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    • 10. 发明公开
    • I/O cell configuration for a differential amplifier on a semiconductor chip and semiconductor package including the same
    • 用于在半导体芯片上的差分放大器以及那些含有半导体封装的输入/输出单元布置
    • EP2930745A2
    • 2015-10-14
    • EP15156566.0
    • 2015-02-25
    • Kabushiki Kaisha Toshiba
    • Fukuda, Shohei
    • H01L23/485H01L23/49H03K19/0185H03K19/177
    • H01L24/49G06F17/5068H01L23/481H01L23/528H01L24/05H01L24/06H01L24/48H01L2224/05554H01L2224/06133H01L2224/06135H01L2224/06139H01L2224/48011H01L2224/48091H01L2224/49431H01L2224/49433H01L2924/00014H01L2924/386H03K19/018514H03K19/17744H01L2224/45099H01L2224/05599
    • The semiconductor package includes a semiconductor chip (1) mounted on the base substrate (2). The semiconductor chip includes a core region disposed in a center part of the semiconductor chip, an internal circuit being provided in the core region. The semiconductor chip (1) includes a plurality of IO cell regions (I01, I02, I03) disposed in a line along a side of the semiconductor chip (1), a differential circuit being provided in each of the plurality of IO cell regions (I01, I02, I03). The semiconductor chip (1) includes a non-inverting pad electrode (P1, P2, P3) disposed above each of the IO cell regions (I01, I02, I03) and electrically connected to a non-inverting terminal of the differential amplifying circuit (A1, A2, A3). The semiconductor chip includes an inverting pad electrode (N1, N2, N3) disposed above each of the IO cell regions (I01, I02, I03) and connected to an inverting terminal of the differential circuit. A first set of a first non-inverting pad electrode (P1) and a first inverting pad electrode (N1) is disposed above a first IO cell region (I01) of the plurality of IO cell regions (I01, I02, I03), and the first set is disposed so that the first non-inverting pad electrode (P1) and the first inverting pad electrode (N1) are disposed along a first line (Y1) along the side (1a) of the semiconductor chip (1); andwherein a second set of a second non-inverting pad electrode (P2) and a second inverting pad electrode (N2) is disposed above a second IO cell region (102) of the plurality of IO cell regions (I01, I02, I03), and the second set is disposed so that the second non-inverting pad electrode (P2) and the second inverting pad electrode (N2) are disposed along a second line (Y2) along the side (1a) of the semiconductor chip (1).
    • 半导体封装包括:安装在所述基底基板(2)的半导体芯片(1)。 该半导体芯片包括在半导体芯片的中心部分设置在芯区域中,以在核心区域被提供内部电路。 在半导体芯片(1)包括:IO单元区域(I01,I02,I03),设置(在一个线沿(1),在各IO单元区域的多个被提供的差分电路的半导体芯片的一侧上的多个 I01,I02,I03)。 在半导体芯片(1)具备上述各IO单元区域的(I01,I02,I03),并电连接到所述差分放大电路的非反相端子(设置在非反相焊盘电极(P1,P2,P3) A1,A2,A3)。 该半导体芯片包括在反转上述各IO单元区域(I01,I02,I03)的设置,并且在反相差分电路的端子连接到焊盘电极(N1,N2,N3)。 第一组的第一非反相焊盘电极(P1)和第一反相焊盘电极(N1)IO单元区域(I01,I02,I03)的多个第一IO单元区域(I01)以上是设置,并 象第一非反相焊盘电极(P1)和所述第一反相焊盘电极(N1)沿着所述半导体芯片(1)的侧部(1A)的第一线(Y1)被布置在第一组设置; 并且其中的第二组的第二非反相焊盘电极(P2)和第二反相焊盘电极(N2)被IO单元区域的所述多个第二IO单元区域(102)的正上方(I01,I02,I03) 并且象在第二非反相焊盘电极(P2)和所述第二反相焊盘电极(N2)沿半导体芯片(1)的沿侧(1a)的第二线(Y2)被布置在第二组设置。