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1. 发明专利

JPH09110576A GROWTH OF CRYSTAL 失效
公开(公告)号：JPH09110576A
公开(公告)日：1997-04-28
申请号：JP30781195
申请日：1995-11-27
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO , KODAMA SHIGEO , SUZUKI TAKASHI
IPC分类号： C30B11/00 , C30B11/14 , C30B13/00 , C30B13/34 , C30B29/40
摘要： PROBLEM TO BE SOLVED: To provide a method for crystal growth such as temperature gradient growing or zone growing method, intended to grow >=3-component compound crystal without the need of using three or more kinds of compound materials. SOLUTION: A 1st material 3 lower in melting point than a seed crystal 2 and a 2nd material 4 higher in melting point than the 1st material 3 are arranged adjacently to the seed crystal 2 alternately in one layer or plural layers, and these are collecttively put into a vessel 1, which is, in turn, put under a heating atmosphere, thereby growing a crystal 2a on the surface of the seed crystal 2a by use of the respective constituent elements of both the 1st and 2nd materials 3, 4 as starting materials.

2. 发明专利

JPH08143389A CRYSTAL GROWTH METHOD 失效
公开(公告)号：JPH08143389A
公开(公告)日：1996-06-04
申请号：JP3091795
申请日：1995-02-20
申请人： FUJITSU LTD
发明人： NAKAJIMA KAZUO , SUZUKI TAKASHI , KUSUKI TOSHIHIRO
IPC分类号： C30B13/08 , C30B27/00 , C30B29/40 , C30B29/48 , C30B29/52 , H01L21/208
摘要： PURPOSE: To make the composition uniform by regrowth and to obtain a multi- element bulk crystal by forming a melt in phase equilibrium with the raw crystal of a multi-element crystal by zone melting. CONSTITUTION: A first material 1 having the same composition as a multi- element crystal to be grown, a second material 2 contg. at least a part of the components of crystal to be grown and having a lower m.p. than a material having a melt composition in phase equilibrium close to the growth temp. of the crystal to be grown and a seed crystal 3 contg. at least a part of the components of crystal to be grown are brought into contact with one another in this order and arranged in a growth vessel 4. The second material 2 is heated above its m.p., melted in a growth furnace having a high-temp. part and the following temp. gradient part and held at the temp. of the melt in phase equilibrium with the first material 1 to gradually move the molten part of the second material 2 toward the first material 1, and a multi-element crystal is grown.

3. 发明专利

JPH0585877A APPARATUS FOR PRODUCING SEMICONDUCTOR 失效
公开(公告)号：JPH0585877A
公开(公告)日：1993-04-06
申请号：JP24927591
申请日：1991-09-27
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO , KITAHARA KUNINORI
IPC分类号： C30B15/02 , C30B29/40
摘要： PURPOSE:To provide an apparatus for producing a semiconductor capable of intermittently supplying a solute exhausted with growth of a compound semiconductor crystal in the apparatus for growing the compound semiconductor crystal and producing the semiconductor. CONSTITUTION:An apparatus for producing a semiconductor is constructed as follows. A pulling up shaft 4 for pulling up a crystal is installed in the central part of a crucible 2 made of carbon or PBN. A rod 6 is installed in the peripheral part of the crucible 2 and a source holder 8 lifted and lowered by the rod 6 is attached to the lower end of the rod 6. The source holder 8 is made of carbon and slitlike openings 10 are formed in its base part. A plate 12 made of graphite, quartz or tungsten which is a material, unreactive with the melt and excellent in wettability is installed along the inner wall of the crucible 2.

4. 发明专利

JPH03261695A PULL SYSTEM FOR CRYSTAL 失效
公开(公告)号：JPH03261695A
公开(公告)日：1991-11-21
申请号：JP5890190
申请日：1990-03-09
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO
IPC分类号： C30B15/32 , H01L21/208
摘要： PURPOSE:To provide the title system so designed that each specific constitution is used in the main body and upper part of a seed crystal holder to prevent abnormal crystal growth from the side of a seed crystal, thereby controlling crystal growth in high accuracy by assuredly confirming the mutual contact of the seed crystal and a melt in growth initiation. CONSTITUTION:The objective system equipped with a seed crystal holder 1 having the following A or B constitution: (A) (1) a recess 3 into which a seed crystal 2 is embedded when it is inserted through the lower part and (2) an insulation film 4 formed on the entire lower surface; (B) (3) a tapered surface 6 projected downward on the lower surface and (4) a recess 3 similar to that mentioned above.

