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1. 发明授权

US07573587B1 Method and device for continuously measuring silicon island elevation 有权
标题翻译：连续测量硅岛高程的方法和装置
公开(公告)号：US07573587B1
公开(公告)日：2009-08-11
申请号：US12197669
申请日：2008-08-25
申请人： Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
发明人： Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
IPC分类号： G01B11/14 , G01B11/22
CPC分类号： G01B11/24 , C30B15/20 , C30B29/06
摘要： A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
摘要翻译：一种在硅熔化过程中连续测量未熔化的多晶硅岛的高度和形状的方法。该方法包括在硅岛上投射聚焦亮光以在硅岛上产生亮点。该方法还包括通过在熔化过程中跟踪亮点来电子地确定硅岛的高程和形状。

2. 发明授权

US5779791A Process for controlling thermal history of Czochralski-grown silicon 失效
标题翻译：控制Czochralski生长硅热历史的方法
公开(公告)号：US5779791A
公开(公告)日：1998-07-14
申请号：US694157
申请日：1996-08-08
申请人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
发明人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10
摘要： A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the second half of the main body of the ingot. During the pulling of the end-cone of the crystal at a constant rate, the process may be further refined by, either independently or in combination, increasing the heat supplied to the melt, reducing the crystal rotation rate and/or reducing the crucible rotation rate. The second half of the main body of a single crystal silicon ingot grown in accordance with this process exhibits a relatively uniform axial concentration of flow pattern defects and amount of oxygen precipitated.
摘要翻译：一种生产具有与包含在与锭同轴的坩埚中的硅熔体具有均匀热历史的单晶硅锭的切克劳斯基法。在该过程中，锭的端锥的拉伸速率保持在相对恒定的速率，其与锭的主体的后半部分的拉拔速率相当。在以恒定速率拉伸晶体的端锥期间，可以通过独立地或组合地进一步提高该方法，从而增加供应到熔体的热量，降低晶体旋转速率和/或减少坩埚旋转率。根据该方法生长的单晶硅锭的主体的后半部分表现出相对均匀的轴向浓度的流动模式缺陷和氧沉淀量。

3. 发明授权

US06409826B2 Low defect density, self-interstitial dominated silicon 有权
标题翻译：用于生产低缺陷密度，自我间质主导硅的方法，其中V / Go通过控制熔体/固体界面处的热传递来控制
公开(公告)号：US06409826B2
公开(公告)日：2002-06-25
申请号：US09816015
申请日：2001-03-23
申请人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert A. Falster , Joseph C. Holzer , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates a process for the preparation of single crystal silicon, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The process for growing the single crystal silicon including controlling the ratio v/G0, where v is the growth velocity and G0 is the average axial temperature gradient during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. The control of V/G0 accomplished by controlling heat transfer at the melt/solid interface.
摘要翻译：本发明涉及一种制备单晶硅的方法，该方法含有一个没有聚集的固有点缺陷的轴向对称区域。生长单晶硅的过程包括控制比例v / G0，其中v是生长速度，G0是在从凝固到温度的温度范围内晶体的恒定直径部分生长期间的平均轴向温度梯度不低于约1325℃，以及晶体从凝固温度至约1050℃的冷却速率，以形成基本上没有团聚的固有点缺陷的轴对称段。通过控制熔体/固体界面处的热传递来实现V / G0的控制。

4. 发明授权

US4767531A Retractor for permeator or filter module 失效
标题翻译：用于渗透器或过滤器模块的收缩器
公开(公告)号：US4767531A
公开(公告)日：1988-08-30
申请号：US117409
申请日：1987-11-02
申请人： Joseph C. Holzer
发明人： Joseph C. Holzer
IPC分类号： B01D65/00 , B01D13/00
CPC分类号： B01D63/10 , B01D65/00 , B01D2313/02
摘要： A retractor handle is attached to the retraction end of a core wound permeator or filter module for withdrawing the module form its containment housing without requiring special tools. The retraction handle can be a resin pull ring flexibly attached to a flange of a plug that closes the retraction end of the core of the permeator or filter module. The retraction handle can also be a wire pull ring having ends seated in sockets formed in a plugged end region of the core.
摘要翻译：卷收器手柄连接到芯绕式渗透器或过滤器模块的缩回端，用于将模块从其容纳壳体中取出而不需要特殊工具。回缩手柄可以是柔性地附接到塞子的法兰上的树脂拉环，该塞子封闭渗透器或过滤器模块的芯的缩回端。退回手柄也可以是线拉环，其端部位于形成在芯的插入端区域中的插座中。

5. 发明授权

US4356855A Vane holding assembly 失效
标题翻译：叶片举行装配
公开(公告)号：US4356855A
公开(公告)日：1982-11-02
申请号：US282944
申请日：1981-07-13
申请人： Joseph C. Holzer
发明人： Joseph C. Holzer
IPC分类号： E06B9/36 , E06B9/38
CPC分类号： E06B9/367 , Y10S160/90
摘要： A vane holding assembly for suspending a vertical vane formed of a pliable material from a hook of a venetian blind mechanism includes an elongated housing defining a downwardly opening cavity bounded in part by opposite side walls formed with a plurality of ribs projecting inwardly of the cavity, and an elongated vane holding bar for insertion into the cavity between the ribs; the holding bar having an elongated mounting slot for receiving an upper end of a vane in folded relation, whereby as the holding bar is inserted into the housing the opposed ribs engage and frictionally secure the folded vane relative to the holding bar. The housing is additionally provided with an upper opening permitting insertion of the hook within the cavity for connection to the holding bar.
摘要翻译：用于悬挂由柔性材料形成的垂直叶片的叶片保持组件，其由威尼斯式机构的钩子包括限定向下开口的细长壳体，所述细长壳体部分地由形成有从所述空腔向内突出的多个肋的相对侧壁限定，以及用于插入肋之间的空腔中的细长的叶片保持杆; 保持杆具有用于以折叠的关系接收叶片的上端的细长的安装槽，由此当保持杆插入壳体中时，相对的肋接合并相对于保持杆摩擦地固定折叠的叶片。壳体还设置有上部开口，允许将钩插入空腔内以连接到保持杆。

