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    • 5. 发明申请
    • SWITCHING DEVICE FOR A HIGH VOLTAGE POWER SYSTEM AND AN ARRANGEMENT COMPRISING SUCH A SWITCHING DEVICE
    • 用于高压电力系统的开关装置以及包括这种开关装置的装置
    • WO2017137057A1
    • 2017-08-17
    • PCT/EP2016/052595
    • 2016-02-08
    • ABB SCHWEIZ AG
    • RAHIMO, MunafHENCKEN, KaiDIJKHUIZEN, FransABPLANALP, Markus
    • H02M1/088H02H7/12
    • H03K17/54H02M1/088H03K17/10H03K17/52H03K17/56
    • The invention concerns a switching device (24) for a high voltage power system and an arrangement comprising such a switching device. The switching device comprises a first semiconductor switching element (26) capable of being turned off and having a first gate (G1) and a first and a second current conduction terminal (CCT1, CCT2) and a second switching element (26) capable of being turned on and comprising an electron tube with a second gate (G2) and a first and second electrode (E1, E2). The switching elements (26, 28) are series-connected with the first electrode (E1) connected to the second current conduction terminal (CCT2) with the first current conduction terminal (CCT1) and the second electrode (E2) providing connections to the power system and the switching elements being jointly operable for breaking or making a current path between the second electrode (E2) and the first current conduction terminal (CCT1).
    • 本发明涉及用于高压电力系统的开关装置(24)以及包括这种开关装置的装置。 该开关装置包括能够被关断并且具有第一栅极(G1)以及第一和第二电流传导端子(CCT1,CCT2)的第一半导体开关元件(26)以及第二开关元件(26) 导通并包括具有第二栅极(G2)和第一和第二电极(E1,E2)的电子管。 开关元件(26,28)与连接到第二电流传导端子(CCT2)的第一电极(E1)串联连接,其中第一电流传导端子(CCT1)和第二电极(E2)提供电力 系统和开关元件可共同操作以断开或形成第二电极(E2)和第一电流传导端子(CCT1)之间的电流路径。
    • 8. 发明公开
    • 반도체 장치 및 그 구동 방법
    • 半导体器件及其驱动方法
    • KR1020120117667A
    • 2012-10-24
    • KR1020120038161
    • 2012-04-12
    • 가부시키가이샤 한도오따이 에네루기 켄큐쇼
    • 고바야시히데토모
    • G11C5/14
    • H03K3/012H01L27/1225H01L29/7869H03K17/54
    • PURPOSE: A semiconductor device and a driving method thereof are provided to reduce a circuit area by overlapping a layer with a flip flop, a power supply control circuit, and a memory cell. CONSTITUTION: A power supply control circuit(10) includes first to fourth transistors. A signal processing circuit(20) includes an input terminal and an output terminal. One of a source and a drain of a second transistor is electrically connected to an input terminal and one of a source and a drain of a fourth transistor. A gate of a third transistor is electrically connected to an output terminal and a gate of the fourth transistor. One of the second transistor and the fourth transistor has a channel formed in an oxide semiconductor layer.
    • 目的:提供一种半导体器件及其驱动方法,以通过与触发器,电源控制电路和存储单元重叠层来减小电路面积。 构成:电源控制电路(10)包括第一至第四晶体管。 信号处理电路(20)包括输入端子和输出端子。 第二晶体管的源极和漏极之一电连接到第四晶体管的输入端和源极和漏极之一。 第三晶体管的栅极电连接到第四晶体管的输出端和栅极。 第二晶体管和第四晶体管中的一个具有形成在氧化物半导体层中的沟道。
    • 10. 发明授权
    • Pulse modulator gating circuit with trailing edge control
    • 具有后沿控制的脉冲调制器门控电路
    • US4002932A
    • 1977-01-11
    • US620478
    • 1975-10-02
    • Harold Zaslav
    • Harold Zaslav
    • H03K3/16H03K17/04H03K17/54H03K17/00
    • H03K17/04H03K17/54H03K3/16
    • Herein disclosed is a new and improved pulse modulator comprisng first current gating means for applying a current through a first primary lead of a current transformer during the duration of an applied control signal pulse and second current gating means for applying an oppositely directed current through a second primary lead of the transformer. The current flow through the second primary lead commences at the trailing edge of the control signal pulse and produces a flux which cancels the flux produced by the current through the first primary lead; whereby a high voltage output pulse is produced across the secondary winding of the transformer which accurately reproduces the duration of the applied low voltage control signal pulse.
    • 本文公开了一种新的和改进的脉冲调制器,其包括用于在施加的控制信号脉冲的持续时间期间施加电流通过电流互感器的第一初级引线的电流门控装置,以及用于施加相对定向的电流通过第二电流的第二电流门控装置 变压器的主引线。 通过第二主引线的电流在控制信号脉冲的后沿开始,并产生消除由通过第一主引线的电流产生的磁通的磁通; 由此在变压器的次级绕组上产生高电压输出脉冲,其精确地再现所施加的低电压控制信号脉冲的持续时间。