5. 发明专利

JPH03261133A GROWTH METHOD FOR COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH03261133A
公开(公告)日：1991-11-21
申请号：JP5787590
申请日：1990-03-12
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO
IPC分类号： H01L21/208
摘要： PURPOSE:To grow a compound semiconductor of uniform composition by supplying a binary or more compound semiconductor source in the shapes of a plurality of rods form outside a container so as to perform the elution of a semiconductor into compound semiconductor solution. CONSTITUTION:When providing specified binary or more compound semiconductor sources 7 and 8, andglowing a compound semiconductor on a substrate 6 while eluting each semiconductor from sources 7 and 8 into compound semiconductor solution 1, the elution of the semiconductors from the binary or more compound semiconductor sources 7 and 8 into the solution 1 is done by supplying the binary or more compound semiconductor sources 7 and 8 in the shapes of a plurality of rods from outside a container 5. That is, the binary or more compound semiconductors 7 and 8 in the shapes of a plurality of rods, preferably, in the shapes of the rods having small diameters are sent out in order into ternary solution so as to dissolve the parts projecting into the solution completely. Hereby, the generation of the change of the composition of the ternary solution can be prevented, and the ternary compound semiconductor of the specified uniform composition can be grown.

6. 发明专利

JPS62213190A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPS62213190A
公开(公告)日：1987-09-19
申请号：JP5540686
申请日：1986-03-13
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO
IPC分类号： H01L21/308 , H01L21/306 , H01S5/00
摘要： PURPOSE:To enable the single peaking of the transverse mode of outgoing beams by approximately making the side end surface of an active layer perpen dicular to a hetero-interface in an indium phosphite based semiconductor laser in which a light-emitting section is formed in a means structure and a III-V mixed crystal layer mainly comprising In and P is used as the active layer. CONSTITUTION:A first InP layer 2, an active layer 3 mainly comprising In and P and a second InP layer 4 are laminated on a substrate 1 in succession, and sections up to at least the first InP layer 2 from the second InP layer 4 are etched to form a band-shaped mesa structure 6. The active laye 3 is side-etched by an etchant having an etching rate larger than the first and second InP layers 2, 4 to the active layer 3 shaped to a band form and approximately making the etching surface of said active layer 3 perpendicular to the first and second InP 2, 4 layers, thus forming a light-emitting section. Accordingly, the side end surface of the active layer in the light-emitting section is made perpendicular to a hetero-interface, thus effectively working an optical confinement effect in the transverse direction, the allowing the single peaking of the transverse mode of outgoing beams.

7. 发明专利

JPS61187390A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS61187390A
公开(公告)日：1986-08-21
申请号：JP2782285
申请日：1985-02-15
申请人： FUJITSU LTD
发明人： KUSUKI TOSHIHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce the area of an active layer except a light emitting region by providing two mesas of wide width outside a groove in addition to a mesa of the light emitting region. CONSTITUTION:A mesa having a light emitting region 2A and two mesas 10, 11 of wide width at both sides of the region 2A are formed in a 3-layer structure having an N-type clad layer 1, an active layer 2 and a P-type clad layer 3. The layer 2 except the portions of the mesas is removed. Further, the second P-type clad layer 7, the second N-type clad layer 8 and the third clad layer 9 are formed in buried layers. The layer 8 for limiting a current is not grown on the mesa having the region 2A, and growing conditions are selected and formed in the region except it. With the thus construction, the storage of carrier is reduced in the active layer except the light emitting region to enable to respond at a high speed.

8. 发明专利

JPS61139084A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61139084A
公开(公告)日：1986-06-26
申请号：JP26232784
申请日：1984-12-11
申请人： Fujitsu Ltd
发明人： KUSUKI TOSHIHIRO
IPC分类号： H01L21/306 , H01L21/308 , H01L33/14 , H01L33/16 , H01L33/30 , H01S5/00
摘要： PURPOSE: To form a laser element without adding a photoetching process, and to improve the reliability of the element by growing a second mask on the surface in a liquid-phase epitaxial manner and in a self-alignment manner and shaping a groove section through etching by utilizing the mask.
CONSTITUTION: The guard layers of a p-InP layer 5 and an n-InP layer 6 are formed through liquid-phase epitaxial growth while using an SiO
2 film 10 as a mask, an etching section is buried, and InGaAsP films 11 are grown on the etching section in a liquid-phase epitaxial manner. The InGaAsP films 11 are grown only in the lower section of the n-InP layer 6 in a self-alignment manner in the lateral direction. When the exposed n-InP layer 6 is etched while employing the SiO
2 film 10 and the InGaAsP films 11 as masks, grooves 12 are shaped. The SiO
2 film 10 is removed, a novel SiO
2 film 13 is applied and a device is insulated, and electrodes 18, 19 are shaped, thus completing a semiconductor laser. According to such a forming method, the masks of the InGaAsP films 11 for shaping the grooves are formed without adding a photoetching process, and the grooves 12 for insulating a protective layer can be etched.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：在不添加光刻工艺的情况下形成激光元件，并通过以液相外延方式和自对准方式在表面上生长第二掩模并且通过蚀刻成形沟槽部分来提高元件的可靠性通过利用掩模。构成：使用SiO 2膜10作为掩模，通过液相外延生长形成p-InP层5和n-InP层6的保护层，掩埋蚀刻部分，并且将InGaAsP膜11生长在蚀刻部分以液相外延方式。 InGaAsP膜11仅在n-InP层6的下部以横向的自对准方式生长。当使用SiO 2膜10和InGaAsP膜11作为掩模来蚀刻曝光的n-InP层6时，形成凹槽12。除去SiO 2膜10，施加新的SiO 2膜13并且将器件绝缘，并且电极18,19成形，从而完成半导体激光器。根据这种形成方法，在不添加光刻工艺的情况下，形成用于成形凹槽的InGaAsP膜11的掩模，并且可以蚀刻用于绝缘保护层的凹槽12。

