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    • 4. 发明授权
    • Chemically adsorbed film and method of manufacturing the same
    • 化学吸附膜及其制造方法
    • US6410152B2
    • 2002-06-25
    • US89253001
    • 2001-06-28
    • MATSUSHITA ELECTRIC IND CO LTD
    • OHTAKE TADASHIMINO NORIHISAOGAWA KAZUFUMI
    • B05D1/18B32B9/04
    • B82Y30/00B05D1/185B82Y40/00Y10T428/261Y10T428/31504Y10T428/31663
    • A highly dense chemically adsorbed film is formed by repeating the alternate process of adsorption reaction and washing. Adsorption reaction is directed by contacting the substrate surface, which has or is given an alkali metal or a functional group, with a chemical adsorbent, having halosilyl or alkoxysilyl groups at the end of molecules. An unreacted chemical adsorbent is then washed away from the substrate surface. The alternate treatment of adsorption reaction and washing is repeated, thereby covalently bonding a chemically adsorbed film to the substrate surface. As a result, a chemically adsorbed film is formed in which stem molecules are directly or indirectly covalently bonded to the substrate surface via at least one element chosen from the group consisting of Si, Ge, Sn, Ti, Zr, S or C and graft molecules are covalently bonded to at least one element chosen from Si, Ge, Sn, Ti, Zr, S or C via at least one bond chosen from -SiO-, -GeO-, SnO-, -TiO-, ZrO-, -SO2-, -SO- and -C-.
    • 通过重复吸附反应和洗涤的交替过程形成高密度的化学吸附膜。 吸附反应是通过将具有或被赋予碱金属或官能团的底物表面与分子末端具有卤代甲硅烷基或烷氧基甲硅烷基的化学吸附剂接触来进行的。 然后将未反应的化学吸附剂从基底表面上冲走。 重复吸附反应和洗涤的替代处理,从而将化学吸附的膜共价键合到基材表面。 结果,形成化学吸附膜,其中茎分子通过选自Si,Ge,Sn,Ti,Zr,S或C中的至少一种元素直接或间接地共价结合到基底表面,并且接枝 分子通过选自-SiO - ,-GeO-,SnO-,-TiO-,ZrO - , - 的至少一种键共价结合至选自Si,Ge,Sn,Ti,Zr,S或C中的至少一种元素。 SO2-,-SO-和-C-。
    • 8. 发明公开
    • LIQUID CRYSTAL DISPLAY WITH IMAGE READING FUNCTION, IMAGE READING METHOD AND MANUFACTURING METHOD
    • FLÜSSIGKRISTALLANZEIGEMIT BILDEINLESEFUNKTION,BILDEINLESEVERFAHREN UND HERSTELLUNGSVERFAHREN
    • EP0915367A4
    • 2000-04-12
    • EP98917611
    • 1998-04-22
    • MATSUSHITA ELECTRIC IND CO LTD
    • OGAWA KAZUFUMIISHIKAWA SHINZABUROOKADA TAKASHITAKETOMI YOSHINAO
    • G02F1/136G02F1/1335G02F1/135G02F1/1368G09G3/36H04N1/00H04N1/028H04N1/48G06F9/35G06T1/00H04N1/04
    • H04N1/00129G02F1/135G02F1/1368G09G3/3648G09G2300/0408G09G2300/0434G09G2300/0809G09G2310/0235H04N1/00127H04N1/028H04N1/02805H04N1/486H04N2201/0081
    • A n-channel TFT (L) (26) which is connected to a transparent pixel electrode (24) and a p-channel TFT (D) (27) which is connected to the cathode side of a photodiode (25) are connected to a common source line (22) and a common gate line (23). When a positive voltage (VL) or a negative voltage (VD) are applied to the gate line (23), both the TFTs can be independently controlled to be in a ON-state. A backlight (18) which is provided on the rear of an active matrix panel (13) has monochromatic light sources (18a - 18c) emitting red, blue and green lights, and images of the colors are displayed in a time-division manner. When the images are read, by using the monochromatic light sources (18a - 18c) successively, the red, blue and green component images are read for every pixel. Only the parts of a liquid crystal layer (14) corresponding to every other pixel (P1) in the vertical and horizontal directions are brought into light transmitting states, a certain amount of charge is stored only in the photodiodes (25) of the pixels (P1), and the photodiodes (25) are exposed to light. Then the image formed by the pixels (P1) is read. The similar processes for the pixels adjacent to the pixels (P1) are repeated to read the image of the original for all the pixels.
