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1. 发明专利

JP2010161392A Apparatus for manufacturing semiconductor or liquid crystal and method of vaporizing liquid material gas 有权
标题翻译：用于制造半导体或液晶的装置和液体气体气体的蒸发方法
公开(公告)号：JP2010161392A
公开(公告)日：2010-07-22
申请号：JP2010040549
申请日：2010-02-25
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： H01L21/31 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To provide an apparatus capable of rapidly manufacturing a semiconductor or liquid crystal display which has high speed, reproducibility, and high uniformity.
SOLUTION: The manufacture by a feed forward system is allowed, which includes a control system for a plurality of gas partial pressures and pressure in an apparatus which can supply given gas which exceeds set flow rate for given time upstream of the apparatus and which can keep a plurality of gas partial pressures and pressure in the apparatus constant by linking the control system to a discharge rate variable vacuum discharge apparatus or an opening variable fluid control valve provided downstream of the apparatus.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够快速制造具有高速度，再现性和高均匀性的半导体或液晶显示器的装置。解决方案：允许通过前馈系统的制造，其包括在装置中可以提供多个气体分压和压力的控制系统，该设备可以在装置的上游给定时间内提供超过设定流量的给定气体，其可以通过将控制系统连接到设置在设备下游的排出速率可变真空排放装置或可开启的可变流体控制阀，使设备中的多个气体分压和压力恒定。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010091447A Device and method for measuring surface shape 有权
标题翻译：用于测量表面形状的装置和方法
公开(公告)号：JP2010091447A
公开(公告)日：2010-04-22
申请号：JP2008262469
申请日：2008-10-09
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , YODA MASAHIRO
IPC分类号： G01Q30/12 , G01B21/30 , G01Q60/24
摘要： PROBLEM TO BE SOLVED: To provide a device and method for stably measuring the surface shape while eliminating the effect of static charge and without causing a change in the surface of an active object to be measured in measuring the surface shape using a scanning type probe microscope. SOLUTION: The scanning type probe microscope 100 has a measurement probe 104a for scanning the surface of a sample 101 to be measured, and a solution 102 is provided between the sample 101 to be measured and the measurement probe 104a over at least the measurement range of the sample 101 to be measured. The solution 102 is used for preventing the surface of the sample 101 to be measured and the measurement probe 104a from being charged and preventing a natural oxide film or organic material from growing or being adsorbed by the surface of the sample 101 to be measured. As the solution, for example, isopropyl alcohol (IPA) is cited, but a gas having the physical properties satisfying the above requirements may be used instead of the solution. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在消除静电荷的效果的同时稳定地测量表面形状并且在使用扫描测量表面形状时不引起要测量的活动物体的表面的变化的装置和方法型探针显微镜。解决方案：扫描型探针显微镜100具有用于扫描要测量的样品101的表面的测量探针104a，并且在被测量样品101和测量探针104a之间至少设置有溶液102 要测量的样品101的测量范围。溶液102用于防止样品101的表面被测量，并且测量探针104a被充电并且防止天然氧化物膜或有机材料生长或被被测量的样品101的表面吸附。作为溶液，例如可举出异丙醇（IPA），但也可以使用具有满足上述要求的物性的气体来代替溶液。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008277306A Plasma device 审中-公开
标题翻译：等离子体装置
公开(公告)号：JP2008277306A
公开(公告)日：2008-11-13
申请号：JP2008151121
申请日：2008-06-09
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , NITTA TAKEHISA , HIRAYAMA MASAKI , TAKANO HARUYUKI , KAIHARA TATSU
IPC分类号： H05H1/46 , C23C16/44 , C23C16/511 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316
CPC分类号： H01J37/32238 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/02115 , H01L21/0212 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02197 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31675 , H01L21/31691
摘要： PROBLEM TO BE SOLVED: To provide a plasma device exciting uniform and high-density plasma in a large area, uniformly supplying raw gas, and quickly removing reaction by-products gas. SOLUTION: Reference numerals 4406, 4407, 4408, 4410, 4412, 4413 and 4414 indicate a vacuum container, an electrode I, a substrate, a shower plate, an electrode II, a gas introduction port, a magnetic field application means and a vacuum pump, respectively. A dipole ring magnet with a plurality of permanent magnets annularly arranged is adopted for the magnetic field application means 4413. The gas introduced from the gas introduction port 4412 is discharged to a treatment space from a number of pores formed at the shower plate 4410. The introduced gas and reaction product gas discharged from the substrate surface pass through a space between the magnetic field application means 4413a and 4413b at the side of the substrate and are discharged to the outside from a plurality of the vacuum pumps 4414. There is provided a comparatively wide space on an upper part of the pumps 4414 so as not to reduce the conductance of the gasses. