/7888Y10S977/937
    • A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied
    • 提供了使用电子孔库仑封锁的单电子存储器件。 根据本发明的实施例的单电子存储器件包括多个量子点隧道结阵列,栅电极和源电极和漏电极。 多个量子点隧道结阵列包括至少两个隧道结,它们彼此平行地耦合,并且彼此相互分离以防止它们之间的单电子隧穿。 多个量子点隧道结阵列中的一个包括栅电极,并且施加到栅电极的电压可以改变电子 - 空穴对的数量。 上述多个量子点隧道结阵列中的每一个包括分别施加电压的源极和漏极