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1. 发明专利

IL290455D0 Methods of treating psychological and brain disorders 未知
公开(公告)号：IL290455D0
公开(公告)日：2022-04-01
申请号：IL29045522
申请日：2022-02-08
申请人： UNIV MARYLAND , THOMPSON SCOTT
发明人： THOMPSON SCOTT
IPC分类号： A61K31/4045 , A61K31/517 , A61K31/675 , A61K36/07 , A61K45/06 , A61P25/00
摘要： Provided herein are methods for preventing or treating a psychological disorder. A serotonin agonist or an agonist of serotonin receptors is administered separately, sequentially or simultaneously in combination with a serotonin receptor 2A antagonist.

2. 发明专利

IL290455A Methods of treating psychological and brain disorders 未知
公开(公告)号：IL290455A
公开(公告)日：2022-04-01
申请号：IL29045522
申请日：2022-02-08
申请人： UNIV MARYLAND , THOMPSON SCOTT
发明人： THOMPSON SCOTT
摘要： Provided herein are methods for preventing or treating a psychological disorder. A serotonin agonist or an agonist of serotonin receptors is administered separately, sequentially or simultaneously in combination with a serotonin receptor 2A antagonist.

3. 发明专利

IL265648D0 P2x3 and/or p2x2/3 compounds and methods 未知
公开(公告)号：IL265648D0
公开(公告)日：2019-05-30
申请号：IL26564819
申请日：2019-03-26
申请人： ASANA BIOSCIENCES LLC , THOMPSON SCOTT K , PRIESTLEY TONY , KUNDU MRINALKANTI , SAHA ASHIS , NATH SUVADEEP
发明人： THOMPSON SCOTT K , PRIESTLEY TONY , KUNDU MRINALKANTI , SAHA ASHIS , NATH SUVADEEP
IPC分类号： C07D20060101

4. 发明专利

CA2577547A1 METHOD AND SYSTEM FOR DISCRIMINATING IMAGE REPRESENTATIONS OF CLASSES OF OBJECTS 未知
公开(公告)号：CA2577547A1
公开(公告)日：2006-03-02
申请号：CA2577547
申请日：2005-05-03
申请人： THOMPSON SCOTT F , PENN ALAN
发明人： THOMPSON SCOTT F , PENN ALAN
IPC分类号： A61B5/055 , A61B6/00 , G01R33/56 , G06T7/00
摘要： A method of identifying the location of a lesion in an image and evaluating whether the identified lesion is more likely to be cancerous, benign or uncertain is provided where the image includes a plurality of pixels, each pixel having a particular intensity I in the range of 0

5. 发明专利

CA2356770A1 CORNICE OR CROWN MOLDING FINISHING ACCESSORY 未知
公开(公告)号：CA2356770A1
公开(公告)日：2002-03-05
申请号：CA2356770
申请日：2001-08-30
申请人： WATSON TOM , THOMPSON SCOTT
发明人： WATSON TOM , THOMPSON SCOTT
IPC分类号： E04F19/04 , E04F19/02
摘要： A cornice or crown molding finishing accessory (10) allows creation of a smooth, continuous and aesthetic finish to the joint between first and second moldin g segments. These molding segments may be oriented to form inside or outside corners. Preferre d examples of the finishing accessory are adapted for use with outside and inside 90 degree corners. The molding finishing accessory provides first and second facade-creating flanges (20), (40) which have a cross-sectional shape including a molding-conforming curve designed to match the cross- sectional decorative surface of the molding segments. The flanges meet at a vertex (60), from which an anchor element extends. In use, the anchor element (80) is inserted into a gap defined between the first and second molding segments, thereby holding the finishing accessory in place. A thin layer of drywall "mud" is brushed over flanges of the finishing accessory and adjacent areas of the molding segments, thereby smoothing over any lines of transitio n between the finishing accessory and the molding segments. The resulting appearance is th at of a perfect transition between the first and second molding segments, and complete maski ng of the gap between these segments.

6. 发明授权

US1342475A Gun control 失效
标题翻译：枪支控制
公开(公告)号：US1342475A
公开(公告)日：1920-06-08
申请号：US23015918
申请日：1918-04-22
申请人： MCGEHEE THOMPSON SCOTT
发明人： MCGEHEE THOMPSON SCOTT
IPC分类号： F41G5/22
CPC分类号： F41G5/22

7. 发明申请

US20220273680A1 Methods of Treating Psychological and Brain Disorders 有权
公开(公告)号：US20220273680A1
公开(公告)日：2022-09-01
申请号：US17634729
申请日：2020-08-13
申请人： Thompson Scott
发明人： Thompson Scott
IPC分类号： A61K31/675 , A61K31/517 , A61K31/36 , A61P25/00
摘要： Provided herein are methods for preventing or treating a psychological disorder. A serotonin agonist or an agonist of serotonin receptors is administered separately, sequentially or simultaneously in combination with a serotonin receptor 2A antagonist.