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在大面积上激发均匀和高密度等离子体的等离子体装置，均匀地供应原料气体，并快速除去反应副产物气体。解决方案：附图标记4406,4407,4408,4410,4412,4413和4414表示真空容器，电极I，基板，喷淋板，电极II，气体导入口，磁场施加装置和真空泵。磁场施加装置4413采用具有多个环形排列的永久磁铁的偶极环磁体。从气体导入口4412导入的气体从喷淋板4410上形成的多个孔排出到处理空间。从基板表面排出的引入气体和反应产物气体通过基板一侧的磁场施加装置4413a和4413b之间的空间，并从多个真空泵4414排出到外部。在泵4414的上部的宽的空间，以便不降低气体的电导。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008251666A Three-dimensional structure semiconductor device 审中-公开
标题翻译：三维结构半导体器件
公开(公告)号：JP2008251666A
公开(公告)日：2008-10-16
申请号：JP2007088444
申请日：2007-03-29
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , YODA MASAHIRO
IPC分类号： H01L25/065 , H01L21/8234 , H01L23/52 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/088
CPC分类号： H01L27/0688 , H01L21/8221 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a three-dimensional structure semiconductor device which prevents an increase in the area of a chip and increases the operation frequency of the chip.
SOLUTION: The three-dimensional structure semiconductor device comprises a first integrated circuit including a plurality of regions formed in a first semiconductor layer and a first wiring layer formed on the first semiconductor layer, a first insulating layer overlaid on the first wiring layer, and a second integrated circuit including a plurality of regions formed in a second semiconductor layer overlaid on the first insulating layer and a second wiring layer formed on the second semiconductor layer. The first integrated circuit is connected electrically to the second integrated circuit through an interconnect penetrating the integrated circuits in the direction of lamination of the layers. At least one of two-way data communication, control signal supply, and clock signal supply between the first and second integrated circuits is carried out through the penetrating interconnect.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种三维结构半导体器件，其防止芯片的面积增加并增加芯片的工作频率。解决方案：三维结构半导体器件包括第一集成电路，其包括形成在第一半导体层中的多个区域和形成在第一半导体层上的第一布线层，第一绝缘层覆盖在第一布线层以及第二集成电路，包括形成在覆盖在第一绝缘层上的第二半导体层中的多个区域和形成在第二半导体层上的第二布线层。第一集成电路通过在层的层叠方向穿过集成电路的互连件与第二集成电路电连接。第一和第二集成电路之间的双向数据通信，控制信号供给和时钟信号供给中的至少一个通过穿透互连来进行。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007191799A Vacuum treatment method 有权
标题翻译：真空处理方法
公开(公告)号：JP2007191799A
公开(公告)日：2007-08-02
申请号：JP2007080384
申请日：2007-03-26
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO
IPC分类号： C23C14/00 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide vacuum exhaust equipment capable of stably producing a high performance semiconductor device at a high yield, to provide a semiconductor fabrication apparatus, and to provide a vacuum treatment method.
SOLUTION: The semiconductor fabrication apparatus is composed of: a turbo molecule pump 103; and an auxiliary pump 105 connected to the exhaust side of the turbo molecule pump. A gas introduction part 114 for introducing a prescribed gas is provided between the turbo molecule pump 103 and the auxiliary pump 105, and the inside of the vacuum chamber 101 is exhausted as a prescribed gas is introduced from the introduction part.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高产率稳定地生产高性能半导体器件的真空排气设备，以提供半导体制造装置，并提供真空处理方法。解决方案：半导体制造装置包括：涡轮分子泵103; 以及与涡轮分子泵的排气侧连接的辅助泵105。在涡轮分子泵103和辅助泵105之间设置用于引入预定气体的气体引入部114，并且从引入部引入规定气体，真空室101的内部被排出。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005252270A Oxide film and forming method therefor and semiconductor device 审中-公开
标题翻译：氧化膜及其形成方法及其半导体器件
公开(公告)号：JP2005252270A
公开(公告)日：2005-09-15
申请号：JP2005061839
申请日：2005-03-07
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO
IPC分类号： H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide an oxide film onto a clean silicon wafer surface not contaminated by organic matters, the oxide film excellent in performance of withstand voltage and the like, and further, provide a highly integrated, high-performance semiconductor device.
