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1. 发明公开

EP1307923A1 HOCHVOLT-DIODE UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：高压二极管和方法及其
公开(公告)号：EP1307923A1
公开(公告)日：2003-05-07
申请号：EP01964927.6
申请日：2001-08-24
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG , Infineon Technologies AG
发明人： BARTHELMESS, Reiner , PFIRSCH, Frank , MAUDER, Anton , SCHMIDT, Gerhard
IPC分类号： H01L29/861 , H01L29/06 , H01L21/304
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： The invention relates to a high-voltage diode and to a method for the production thereof. According to the invention, only three masking steps are required due to the use of adjustment structures (6) and of a chipping stopper with an edge passivation (12) comprised of a-C:H or a-Si.

2. 发明公开

EP1062700A1 LEISTUNGSHALBLEITERBAUELEMENT MIT MESA-RANDABSCHLUSS 审中-公开
标题翻译： MESA标准EDGINGPROFILE功率半导体元件
公开(公告)号：EP1062700A1
公开(公告)日：2000-12-27
申请号：EP00903516.3
申请日：2000-01-12
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： BARTHELMESS, Reiner , SCHMIDT, Gerhard
IPC分类号： H01L29/06 , H01L29/868 , H01L29/739 , H01L29/744
CPC分类号： H01L29/0661 , H01L29/0615 , H01L29/0834 , H01L29/7396 , H01L29/744 , H01L29/8613
摘要： The invention relates to an asymmetrically-locking power semiconductor structural part. Field stop zones of the same conducting type as in the inner zone are provided in the border area underneath the areas which are etched out (etching shoulders) from the semiconductor body. Said field stop zones are typically connected to the inner zone and to the emitter zone and are adjacent the polish-etched, damage-free surface of the etched-out etching shoulders. The doping concentration of said field stop zones is adjusted in such a way that a decreasing gradient results in the concentration gradient of the doping. Said decreasing gradient extends from the surface of the etching shoulders to the depth of the semiconductor body. According to the invention, the volume breakdown voltage can be secured under extreme conditions even in the bordering area of the power semiconductor structural part. The present invention is especially useful for power semiconductor structural parts which are embodied in a mesa structure, especially in pin diodes, asymmetric thyristors as for example GTOs, IGBTs and the like.

3. 发明授权

EP1307923B1 HOCHVOLT-DIODE UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：高压二极管和方法及其
公开(公告)号：EP1307923B1
公开(公告)日：2005-11-02
申请号：EP01964927.6
申请日：2001-08-24
申请人： eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG , Infineon Technologies AG
发明人： BARTHELMESS, Reiner , PFIRSCH, Frank , MAUDER, Anton , SCHMIDT, Gerhard
IPC分类号： H01L29/861 , H01L29/06 , H01L21/304
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： The invention relates to a high-voltage diode and to a method for the production thereof. According to the invention, only three masking steps are required due to the use of adjustment structures (6) and of a chipping stopper with an edge passivation (12) comprised of a-C:H or a-Si.

4. 发明公开

EP1155561A1 VORRICHTUNG UND VERFAHREN ZUR GERÄUSCHUNTERDRÜCKUNG IN FERNSPRECHEINRICHTUNGEN 有权
标题翻译： DEVICE AND METHOD FOR电话系统降噪
公开(公告)号：EP1155561A1
公开(公告)日：2001-11-21
申请号：EP00908980.6
申请日：2000-02-01
申请人： Infineon Technologies AG
发明人： SCHMIDT, Gerhard
IPC分类号： H04M9/08
CPC分类号： H04M9/082
摘要： The invention relates to a device and a method for suppressing noise in telephone devices, especially devices with hands-free talking equipment, comprising a level discriminator. An additional filter with a group delay of less than 2 ms is placed in the transmitting and receiving path of the telephone device.

5. 发明授权

EP1155561B1 VORRICHTUNG UND VERFAHREN ZUR GERÄUSCHUNTERDRÜCKUNG IN FERNSPRECHEINRICHTUNGEN 有权
标题翻译： DEVICE AND METHOD FOR电话系统降噪
公开(公告)号：EP1155561B1
公开(公告)日：2006-05-24
申请号：EP00908980.6
申请日：2000-02-01
申请人： Infineon Technologies AG
发明人： SCHMIDT, Gerhard
IPC分类号： H04M9/08
CPC分类号： H04M9/082
摘要： The invention relates to a device and a method for suppressing noise in telephone devices, especially devices with hands-free talking equipment, comprising a level discriminator. An additional filter with a group delay of less than 2 ms is placed in the transmitting and receiving path of the telephone device.

6. 发明公开

EP1055318A2 VERFAHREN ZUR VERBESSERUNG DER AKUSTISCHEN RÜCKHÖRDÄMPFUNG IN FREISPRECHEINRICHTUNGEN 审中-公开
标题翻译： VERFAHREN ZUR VERBESSERUNG DER AKUSTISCHENRÜCKHÖTÄMPFUNGIN FREISPRECHEINRICHTUNGEN
公开(公告)号：EP1055318A2
公开(公告)日：2000-11-29
申请号：EP99907267.1
申请日：1999-01-21
申请人： Infineon Technologies AG
发明人： SCHMIDT, Gerhard
IPC分类号： H04M9/08
CPC分类号： H04M9/08
摘要： The present invention relates to a method for improving acoustic noise attenuation, wherein said method uses a combination which comprises an adaptation control for the partial-band echo compensation process as well as a global-band post-filtration for suppressing residual echo in hand-free devices. This method also uses a level balance (22) as well as a controllable frequency-selection echo compensation (28) with partial-band processing. After the frequency-selection echo compensation (28), the outputted signal is submitted to a post-filtration in another frequency-selection filter (30) using an Wiener-equation adjustment algorithm (Wiener filtration). A single control value (increment vector) is used for controlling both the frequency-selection echo compensation and the other filter. This method can thus be implemented with a very reduced amount of calculations so that it can also be used in simple consumer-directed processors.
摘要翻译：本发明涉及一种用于改善声学噪声衰减的方法，其中所述方法使用包括用于部分频带回声补偿处理的自适应控制以及用于抑制免提中的残留回声的全局频带后置滤波的组合设备。该方法还使用电平平衡（22）以及可控频率选择回波补偿（28）和部分频带处理。在频率选择回声补偿（28）之后，使用维纳方程式调整算法（维纳滤波）将输出的信号提交给另一频率选择滤波器（30）中的后置滤波。单个控制值（增量矢量）用于控制频率选择回声补偿和其他滤波器。这种方法因此可以用非常少量的计算来实现，以便它也可以用于简单的消费者指导的处理器。

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