会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Motor assembly
    • 电机总成
    • US09148039B2
    • 2015-09-29
    • US13292419
    • 2011-11-09
    • Zhi Ping FuPo Lun ChengMin Li
    • Zhi Ping FuPo Lun ChengMin Li
    • H02K7/10H02K7/118
    • H02K7/118
    • A motor assembly includes a working part, a synchronous motor having a shaft, and a mechanical coupling joining the working part to the motor. The coupling has two driving teeth fixed relative to the shaft, two driven teeth fixed relative to the working part, and two middle members. The coupling provides a predetermined range of angular movement between the motor and the working part. The middle members are circumferentially distributed between the two driving teeth and between the two driven teeth, thereby each of the middle members is movable by the driving teeth to contact the driven teeth and provides an interference between a driving tooth and a driven tooth to drive the working part.
    • 电动机组件包括工作部件,具有轴的同步电动机和将工作部件连接到电动机的机械联轴器。 联轴器具有相对于轴固定的两个驱动齿,相对于工作部件固定的两个从动齿轮和两个中间部件。 联轴器提供电动机和工作部件之间的角度运动的预定范围。 中间构件周向地分布在两个驱动齿之间和两个从动齿之间,由此每个中间构件可通过驱动齿移动以接触从动齿,并且在驱动齿和从动齿之间提供干涉以驱动 工作部分
    • 6. 发明授权
    • Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
    • 用于制造用于磁阻传感器的高矫顽力硬偏置结构的方法
    • US09034149B2
    • 2015-05-19
    • US12387377
    • 2009-05-01
    • Min ZhengKunliang ZhangMin Li
    • Min ZhengKunliang ZhangMin Li
    • C23C14/58C23C14/14C23C14/02G01R33/09G11B5/31G11B5/39
    • C23C14/5833C23C14/025C23C14/14C23C14/5873G01R33/098G11B5/3163G11B5/3932
    • A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
    • 公开了用于纵向偏置MR传感器中的自由层的硬偏置(HB)结构,其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置(HB)层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。 每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。 蚀刻可以在IBD室中进行,并且在蚀刻表面上产生更高浓度的成核位点,从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。 较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。 在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。
    • 10. 发明授权
    • Interface treatment method for germanium-based device
    • 锗基装置的界面处理方法
    • US08632691B2
    • 2014-01-21
    • US13702562
    • 2012-06-14
    • Ru HuangMin LiXia AnMing LiMeng LinXing Zhang
    • Ru HuangMin LiXia AnMing LiMeng LinXing Zhang
    • B44C1/22C03C15/00C03C25/68C23F1/00C25F3/00
    • H01L21/02052H01L21/306
    • Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on the surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%˜36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%˜10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device.
    • 本文公开了一种锗系器件的接口处理方法,属于超大规模集成(ULSI)电路制造技术领域。 在该方法中,通过使用质量百分比浓度为15%〜36%的浓盐酸溶液除去锗系基板表面上的天然氧化物层,并且通过使表面的悬空键进行钝化处理 使用质量百分比浓度为5%〜10%的稀盐酸溶液,以在表面上形成稳定的钝化层。 该方法为清洗和钝化后在锗基基板表面上沉积高K(高介电常数)栅极电介质提供了良好的基础,提高了栅极电介质和基板之间界面的质量,改善了电气 锗系MOS器件的性能。