SOLUTION: Since the oxide film of a silicon wafer can be substantially improved in terms of its property, and a high-property oxide can be formed in a low-temperature process, a higher-performance, highly integrated semiconductor device can be materialized.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在不被有机物污染的干净的硅晶片表面上提供氧化膜，耐电压性能优异的氧化膜等，并且还提供高度集成的高性能半导体设备。解决方案：由于硅晶片的氧化膜在其性能方面可以显着改善，并且可以在低温工艺中形成高性能氧化物，因此可以将高性能，高度集成的半导体器件物化。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2013062514A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2013062514A
公开(公告)日：2013-04-04
申请号：JP2012227740
申请日：2012-10-15
申请人： Tohoku Univ , 国立大学法人東北大学 , Foundation For Advancement Of International Science , 公益財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , KURODA MICHIHITO
IPC分类号： H01L21/336 , H01L21/28 , H01L21/304 , H01L21/316 , H01L21/318 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/417 , H01L29/78 , H01L29/786
CPC分类号： H01L29/045 , H01L21/02057 , H01L21/28194 , H01L21/28202 , H01L21/823807 , H01L21/823835 , H01L21/82385 , H01L21/84 , H01L27/1203 , H01L29/41766 , H01L29/456 , H01L29/518 , H01L29/785 , H01L2029/7857
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which can increase a drain current obtained correspondingly to a certain amount of drain voltage and gate voltage.SOLUTION: A manufacturing method of a semiconductor device including a channel region, a source region and a drain region, a total of two first electrodes electrically connected to the source region and the drain region, respectively, and a second electrode provided on the channel region via a gate insulation film, comprises: cleaning a surface of the gate insulation film by using a cleaning solvent in which IPA is added to hydrogenated ultra pure water containing oxygen of not more than 1 ppb, in a nitrogen atmosphere containing oxygen of not more than 1ppb and in a state of being light shielded; and performing formation by isotropic oxidation or nitriding to make flatness of an interface between the channel region and the gate insulation film become a peak-to-valley value of not more than 0.3 nm in 2 nm length in a direction from the source region toward the drain region, and make a resistance from the first electrode to the channel region be not more than 4 Ω μm.
摘要翻译：要解决的问题：提供一种可以增加相应于一定量的漏极电压和栅极电压而获得的漏极电流的半导体制造方法。解决方案：一种包括沟道区，源区和漏区的半导体器件的制造方法，分别与源区和漏区电连接的总共两个第一电极和设置在源极区和漏极区上的第二电极通过栅极绝缘膜的沟道区域包括：通过使用将IPA添加到含氧量不超过1ppb的氢的超纯水中的清洗溶剂，在含有氧的氮气氛中，清洁栅极绝缘膜的表面不超过1ppb，处于遮光状态; 并且通过各向同性氧化或氮化进行形成，使得沟道区域和栅极绝缘膜之间的界面的平坦度在从源极区域朝向源极区域的方向上成为2nm长度的不大于0.3nm的峰谷值漏极区域，并且从第一电极到沟道区域的电阻不大于4Ωμm。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011119747A Method for forming nitride film, method for forming oxynitride film, method for sputtering nitride film, and method for forming gate insulation film 有权
标题翻译：形成氮化膜的方法，形成氧化膜的方法，用于溅射氮化物膜的方法和形成栅绝缘膜的方法
公开(公告)号：JP2011119747A
公开(公告)日：2011-06-16
申请号：JP2011000365
申请日：2011-01-05
申请人： Foundation For Advancement Of International Science , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , SUGAWA SHIGETOSHI
IPC分类号： H01L21/316 , C23C8/02 , C23C8/36 , C23C14/06 , C23C16/40 , H01L21/31 , H01L21/3105 , H01L21/314 , H01L21/318 , H01L21/336 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a high quality uniform oxide film, nitride film, or oxynitride film, the film thickness of which can be reduced without substantially causing a leakage current.
