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1. 发明授权

US07750323B1 Ion implanter and method for implanting a wafer 有权
标题翻译：离子注入机和植入晶片的方法
公开(公告)号：US07750323B1
公开(公告)日：2010-07-06
申请号：US12465189
申请日：2009-05-13
申请人： Zhimin Wan , Cheng-Hui Shen , Ko-Chuan Jen
发明人： Zhimin Wan , Cheng-Hui Shen , Ko-Chuan Jen
IPC分类号： H01J37/317 , H01J37/08 , H01L21/265
CPC分类号： H01J37/3172 , H01J37/3023 , H01J2237/043 , H01J2237/045 , H01J2237/30461 , H01J2237/30477 , H01J2237/30483
摘要： An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.
摘要翻译：提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。第一掺杂密度大于第二掺杂密度。此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。

2. 发明授权

US07709364B1 Method and apparatus for low temperature ion implantation 有权
标题翻译：低温离子注入的方法和装置
公开(公告)号：US07709364B1
公开(公告)日：2010-05-04
申请号：US12468822
申请日：2009-05-19
申请人： Ko-Chuan Jen , Cheng-Hui Shen
发明人： Ko-Chuan Jen , Cheng-Hui Shen
IPC分类号： H01L21/265
CPC分类号： H01L21/265
摘要： Techniques for low temperature ion implantation are disclosed. After a wafer is cooled to a temperature lower than a temperature of an environment outside of a chamber where the wafer is implanted, the cooled wafer is implanted by projecting an ion beam on the cooled wafer with a temperature adjusting apparatus being operated to cool the wafer simultaneously. Hence, heat produced by the ion beam on the implanted wafer is essentially removed by the temperature adjusting apparatus. Then, after the majority of the implanting process is performed, the temperature adjusting apparatus is turned down or off. Hence, during the residual implanting process, heat produced by the ion beam on the implanted wafer at least partially increases the temperature of the implanted wafer so that, after the ion implantation process is finished, the wafer can be moved into the environment with no, or at least less, water condensation.
摘要翻译：公开了用于低温离子注入的技术。在将晶片冷却到比植入晶片的室外的环境温度低的温度下，通过使温度调节装置工作来冷却晶片来将离子束投射在冷却的晶片上来注入冷却晶片同时。因此，植入的晶片上的离子束产生的热量基本上被温度调节装置除去。然后，在进行大部分植入处理之后，温度调节装置被关闭或关闭。因此，在残留植入过程中，由植入晶片上的离子束产生的热量至少部分地增加了植入的晶片的温度，使得在离子注入工艺完成之后，晶片可以不用移动到环境中，或至少少量的水冷凝。

3. 发明授权

US09009939B2 Method and system for moving wafer during scanning the wafer 有权
标题翻译：在扫描晶片期间移动晶片的方法和系统
公开(公告)号：US09009939B2
公开(公告)日：2015-04-21
申请号：US12479288
申请日：2009-06-05
申请人： Peter Mok , Ko-Chuan Jen , Zhimin Wan
发明人： Peter Mok , Ko-Chuan Jen , Zhimin Wan
IPC分类号： B25B27/14 , H01J37/08 , H01L21/687 , H01J37/20 , H01J37/317 , H01L21/67
CPC分类号： H01L21/68764 , H01J37/20 , H01J37/3171 , H01J2237/20207 , H01J2237/20228 , H01J2237/204 , H01L21/67213 , Y10T29/53961
摘要： A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.
摘要翻译：一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。所提出的系统包括可伸缩臂，保持装置和驱动装置。可伸缩臂的至少一段长度是可调节的。保持装置能够保持晶片并固定在可伸缩臂的特定部分上。此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。此外，所提出的方法包括以下步骤。首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。之后，调整可伸缩的长度。因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