8. 发明申请

WO2015076879A1 DAMPING FLUID DEVICES, SYSTEMS AND METHODS 审中-公开
标题翻译：阻尼流体装置，系统和方法
公开(公告)号：WO2015076879A1
公开(公告)日：2015-05-28
申请号：PCT/US2014/050500
申请日：2014-08-11
申请人： LORD CORPORATION , THOMPSON, Scott K. , DOBBS, David R. , HALILOVIC, Haris , WYANT, Christopher
发明人： THOMPSON, Scott K. , DOBBS, David R. , HALILOVIC, Haris , WYANT, Christopher
IPC分类号： F16F13/08 , F16F13/10
CPC分类号： F16F13/08 , B62D33/0604 , F16F13/103 , F16F2226/04 , F16F2230/00
摘要： The present subject matter relates to improved damping fluid mount devices, systems, and methods in which a damping fluid mount (100) includes an inner member (110), an elastomer section (130) that is affixed to an outer surface of the inner member (110), and a cup (200) containing viscous fluid (300). The elastomer section (130) has an outer diameter that is variable along an elastomer contour, and a crimped portion of the cup is radially crimped into the elastomer section (130) such that the crimped portion precompresses the elastomer section (130) and substantially mimics the elastomer contour.
摘要翻译：本发明涉及改进的阻尼流体安装装置，系统和方法，其中阻尼流体支架（100）包括内部构件（110），弹性体部分（130），其固定到内部构件的外表面（110）和包含粘性流体（300）的杯（200）。弹性体部分（130）具有沿弹性体轮廓变化的外径，并且杯的卷曲部分径向卷曲到弹性体部分（130）中，使得卷曲部分预压缩弹性体部分（130）并且基本模拟弹性体轮廓。

9. 发明申请

WO2011163169A1 ADVANCED TRANSISTORS WITH PUNCH THROUGH SUPPRESSION 审中-公开
标题翻译：先进的晶体管通过抑制通过PUNCH
公开(公告)号：WO2011163169A1
公开(公告)日：2011-12-29
申请号：PCT/US2011/041165
申请日：2011-06-21
申请人： SUVOLTA, INC. , SHIFREN, Lucian , RANADE, Pushkar , GREGORY, Paul, E. , SONKUSALE, Sachin, R. , ZHANG, Weimin , THOMPSON, Scott, E.
发明人： SHIFREN, Lucian , RANADE, Pushkar , GREGORY, Paul, E. , SONKUSALE, Sachin, R. , ZHANG, Weimin , THOMPSON, Scott, E.
IPC分类号： G05F1/10 , H01L29/78
CPC分类号： H01L29/1083 , H01L21/823412 , H01L21/82345 , H01L21/823493 , H01L27/088 , H01L27/092 , H01L29/0847 , H01L29/1033 , H01L29/1045 , H01L29/36 , H01L29/66537 , H01L29/78 , H01L29/7816 , H01L29/7833 , H01L29/7836
摘要： An advanced transistor with punch through suppression includes a gate with length Lg, a well doped to have a first concentration of a dopant, and a screening region positioned under the gate and having a second concentration of dopant. The second concentration of dopant may be greater than 5 x 10 dopant atoms per cm. At least one punch through suppression region is disposed under the gate between the screening region and the well. The punch through suppression region has a third concentration of a dopant intermediate between the first concentration and the second concentration of dopant. A bias voltage may be applied to the well region to adjust a threshold voltage of the transistor.
摘要翻译：具有穿通抑制的高级晶体管包括具有长度为Lg的阱，阱掺杂以具有掺杂剂的第一浓度，以及位于栅极下方并具有第二掺杂浓度的屏蔽区域。掺杂剂的第二浓度可以大于每厘米5×10个掺杂剂原子。在筛选区域和井之间的栅极下方设置有至少一个穿孔抑制区域。穿通抑制区域具有在第一浓度和第二浓度掺杂剂之间的掺杂剂的第三浓度。可以将偏置电压施加到阱区域以调整晶体管的阈值电压。

10. 发明申请

WO2011163164A1 ADVANCED TRANSISTORS WITH THRESHOLD VOLTAGE SET DOPANT STRUCTURES 审中-公开
标题翻译：具有阈值电压设定多晶硅结构的先进晶体管
公开(公告)号：WO2011163164A1
公开(公告)日：2011-12-29
申请号：PCT/US2011/041156
申请日：2011-06-21
申请人： SUVOLTA, INC. , SHIFREN, Lucian , RANADE, Pushkar , SCUDDER, Lance , THOMPSON, Scott, E.
发明人： SHIFREN, Lucian , RANADE, Pushkar , SCUDDER, Lance , THOMPSON, Scott, E.
IPC分类号： H01L29/10 , H01L29/36 , H01L29/78
CPC分类号： H01L21/823412 , H01L21/265 , H01L21/82345 , H01L21/823493 , H01L27/088 , H01L29/1083 , H01L29/66537 , H01L29/7836
摘要： An advanced transistor with threshold voltage set dopant structure includes a gate with length Lg and a well doped to have a first concentration of a dopant. A screening region is positioned between the well and the gate and has a second concentration of dopant greater than 5 x 10 18 dopant atoms per cm 3 . A threshold voltage set region is formed by placement of a threshold voltage offset plane positioned above the screening region. The threshold voltage set region may be formed by delta doping and have a thickness between Lg/5 and Lg/1. The structure uses minimal or no halo implants to maintain channel dopant concentration at less than 5 x 10 17 dopant atoms per cm 3 .
摘要翻译：具有阈值电压设置掺杂剂结构的高级晶体管包括具有长度Lg的阱，并且阱掺杂以具有掺杂剂的第一浓度。筛选区域位于阱和栅极之间，并且具有大于每立方厘米5×1018个掺杂剂原子的第二浓度的掺杂剂。通过放置位于筛选区域上方的阈值电压偏移平面来形成阈值电压设定区域。阈值电压设定区域可以通过δ掺杂形成，并具有Lg / 5和Lg / 1之间的厚度。该结构使用最小或无晕轮植入物来保持沟道掺杂剂浓度小于每立方厘米5×1017个掺杂剂原子。

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