    • 连接到透明像素电极(24)的n沟道TFT(L)(26)和连接到光电二极管(25)的阴极侧的p沟道TFT(D)(27)连接到 公共源极线(22)和公共栅极线(23)。 当正电压(VL)或负电压(VD)被施加到栅极线(23)时,两个TFT可以被独立地控制为处于导通状态。 设置在有源矩阵面板(13)的背面的背光(18)具有发出红色,蓝色和绿色光的单色光源(18a-18c),并且以时分方式显示这些颜色的图像。 当读取图像时,通过依次使用单色光源(18a-18c),针对每个像素读取红色,蓝色和绿色分量图像。 仅在垂直和水平方向上与每隔一个像素(P1)相对应的液晶层(14)的部分进入透光状态,一定量的电荷仅存储在像素(P)的光电二极管(25) P1)和光电二极管(25)暴露于光下。 然后读取由像素(P1)形成的图像。 重复与像素(P1)相邻的像素的类似处理以读取所有像素的原始图像。
    • 9. 发明公开
    • SOLUTION FOR FORMING SILICA COATING FILM, PROCESS FOR PRODUCING THE SAME, AND SILICA COATING FILM AND PROCESS FOR PRODUCING THE SAME
    • 解用于制造氧化硅涂层,用于生产该溶液中,氧化硅AND METHOD FOR THE PRODUCTION
    • EP1152044A4
    • 2004-12-22
    • EP99954376
    • 1999-11-04
    • MATSUSHITA ELECTRIC IND CO LTD
    • OGAWA KAZUFUMITAKEBE TAKAKOOTAKE TADASHINOMURA TAKAIKI
    • C09D183/02H01L21/312H01L21/316C09J183/02G02F1/136
    • H01L21/02126C09D183/02H01L21/02216H01L21/02282H01L21/02337H01L21/3124H01L21/31695
    • The present invention provides a solution for forming a silica-based coating film which, by comprising an organic solvent and a chlorosiloxane compound, is excellent in terms of reactivity with a substrate material. When this solution for forming a silica-based coating film is applied to a surface of a substrate material in a dry atmosphere and the substrate material is put into an atmosphere containing moisture, a silica-based coating film excellent in terms of durability can be manufactured without adding a catalyst or carrying out heat treatment. In addition, by adding anhydrous silica fine particles to the solution for forming a silica-based coating film, a solution that enables the controlling of viscosity and is excellent in terms of film coatability can be prepared. When this solution for forming a silica-based coating film is applied to a surface of a substrate material in a dry atmosphere and the substrate material is put into an atmosphere containing moisture, a thick silica-based coating film can be prepared without adding a catalyst or carrying out heat treatment.
    • 本发明提供用于形成二氧化硅系涂膜其中,由有机溶剂和氯代硅氧烷化合物的含有溶液,具有优异的与材料基板反应性方面。 当该溶液用于形成二氧化硅系涂膜施加于基底材料的表面在干燥气氛下和基片材料放入到大气中含有的水分,一个可被制造在耐久性方面的二氧化硅系涂膜优良 不添加催化剂或进行热处理。 另外,通过加入无水二氧化硅细颗粒用于形成氧化硅类覆膜电影该溶液中,溶液没有启用粘度的控制并具有优良的涂膜性而言,可以制备。 当该溶液用于形成二氧化硅系涂膜施加于基底材料的表面在干燥气氛下和基片材料放入到大气中含有的水分,一个厚的二氧化硅系涂膜可以制备不添加催化剂 或进行热处理。