基本信息:
- 专利标题： RESONANT BODY TRANSISTOR AND OSCILLATOR
- 专利标题（中）：响应体晶体管和振荡器
- 申请号：EP08859214.2 申请日：2008-12-11
- 公开(公告)号：EP2229723A1 公开(公告)日：2010-09-22
- 发明人： WEINSTEIN, Dana , BHAVE, Sunil A.
- 申请人： Cornell University
- 申请人地址： Cornell Center For Technology Enterprise And Commercialization (CCTEC) 395 Pine Tree Road Suite 310 Ithaca, NY 14850 US
- 专利权人： Cornell University
- 当前专利权人： Cornell University
- 当前专利权人地址： Cornell Center For Technology Enterprise And Commercialization (CCTEC) 395 Pine Tree Road Suite 310 Ithaca, NY 14850 US
- 代理机构： Lippert, Stachow & Partner
- 优先权： US12821P 20071211
- 国际公布： WO2009076534 20090618
- 主分类号： H03B5/12
- IPC分类号： H03B5/12 ; H01L21/336 ; H01L29/78
摘要：
A resonator body has an inversion gate, an accumulation gate, and a center region. The resonator body also has a source contact coupled to the center region and a drain contact coupled to the center region. The resonator body further has a first dielectric layer coupled between the inversion gate and the center region. The resonator body also has a second dielectric layer coupled between the accumulation gate and the center region. A resonant body transistor is also disclosed. The resonant body transistor has an inversion gate electrode, an accumulation gate electrode, a source electrode, a drain electrode, and a plurality of anchor beams. The resonant body transistor also has a resonator body coupled-to and suspended-from the inversion gate electrode, the accumulation gate electrode, the source electrode, and the drain electrode by the plurality of anchor beams. A resonant body oscillator is also disclosed.
IPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03B | 使用工作于非开关状态的有源元件电路，直接或经频率变换产生振荡；由这样的电路产生噪声 |
| ------H03B5/00 | 利用由输出至输入有正反馈的放大器产生振荡 |
| --------H03B5/02 | .零部件 |
| ----------H03B5/12 | ..放大器的有源元件为半导体器件 |