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    • 4. 发明申请
    • FILTERED ASE SWEPT SOURCE FOR OCT MEDICAL IMAGING
    • 经过滤的ASE用于OCT医学影像的扫描源
    • WO2011028999A3
    • 2011-08-18
    • PCT/US2010047813
    • 2010-09-03
    • AXSUN TECH INCFLANDERS DALE CATIA WALID AKUZNETSOV MARK E
    • FLANDERS DALE CATIA WALID AKUZNETSOV MARK E
    • G01N21/47A61B3/12A61B5/00G01J3/26H01S5/14
    • F21V9/00G01B9/02004G01B9/02091H01S5/005H01S5/0064H01S5/0078H01S5/02216H01S5/02248H01S5/02284H01S5/5018H01S5/5036H01S5/5063H01S2301/02
    • An integrated swept wavelength optical source uses a narrowband filtered broadband signal, such as a filtered amplified spontaneous emission (ASE) signal, with an optical amplifier and tracking filter and/or self-tracking filter. This source comprises a micro optical bench, a source for generating broadband light, a first tunable Fabry Perot filter, installed on the bench, for spectrally filtering the broadband light from the broadband source to generate a narrowband tunable signal, an amplifier, installed on the bench, for amplifying the tunable signal, and possibly a second tunable Fabry Perot filter, installed on the bench, for spectrally filtering the amplified tunable signal from the amplifier. In a self-tracking arrangement, a single tunable filter both generates the narrowband signal and spectrally filters the amplified signal. In some examples, two-stage amplification is provided. The use of a single bench implementation yields a low cost high performance system.
    • 集成的扫描波长光源使用窄带滤波的宽带信号,例如滤波放大的自发发射(ASE)信号,以及光放大器和跟踪滤波器和/或自跟踪滤波器。 该光源包括一个微型光学平台,一个用于产生宽带光的光源,一个安装在工作台上的第一个可调谐法布里珀罗滤波器,用于对来自宽带光源的宽带光进行光谱滤波以生成窄带可调谐信号,放大器安装在 用于放大可调谐信号的放大器,以及安装在实验台上的第二个可调谐法布里珀罗滤波器,用于对来自放大器的放大的可调谐信号进行光谱滤波。 在自跟踪装置中,单个可调谐滤波器都会生成窄带信号,并对放大后的信号进行频谱滤波。 在一些例子中,提供了两级放大。 使用单个工作台实现产生一个低成本的高性能系统。
    • 5. 发明申请
    • VARIABLE-GAIN GAIN-CLAMPED OPTICAL AMPLIFIERS
    • 可变增益增益钳位光放大器
    • WO2003021733A1
    • 2003-03-13
    • PCT/GB2002/004061
    • 2002-09-05
    • KAMELIAN LIMITEDMICHIE, Walter, CraigKELLY, Anthony, EdwardTOMLINSON, Andrew, Michael
    • MICHIE, Walter, CraigKELLY, Anthony, EdwardTOMLINSON, Andrew, Michael
    • H01S5/50
    • H01S5/50H01S5/5063H01S5/5081
    • An optical amplifier comprising a signal semiconductor optical amplifier (SOA) (1) and a control SOA (2) in an optical circuit comprising a signal path (4) passing through the signal SOA (1) and a laser cavity containing both the signal SOA (1) and the control SOA (2). The control SOA (2) may be arranged outside the laser cavity so that it does not amplify a signal in the signal path (4). Alternatively, the control SOA (2) is arranged in the signal path (4), but has insignificant gain in the predetermined signal band (3) so that it does not amplify a signal passing along the signal path (4). The laser cavity clamps the total gain of the signal SOA (1) and the control SOA (2). In use, the bias current supplied to the control SOA (2) is varied to control the clamped-gain of the signal SOA (1). Therefore the gain of a signal passing along the signal path (4) is clamped to a level which may be varied by control of the control SOA (2). In an alternative type of embodiment, a similar type of control is achieved in a structure integrated in a single semiconductor chip. In particular a waveguide (56) extends along a signal active layer (52) and a laser cavity arranged perpendicularly to the layered structure of the semiconductor chip contains both the signal active layer (52) and a control active layer (59) which corresponds to the control SOA (2).