SOLUTION: A method for forming an insulation film includes: a step of forming the insulation film on a substrate; and a step of exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride NH* which is generated with a plasma of an inert gas Kr or Ar to convert the film quality.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供形成高质量的均匀氧化膜，氮化物膜或氧氮化物膜的方法，其膜厚可以减小而基本上不产生泄漏电流。解决方案：一种用于形成绝缘膜的方法包括：在基板上形成绝缘膜的步骤; 以及将绝缘膜暴露于用惰性气体Kr或Ar的等离子体产生的原子态氧O *或原子态氮化氢NH *以转换膜质量的步骤。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010287897A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010287897A
公开(公告)日：2010-12-24
申请号：JP2010156621
申请日：2010-07-09
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , KURODA MICHIHITO
IPC分类号： H01L21/8238 , H01L21/28 , H01L27/08 , H01L27/092 , H01L29/417 , H01L29/786
CPC分类号： H01L29/045 , H01L21/02057 , H01L21/28194 , H01L21/28202 , H01L21/823807 , H01L21/823835 , H01L21/82385 , H01L21/84 , H01L27/1203 , H01L29/41766 , H01L29/456 , H01L29/518 , H01L29/785 , H01L2029/7857
摘要： PROBLEM TO BE SOLVED: To provide a high-speed semiconductor device operable at a clock frequency ≥around 10 GHz. SOLUTION: This semiconductor device includes n-MOSFETs 100n and a p-MOSFET 100p; a surface of a first region for forming a channel of the n-MOSFET has a surface within ±10° from a (100) surface or a surface within ±10° from a (110) surface; a surface of a second region for forming a channel of the p-MOSFET has a surface within ±10° from a (110) surface or a surface within ±10° from a (100) surface; resistance from each of the first and second regions to each of a source electrode and a drain electrode at both ends is set ≤4 Ω μcm; an interface between the first region and a first gate insulating layer and an interface between the second region and a second gate insulating layer are set at flatness in which a peak-to-valley value at a length of 2 nm in a direction from a source of each region toward a drain is ≤0.3 nm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可在10GHz以上的时钟频率工作的高速半导体器件。解决方案：该半导体器件包括n-MOSFET 100n和p-MOSFET 100p; 用于形成n-MOSFET的沟道的第一区域的表面具有与（100）表面±10°的表面或距（110）表面±10°以内的表面; 用于形成p-MOSFET的沟道的第二区域的表面具有与（110）表面在±10°内的表面或距离（100）表面±10°内的表面; 从第一和第二区域的每一个到两端的源电极和漏电极的电阻设定为≤4Ωμcm; 在第一区域和第一栅极绝缘层之间的界面以及第二区域和第二栅极绝缘层之间的界面被设置为平坦度，其中在距离源极的方向上具有2nm的长度的峰谷值的每个区域朝向漏极≤3.3nm。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010109143A Method of forming contact, method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：形成接触方法，制造半导体器件的方法和半导体器件
公开(公告)号：JP2010109143A
公开(公告)日：2010-05-13
申请号：JP2008279536
申请日：2008-10-30
申请人： Foundation For Advancement Of International Science , Tohoku Univ , 国立大学法人東北大学 , 財団法人国際科学振興財団
发明人： OMI TADAHIRO , TERAMOTO AKINOBU , ISOGAI TATSUNORI , TANAKA HIROAKI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/8238 , H01L23/52 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L21/823814 , H01L21/28079 , H01L21/28518 , H01L21/823835 , H01L27/092 , H01L29/41733 , H01L29/458 , H01L29/4958 , H01L29/66772 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein low-resistivity contacts are achieved. SOLUTION: In a state where a first metal layer coming into contact with a semiconductor is covered with an anti-oxidation second metal layer, only the first metal layer is silicided to form a silicide layer where oxygen is not mixed. A metal of which the difference in work function from the semiconductor is a prescribed value is used as a material of the first metal layer, and a metal which doesn't react with the first metal layer at an annealing temperature is used as a material of the second metal layer. COPYRIGHT: (C)2010,JPO&INPIT

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