专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06479173B1 Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon 失效
标题翻译：具有结晶碱土金属氮化硅/氧化物与硅的界面的半导体结构
公开(公告)号：US06479173B1
公开(公告)日：2002-11-12
申请号：US09465623
申请日：1999-12-17
申请人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Alexander Demkov , Jerald Allan Hallmark , Jamal Ramdani
发明人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Alexander Demkov , Jerald Allan Hallmark , Jamal Ramdani
IPC分类号： B32B900
CPC分类号： H01L21/3144 , H01L21/31691 , H01L21/318 , H01L28/56
摘要： A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−xOx]2, where M is a metal and X is 0≦X
摘要翻译：半导体结构包括硅衬底（10），一层或多层单晶氧化物或氮化物（26），以及在硅衬底和一层或多层单晶氧化物或氮化物之间的界面（14），界面用与硅的晶格常数匹配的结晶材料制成。该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。在第二个实施方案中，界面包括形式为MSi [N1-xOx] 2的硅原子层，金属和氮和氧的混合物，其中M是金属，X是0 <= X <1。

2. 发明授权

US06291319B1 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon 有权
标题翻译：制造具有与硅稳定的结晶界面的半导体结构的方法
公开(公告)号：US06291319B1
公开(公告)日：2001-09-18
申请号：US09465622
申请日：1999-12-17
申请人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Jamal Ramdani
发明人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Jamal Ramdani
IPC分类号： H01L2120
CPC分类号： H01L21/318 , C30B23/02 , C30B29/16 , C30B29/32 , H01L21/3144 , H01L21/31691 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X
摘要翻译：一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氮和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。在第二个实施方案中，界面包括形式为MSi [N1-Ox] 2的硅，金属以及氮和氧的混合物的原子层，其中M是金属，X是0 <= X <1。

3. 发明授权

US06241821B1 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权
公开(公告)号：US06241821B1
公开(公告)日：2001-06-05
申请号：US09273929
申请日：1999-03-22
申请人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C30B2514
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , C30B29/30
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

4. 发明授权

US06709989B2 Method for fabricating a semiconductor structure including a metal oxide interface with silicon 失效
标题翻译：包括与硅的金属氧化物界面的半导体结构的方法
公开(公告)号：US06709989B2
公开(公告)日：2004-03-23
申请号：US09885409
申请日：2001-06-21
申请人： Jamal Ramdani , Ravindranath Droopad , Zhiyi Yu
发明人： Jamal Ramdani , Ravindranath Droopad , Zhiyi Yu
IPC分类号： H01L2100
CPC分类号： H01L21/3141 , H01L21/02172 , H01L21/0228 , H01L21/02304 , H01L21/316 , H01L21/31604 , H01L21/31616 , H01L21/31645 , H01L21/31691
摘要： A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.
摘要翻译：一种制造半导体结构的方法，包括以下步骤：提供具有表面的硅衬底;通过原子层沉积在硅衬底的表面上形成单晶种子层; 并且通过原子层沉积形成在种子层上的单晶高介电常数氧化物的一层或多层，其中提供衬底包括提供其上形成有氧化硅的衬底，并且其中通过原子层沉积形成晶种层还包括沉积在氧化硅表面上的金属氧化物层，用惰性气体冲洗金属氧化物层，并使金属氧化物和氧化硅反应形成单晶硅酸盐。

5. 发明授权

US06270568B1 Method for fabricating a semiconductor structure with reduced leakage current density 有权
标题翻译：制造漏电流密度降低的半导体结构的方法
公开(公告)号：US06270568B1
公开(公告)日：2001-08-07
申请号：US09354173
申请日：1999-07-15
申请人： Ravindranath Droopad , Zhiyi Yu , Jamal Ramdani
发明人： Ravindranath Droopad , Zhiyi Yu , Jamal Ramdani
IPC分类号： C30B100
CPC分类号： H01L28/56 , H01L21/31662 , H01L21/31683 , H01L21/31691
摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.
摘要翻译：一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 形成包括与所述硅衬底（10）的所述表面（12）相邻的晶种层（18）的界面，使用分子氧形成缓冲层（20）; 以及使用活性氧在缓冲层（20）上形成一层或多层高介电常数氧化物（22）。

