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    • 1. 发明公开
    • Logic device using ceramic superconducting element
    • 逻辑器件和存储器件具有陶瓷超导元件。
    • EP0347258A2
    • 1989-12-20
    • EP89306161.4
    • 1989-06-16
    • SHARP KABUSHIKI KAISHAMorisue, Michitada
    • Nojima, HideoKataoka, ShoeiHashizume, NobuoTsuchimoto, ShuheiMorisue, Michitada
    • H01L39/18
    • G11C11/44H01L39/18
    • A logic device includes a ceramic superconducting element (4) having magneto-resistive characteristics, and three electrodes (12, 14, 16) provided adjacent the ceramic superconducting element, and constructed in such a manner that a current is applied to one of the three electrode so that a magnetic field greater than a threshold magnetic field (H0) is normally applied to the ceramic superconducting element (4), and the other electrodes (14, 16) are used for increasing and decreasing the magnetic field. A memory device includes a superconducting loop (46, 48) at least one portion thereof being formed by a ceramic superconducting element (46) having grain boundaries, and an electrode (44) provided in approximation to said ceramic superconducting element (46), whereby a current flowing through a portion (48) of said superconducting loop which is other than said ceramic superconducting element (46) can be captured in said superconducting loop by a control of a magnetic field generated by the current flowing through said electrode (44).
    • 逻辑装置包括一个陶瓷超导元件(4)具有磁阻特性,并且3个电极(12,14,16)设置成邻近所述陶瓷超导元件,并在寻求的方式构成也将电流施加到三个中的一个 电极所以没有磁场大于阈值磁场(H0)更大的通常是施加到陶瓷超导元件(4),和其它电极(14,16)被用于增加和减小的磁场。 一种存储器装置,包括:设置一个超导环路(46,48),至少其一部分由一陶瓷超导元件构成(46),其具有晶界,并在近似所述陶瓷超导元件的电极(44)(46),由此 通过所述超导环路的所有比所述陶瓷超导元件(46)以外的部分(48)中流动的电流可以在所述超导环路通过由流过所述电极(44)的电流所产生的磁场的控制被捕获。