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    • 7. 发明公开
    • Memory device
    • 内存设备
    • EP0326154A3
    • 1990-09-26
    • EP89101438.3
    • 1989-01-27
    • NEC HOME ELECTRONICS, LTD.
    • Ito, Susumu c/o NEC Home Electronics Ltd.
    • G11C7/00G11C11/44
    • H01L27/18G11C11/44H01L39/18
    • A memory device comprises first striped electrodes (2₁, 2₂, ...) and second striped electrodes (4₁, 4₂, ...) arranged so as to intersect and be insulated from each other, superconducting rings (8₁₁ 8₁₂, ...) each disposed in a region (6₁₁, 6₁₂, ...) surrounded by the first and second electrodes (2₁, 2₂, ... 4₁, 4₂, ...), superconduction control means (103) for changing an electric conduction type of selected ones of the superconducting rings (8₁₁, 8₁₂,...) to the ordinary conduction or to the superconduction, a write circuit (10) for providing signal currents to the first (2₁, 2₂, ...) and second (4₁, 4₂, ...) striped electrodes surrounding the selected superconducting rings (8₁₁, 8₁₂, ...) in synchronism with an operation of the superconduction control means (103) so that information data can be stored in the selected rings as permanent currents, and a read circuit (10) for detecting induction currents generated in the first (2₁, 2₂, ...) and second (4₁, 4₂, ...) striped electrodes surrounding selected ones of the superconducting rings (8₁₁, 8₁₂, ...) when the electric conduction of the selected rings (8₁₁, 8₁₂, ...) are changed to the ordinary conduction.
    • 存储器件包括布置成相互交叉并彼此绝缘的第一条状电极(21,22,...)和第二条形电极(41,42 ...),超导环(811 812,...) ),其被设置在由所述第一和第二电极(21,22,... 41,42,...)包围的区域(611,612 ...)中,用于改变导电的超导控制装置(103) 写入电路(10),用于向第一(21,22,...)和第二(22,22 ...)提供信号电流,其特征在于,所述超导环(811,812,...) (103)的操作同步地围绕所选择的超导环(811,812 ...)的条形电极(41,42,...),使得信息数据可以存储在所选择的环中作为 永久电流和用于检测在第一(21,22,...)和第二(41,42,...)条纹电极中产生的感应电流的读取电路(10) 当所选择的环(811,812,...)的导电改变为普通导通时,围绕所选择的超导环(811,812,...)中的一些。
    • 8. 发明公开
    • Logic device using ceramic superconducting element
    • 逻辑器件和存储器件具有陶瓷超导元件。
    • EP0347258A2
    • 1989-12-20
    • EP89306161.4
    • 1989-06-16
    • SHARP KABUSHIKI KAISHAMorisue, Michitada
    • Nojima, HideoKataoka, ShoeiHashizume, NobuoTsuchimoto, ShuheiMorisue, Michitada
    • H01L39/18
    • G11C11/44H01L39/18
    • A logic device includes a ceramic superconducting element (4) having magneto-resistive characteristics, and three electrodes (12, 14, 16) provided adjacent the ceramic superconducting element, and constructed in such a manner that a current is applied to one of the three electrode so that a magnetic field greater than a threshold magnetic field (H0) is normally applied to the ceramic superconducting element (4), and the other electrodes (14, 16) are used for increasing and decreasing the magnetic field. A memory device includes a superconducting loop (46, 48) at least one portion thereof being formed by a ceramic superconducting element (46) having grain boundaries, and an electrode (44) provided in approximation to said ceramic superconducting element (46), whereby a current flowing through a portion (48) of said superconducting loop which is other than said ceramic superconducting element (46) can be captured in said superconducting loop by a control of a magnetic field generated by the current flowing through said electrode (44).
    • 逻辑装置包括一个陶瓷超导元件(4)具有磁阻特性,并且3个电极(12,14,16)设置成邻近所述陶瓷超导元件,并在寻求的方式构成也将电流施加到三个中的一个 电极所以没有磁场大于阈值磁场(H0)更大的通常是施加到陶瓷超导元件(4),和其它电极(14,16)被用于增加和减小的磁场。 一种存储器装置,包括:设置一个超导环路(46,48),至少其一部分由一陶瓷超导元件构成(46),其具有晶界,并在近似所述陶瓷超导元件的电极(44)(46),由此 通过所述超导环路的所有比所述陶瓷超导元件(46)以外的部分(48)中流动的电流可以在所述超导环路通过由流过所述电极(44)的电流所产生的磁场的控制被捕获。