6. 发明授权

US06319730B1 Method of fabricating a semiconductor structure including a metal oxide interface 有权
标题翻译：制造包括金属氧化物界面的半导体结构的方法
公开(公告)号：US06319730B1
公开(公告)日：2001-11-20
申请号：US09354522
申请日：1999-07-15
申请人： Jamal Ramdani , Ravindranath Droopad , Zhiyi Yu
发明人： Jamal Ramdani , Ravindranath Droopad , Zhiyi Yu
IPC分类号： H01L2100
CPC分类号： H01L21/31691
摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the surface (12) of the silicon substrate (10); providing a metal oxide (18) on the amorphous silicon dioxide (14); heating the semiconductor structure to form an interface comprising a seed layer (20) adjacent the surface (12) of the silicon substrate (10); and forming one or more layers of a high dielectric constant oxide (22) on the seed layer (20).
摘要翻译：一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底（10）的表面（12）上形成无定形二氧化硅（14）; 在所述无定形二氧化硅（14）上提供金属氧化物（18）; 加热半导体结构以形成包括邻近硅衬底（10）的表面（12）的晶种层（20）的界面; 以及在种子层（20）上形成一层或多层高介电常数氧化物（22）。

7. 发明授权

US06501121B1 Semiconductor structure 失效
标题翻译：半导体结构
公开(公告)号：US06501121B1
公开(公告)日：2002-12-31
申请号：US09712875
申请日：2000-11-15
申请人： Zhiyi Yu , Jamal Ramdani , Ravindranath Droopad
发明人： Zhiyi Yu , Jamal Ramdani , Ravindranath Droopad
IPC分类号： H01L2976
CPC分类号： H01L21/28194 , C30B25/18 , C30B25/20 , H01L21/31691 , H01L29/513 , H01L29/517
摘要： A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.
摘要翻译：用于形成高介电常数器件结构的结构和方法包括单晶半导体衬底和由诸如（A）y（TixM1-x）1-yO3等外延生长氧化物形成的绝缘层，其中A是碱土金属或碱土金属和M的组合是金属或半金属元素。根据本发明形成的半导体器件表现出低的漏电流密度。

8. 发明授权

US06224669B1 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权
标题翻译：制造具有与硅结晶的碱土金属氧化物界面的半导体结构的方法
公开(公告)号：US06224669B1
公开(公告)日：2001-05-01
申请号：US09662390
申请日：2000-09-14
申请人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C03B2514
CPC分类号： H01L21/31691 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/31604 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
摘要翻译：一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氧和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。该界面包括硅，氧和XSiO 2形式的金属的原子层，其中X是金属。

9. 发明申请

US20050056210A1 Heterojunction tunneling diodes and process for fabricating same 有权
标题翻译：异质结隧道二极管及其制造方法
公开(公告)号：US20050056210A1
公开(公告)日：2005-03-17
申请号：US10911624
申请日：2004-08-05
申请人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
发明人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
IPC分类号： H01L21/20 , H01L21/8258 , H01L27/06 , H01L29/88 , C30B1/00 , C30B3/00 , C30B5/00 , C30B23/00 , C30B25/00 , C30B28/02 , C30B28/12 , C30B28/14
CPC分类号： H01L29/882 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L21/8258 , H01L27/0605
摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
摘要翻译：通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

10. 发明授权

US06590236B1 Semiconductor structure for use with high-frequency signals 失效
标题翻译：用于高频信号的半导体结构
公开(公告)号：US06590236B1
公开(公告)日：2003-07-08
申请号：US09624296
申请日：2000-07-24
申请人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
发明人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
IPC分类号： H01L310328
CPC分类号： H01L21/31691 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02505 , H01L21/02521 , Y10S438/90 , Y10S438/933
摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.
摘要翻译：通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。这些半导体材料具有涉及与高频信号通信的应用，包括诸如汽车雷达系统，智能巡航控制系统，防撞系统和汽车导航系统之类的智能交通系统; 以及使用微波或RF信号的电子支付系统，例如用于包括火车票价的各种交通系统的电子费用付费，以及用于汽车的收费公路，停车场和收费桥。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式