    • 一种光放大器,包括信号半导体光放大器(SOA)(1)和控制SOA(2),该光电路包括通过信号SOA(1)的信号路径(4)和包含信号SOA (1)和控制SOA(2)。 控制SOA(2)可以被布置在激光腔外部,使得它不会在信号路径(4)中放大信号。 或者,控制SOA(2)被布置在信号路径(4)中,但在预定信号频带(3)中具有不显着的增益,使得它不放大沿着信号路径(4)的信号。 激光腔夹持信号SOA(1)和控制SOA(2)的总增益。 在使用中,提供给控制SOA(2)的偏置电流是变化的,以控制信号SOA(1)的钳位增益。 因此,沿着信号路径(4)传递的信号的增益被钳位到可以通过控制SOA(2)的控制来改变的水平。 在另一种类型的实施例中,在集成在单个半导体芯片中的结构中实现了类似类型的控制。 特别地,波导(56)沿着信号有源层(52)延伸,并且垂直于半导体芯片的分层结构布置的激光腔包含信号有源层(52)和控制有源层(59),对应于 控制SOA(2)。
    • 6. 发明申请
    • 光信号増幅装置
    • 光信号放大器件
    • WO2009022623A1
    • 2009-02-19
    • PCT/JP2008/064214
    • 2008-08-07
    • オプトトライオード株式会社タツタ電線株式会社前田 佳伸高木 正和
    • 前田 佳伸高木 正和
    • H01S5/50
    • H01S5/50G02B6/4204H01S5/068H01S5/5063H01S5/5072
    •  周囲光をフィードバックさせることにより半導体光増幅器の負帰還光増幅を行う光信号増幅装置において、半導体光増幅器とそれからの出力光を伝送する光ファイバとの結合構造をファイバグレーティングデバイスを用いて簡単且つ小型とすることができる光信号増幅装置を提供する。  第1光ファイバグレーティングデバイスFGD1が第1半導体光増幅器16の出力側に備えられて、第1半導体光増幅器16に第1波長λ1の第1入力信号光L1が入力されると、第1波長λ1以外の光Ls1が第1ファイバグレーティングデバイスFGD1から反射されてその第1半導体光増幅器16に直接再度入力されるので、半導体光増幅器16とそれからの出力光Lout を伝送する第1光ファイバグレーティングデバイスFGD1との結合構造が簡単且つ小型となり、高速応答が可能となる。
    • 提供一种光信号放大装置,其通过反馈周围光来执行半导体光放大器的负反馈光放大。 在光信号放大装置中,通过使用光纤布拉格光栅装置,可以使半导体光放大器和用于透射半导体光放大器的输出光的光纤之间的连接结构变得简单和较小。 第一光纤布拉格光栅装置(FGD1)设置在第一半导体光放大器(16)的输出侧。 当在第一半导体光放大器(16)中输入第一波长(λ1)的第一输入信号光(L1)时,排除第一波长(λ1)的光的光(Ls1)从第一波长 光纤布拉格光栅装置(FGD1),并再次直接输入到第一半导体光放大器(16)。 因此,可以使第一半导体光放大器(16)和用于传输第一半导体光放大器(16)的输出光(Lout)的第一光纤布拉格光栅装置(FGD1)之间的连接结构简单小,高 可以实现速度响应。
    • 7. 发明申请
    • SEMICONDUCTOR DIODE LASER AMPLIFIER AND METHOD OF MANUFACTURING SAME
    • 半导体二极管激光放大器及其制造方法
    • WO9619023A2
    • 1996-06-20
    • PCT/IB9501000
    • 1995-11-13
    • PHILIPS ELECTRONICS NVPHILIPS NORDEN AB
    • TIEMEIJER LUKAS FREDERIK
    • H01S5/00H01S5/028H01S5/227H01S5/343H01S5/50H01S3/19H01S3/025
    • B82Y20/00H01S5/028H01S5/2277H01S5/34306H01S5/34313H01S5/3434H01S5/5009H01S5/5045H01S5/5063
    • The invention relates to a semiconductor diode laser amplifier (100) with an active layer (4) which is situated between two cladding layers (1A, (3, 6)) and in which a strip-shaped active region is present which is bounded in longitudinal direction by two end faces (7, 8) which are practically perpendicular to the active region and are provided each with an antireflection layer (71, 81). The amplification ripple of such a laser amplifier (100) is comparatively high, in particular when radiation of different wavelengths is present in the laser (100), such as the TE and TM portions of the radiation to be amplified. In a laser amplifier (100) according to the invention, a first end face (7) is provided with a first antireflection layer (71) which has a minimum reflection at a first wavelength, for example that at which the reflection is a minimum for the TE polarized portion of the radiation to be amplified, and the second end face (8) is provided with a second antireflection layer (81) which has a minimum reflection at a second wavelength different from the first, for example that at which the reflection is a minimum for the TM polarized portion of the radiation to be amplified. The product of the reflections is a minimum for both wavelengths as a result of this, at least lower than in the known laser (100) in which both end faces (7, 8) are provided with an identical antireflection layer (71, 81) which is optimized for an intermediate wavelength. The laser (100) according to the invention has a particularly low application ripple because this ripple is indeed proportional to the square root of said product of reflections. Good results are obtained with antireflection layers (71, 81) which comprise only a single layer, preferably made of silicon oxynitride.
    • 本发明涉及一种半导体二极管激光放大器(100),其具有位于两个覆层(1A,(3,6))之间的有源层(4),并且其中存在条带状有源区域 纵向方向由实际上垂直于有源区域的两个端面(7,8)组成并且设置有防反射层(71,81)。 这种激光放大器(100)的放大纹波相对较高,特别是当激光器(100)中存在不同波长的辐射时,例如要放大的辐射的TE部分和TM部分。 在根据本发明的激光放大器(100)中,第一端面(7)设置有第一抗反射层(71),其在第一波长处具有最小反射,例如对于 待放大的辐射的TE极化部分和第二端面(8)设置有第二抗反射层(81),其在与第一反射不同的第二波长处具有最小反射,例如反射 是要放大的辐射的TM偏振部分的最小值。 由于这个原因,反射的乘积对于两个波长都是最小的,至少比已知的两个端面(7,8)中设置有相同抗反射层(71,81)的激光器(100)更低, 其针对中间波长进行了优化。 根据本发明的激光器(100)具有特别低的应用波动,因为该纹波确实与所述反射产物的平方根成比例。 具有仅包含单层的抗反射层(71,81)获得良好的结果,优选由氮氧化硅制成。