9. 发明专利

JPS6146018A Liquid growthing method 失效
标题翻译：液体生长方法
公开(公告)号：JPS6146018A
公开(公告)日：1986-03-06
申请号：JP16817684
申请日：1984-08-11
申请人： Fujitsu Ltd
发明人： KUSUKI TOSHIHIRO
IPC分类号： H01L21/205 , H01L21/208 , H01L33/16 , H01L33/30 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02543
摘要： PURPOSE:To prevent pin-hole defects from occuring in a growth layer, by protecting the liquid growth surface of a substrate with the plane orientatin (100) face of indium phosphite, till the substrate is contacted to solution for liquid growthing. CONSTITUTION:Till a solution containing block 3 is moved to contact the solution 4 with a substrate 1, the block 3 is positioned so that a protecting plate 10 covers the substrate 1. The protecting plate 10 is InP crystal plate with a surface of plane orientation (100). When liquid growth is done on the substrate 1 which has a surface layer of indium gallium phosphide formed by epitaxial growing on a gallium arsenide substrate having a surface of plane orientation (100), it can be prevented that pin-hole defects may be occurred in the growth layer.
摘要翻译：目的：为了防止针孔缺陷发生在生长层中，通过用磷酸亚铟的平面取向（100）面保护底物的液体生长表面，直到底物与液体生长溶液接触。构成：将含有块3的溶液移动以与基板1接触溶液4，将块3定位成使得保护板10覆盖基板1.保护板10是具有平面取向表面的InP晶体板（100）。当在具有通过在具有平面取向（100）表面的砷化镓衬底上外延生长形成的具有铟镓磷化物的表面层的衬底1上进行液体生长时，可以防止发生针孔缺陷生长层。

10. 发明专利

JPS5957989A Liquid phase epitaxial growing method 失效
标题翻译：液相外延生长方法
公开(公告)号：JPS5957989A
公开(公告)日：1984-04-03
申请号：JP16894082
申请日：1982-09-28
申请人： Fujitsu Ltd
发明人： KUSUKI TOSHIHIRO , ISOZUMI SHIYOUJI , USHIJIMA ICHIROU
IPC分类号： C30B19/00 , C30B19/06 , C30B29/40 , H01L21/208
CPC分类号： C30B19/063
摘要： PURPOSE:To form an epitaxial layer free from pits, by placing an absorber for absorbing a volatile component having high vapor pressure in a melt for growth between a semiconductor substrate to be treated and the melt to absorb the element having high vapor pressure by the absober. CONSTITUTION:A melt holding block 4 contg. a melt 14 for growth is slidably mounted on a substrate block 3 having a mounted semiconductor substrate 10 to be treated. An absorber 15 for absorbing an element having high vapor pressure in the melt 14 is placed between the substrate 10 and the melt 14. The element having high vapor pressure evaporated from the heated melt 14 is absorbed in the absorber 15, and an epitaxial layer free from pits is formed.
摘要翻译：目的：为了形成没有凹坑的外延层，通过在用于在要处理的半导体衬底和熔体之间生长的熔体中放置用于吸收具有高蒸气压的挥发性组分的吸收体，以通过吸收体吸收具有高蒸汽压的元素。构成：熔体保持块4，用于生长的熔体14可滑动地安装在具有待处理的半导体衬底10的衬底块3上。用于吸收熔体14中具有高蒸汽压的元件的吸收器15被放置在基底10和熔体14之间。从加热的熔体14蒸发的具有高蒸气压的元件被吸收在吸收体15中，并且外延层不含从坑形成。

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