基本信息:
- 专利标题: VARIABLE-GAIN GAIN-CLAMPED OPTICAL AMPLIFIERS
- 专利标题(中):可变增益增益钳位光放大器
- 申请号:PCT/GB2002/004061 申请日:2002-09-05
- 公开(公告)号:WO2003021733A1 公开(公告)日:2003-03-13
- 发明人: MICHIE, Walter, Craig , KELLY, Anthony, Edward , TOMLINSON, Andrew, Michael
- 申请人: KAMELIAN LIMITED , MICHIE, Walter, Craig , KELLY, Anthony, Edward , TOMLINSON, Andrew, Michael
- 申请人地址: Oxford Industrial Park, Mead Road, Yarnton, Oxford OX5 1QU GB
- 专利权人: KAMELIAN LIMITED,MICHIE, Walter, Craig,KELLY, Anthony, Edward,TOMLINSON, Andrew, Michael
- 当前专利权人: KAMELIAN LIMITED,MICHIE, Walter, Craig,KELLY, Anthony, Edward,TOMLINSON, Andrew, Michael
- 当前专利权人地址: Oxford Industrial Park, Mead Road, Yarnton, Oxford OX5 1QU GB
- 代理机构: MERRYWEATHER, Colin, Henry
- 优先权: GB0121466.7 20010905; GB0123553.0 20011001
- 主分类号: H01S5/50
- IPC分类号: H01S5/50
摘要:
An optical amplifier comprising a signal semiconductor optical amplifier (SOA) (1) and a control SOA (2) in an optical circuit comprising a signal path (4) passing through the signal SOA (1) and a laser cavity containing both the signal SOA (1) and the control SOA (2). The control SOA (2) may be arranged outside the laser cavity so that it does not amplify a signal in the signal path (4). Alternatively, the control SOA (2) is arranged in the signal path (4), but has insignificant gain in the predetermined signal band (3) so that it does not amplify a signal passing along the signal path (4). The laser cavity clamps the total gain of the signal SOA (1) and the control SOA (2). In use, the bias current supplied to the control SOA (2) is varied to control the clamped-gain of the signal SOA (1). Therefore the gain of a signal passing along the signal path (4) is clamped to a level which may be varied by control of the control SOA (2). In an alternative type of embodiment, a similar type of control is achieved in a structure integrated in a single semiconductor chip. In particular a waveguide (56) extends along a signal active layer (52) and a laser cavity arranged perpendicularly to the layered structure of the semiconductor chip contains both the signal active layer (52) and a control active layer (59) which corresponds to the control SOA (2).
摘要(中):
一种光放大器,包括信号半导体光放大器(SOA)(1)和控制SOA(2),该光电路包括通过信号SOA(1)的信号路径(4)和包含信号SOA (1)和控制SOA(2)。 控制SOA(2)可以被布置在激光腔外部,使得它不会在信号路径(4)中放大信号。 或者,控制SOA(2)被布置在信号路径(4)中,但在预定信号频带(3)中具有不显着的增益,使得它不放大沿着信号路径(4)的信号。 激光腔夹持信号SOA(1)和控制SOA(2)的总增益。 在使用中,提供给控制SOA(2)的偏置电流是变化的,以控制信号SOA(1)的钳位增益。 因此,沿着信号路径(4)传递的信号的增益被钳位到可以通过控制SOA(2)的控制来改变的水平。 在另一种类型的实施例中,在集成在单个半导体芯片中的结构中实现了类似类型的控制。 特别地,波导(56)沿着信号有源层(52)延伸,并且垂直于半导体芯片的分层结构布置的激光腔包含信号有源层(52)和控制有源层(59),对应于 控制SOA(2)。