4. 发明授权

US08334517B2 Apparatus for adjusting ion beam by bended bar magnets 有权
标题翻译：用于通过弯曲棒磁体调节离子束的装置
公开(公告)号：US08334517B2
公开(公告)日：2012-12-18
申请号：US13012759
申请日：2011-01-24
申请人： Ko-Chuan Jen , Zhimin Wan
发明人： Ko-Chuan Jen , Zhimin Wan
IPC分类号： H01J3/24 , G21K5/04
CPC分类号： H01J37/3171 , H01J37/141 , H01J2237/24542
摘要： Apparatus and method for adjusting an ion beam between a mass analyzer and a substrate holder. Herein, one or more bended, such as arch-shaped, curved or zigzag shaped, bar magnets are configured to apply one or more magnetic fields to adjust the shape or cross section of an ion beam passing through a space partially surrounded by the one or more bended bar magnets. At least one of the gap width between neighbor bended bar magnets, the curvature of each bended bar magnet and the current flowing through each bended bar magnet may be fixed or adjusted dependently or independently. Therefore, the Lorentz force applied on the ion beam along different directions may be changed in a desired manner, and then the ion beam may be flexibly elongated, compressed or shaped to meet the process requirement.
摘要翻译：用于调整质量分析器和衬底保持器之间的离子束的装置和方法。这里，一个或多个弯曲的，例如拱形，弯曲或锯齿形的棒状磁体被构造成施加一个或多个磁场以调节通过部分地围绕一个或多个磁体的空间的离子束的形状或横截面，更弯曲的酒吧磁铁。相邻的弯曲棒状磁体之间的间隙宽度中的至少一个，每个弯曲棒状磁体的曲率和流过每个弯曲磁体的磁体的电流可以相关地或独立地被固定或调节。因此，沿着不同方向施加在离子束上的洛伦兹力可以以期望的方式改变，然后离子束可以灵活地伸长，压缩或成形以满足工艺要求。

5. 发明授权

US07807986B1 Ion implanter and method for adjusting ion beam 有权
标题翻译：离子注入机和离子束调整方法
公开(公告)号：US07807986B1
公开(公告)日：2010-10-05
申请号：US12473167
申请日：2009-05-27
申请人： Ko-Chuan Jen , York Yang , Zhimin Wan
发明人： Ko-Chuan Jen , York Yang , Zhimin Wan
IPC分类号： H01J37/317 , H01J49/20
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.
摘要翻译：公开了一种用于调节离子束形状的离子注入机和方法。在从分析器磁体单元输出离子束之后，当离子束通过由棒状磁体包围的空间时，使用至少一组棒状磁体来调节离子束的形状。该组磁棒可以在离子束上施加多级磁场。因此，离子束的不同部分将具有不同的变形或变化，因为多级磁场将施加不均匀的力来改变离子的轨迹。此外，该组的每个棒状磁体由一个且仅一个电源供电，使得该组磁棒基本上只能够调整多级磁场的大小。用于实现多级磁场的特定结构和技术不受限制。

6. 发明申请

US20100310341A1 METHOD AND SYSTEM FOR MOVING WAFER DURING SCANNING THE WAFER 有权
标题翻译：在扫描波长期间移动波形的方法和系统
公开(公告)号：US20100310341A1
公开(公告)日：2010-12-09
申请号：US12479288
申请日：2009-06-05
申请人： Peter MOK , Ko-Chuan Jen , Zhimin Wan
发明人： Peter MOK , Ko-Chuan Jen , Zhimin Wan
IPC分类号： H01L21/673
CPC分类号： H01L21/68764 , H01J37/20 , H01J37/3171 , H01J2237/20207 , H01J2237/20228 , H01J2237/204 , H01L21/67213 , Y10T29/53961
摘要： A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.
摘要翻译：一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。所提出的系统包括可伸缩臂，保持装置和驱动装置。可伸缩臂的至少一段长度是可调节的。保持装置能够保持晶片并固定在可伸缩臂的特定部分上。此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。此外，所提出的方法包括以下步骤。首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。之后，调整可伸缩的长度。因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

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