6. 发明授权

US08398765B2 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation 有权
标题翻译：使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状
公开(公告)号：US08398765B2
公开(公告)日：2013-03-19
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B15/02
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译：描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。铸锭在从熔体拉出的晶种上生长。该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。

7. 发明授权

US07229693B2 Low defect density, ideal oxygen precipitating silicon 有权
标题翻译：低缺陷密度，理想的氧沉淀硅
公开(公告)号：US07229693B2
公开(公告)日：2007-06-12
申请号：US11058996
申请日：2005-02-16
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： B32B9/04
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
摘要翻译：本发明涉及一种硅晶片，其在基本上任何任意的电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含基本上为空的轴对称区域的团聚内在点缺陷。

8. 发明授权

US06896728B2 Process for producing low defect density, ideal oxygen precipitating silicon 有权
标题翻译：生产低缺陷密度的工艺，理想的氧沉淀硅
公开(公告)号：US06896728B2
公开(公告)日：2005-05-24
申请号：US10373899
申请日：2003-02-25
申请人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
发明人： Robert J. Falster , Joseph C. Holzer , Marco Cornara , Daniela Gambaro , Massimiliano Olmo , Steve A. Markgraf , Paolo Mutti , Seamus A. McQuaid , Bayard K. Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/00 , C30B33/02 , H01L21/322 , C30B15/04 , C30B25/16
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B29/06 , C30B33/00 , C30B33/02 , Y10T428/21 , Y10T428/249969
摘要： The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process including growing a single crystal silicon ingot from molten silicon, and as part of the growth process, controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C., and (iii) a cooling rate of the crystal from a solidification temperature to about 1,050° C., in order to cause the formation of an axially symmetrical segment which is substantially free of agglomerated intrinsic point defects. A silicon wafer is then sliced from the ingot, subjected to a heat-treatment to form crystal lattice vacancies in the front surface and bulk layers of the wafer and cooled at a rate sufficient to cause a non-uniform vacancy concentration profile in the wafer such that a thermal treatment at a temperature in excess of 750° C., is capable of forming in the wafer a denuded zone in the front surface layer and oxygen clusters or precipitates in the bulk zone with the concentration of the oxygen clusters or precipitates in the bulk layer being primarily dependant upon the concentration of vacancies.
摘要翻译：本发明涉及一种用于制造硅晶片的方法，其在基本上任意的任何电子器件制造工艺的热处理循环期间可以形成氧沉淀物的理想的，不均匀的深度分布，并且还可以包含轴对称区域其基本上没有附聚的固有点缺陷。该方法包括从熔融硅生长单晶硅锭，并且作为生长过程的一部分，控制（i）恒定直径部分生长期间的生长速度v，（ii）平均轴向温度梯度G0 的晶体在从凝固到不低于约1325℃的温度的温度范围内，和（iii）晶体从固化温度至约1050℃的冷却速率，以便形成基本上没有凝聚的固有点缺陷的轴对称段。然后将硅晶片从锭切片，进行热处理以在晶片的前表面和本体层中形成晶格空位，并以足以在晶片中引起不均匀的空位浓度分布的速率冷却，如在超过750℃的温度下的热处理能够在晶片中形成前表面层中的剥离区域，并且在本体区域中的氧簇或沉淀物中的氧簇或沉淀物的浓度在主体层主要取决于空位的浓度。

9. 发明授权

US06605150B2 Low defect density regions of self-interstitial dominated silicon 失效
标题翻译：自我间质主导硅的低缺陷密度区域
公开(公告)号：US06605150B2
公开(公告)日：2003-08-12
申请号：US10135174
申请日：2002-04-30
申请人： Robert J. Falster , Joseph C. Holzer
发明人： Robert J. Falster , Joseph C. Holzer
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to a single crystal silicon, in wafer and ingot form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects. The region extends from a circumferential edge of the wafer or constant diameter region of an ingot, axially inwardly toward a central axis such that the entire wafer, a constant diameter portion of the ingot, or an annular-shaped portion of wafer or ingot is free of agglomerated intrinsic point defects. The present invention further relates to these axially symmetric regions wherein silicon self-interstitials are the predominant intrinsic point detect.
摘要翻译：本发明涉及一种晶圆和晶锭形式的单晶硅，它包含一个没有聚集的固有点缺陷的轴对称区域。该区域从晶片的圆周边缘或锭的恒定直径区域延伸到轴向内向中心轴线，使得整个晶片，锭的恒定直径部分或晶片或锭的环形部分是自由的的团聚内在点缺陷。本发明还涉及这些轴对称区域，其中硅自间隙是主要的固有点检测。

10. 发明授权

US06409827B2 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface 有权
标题翻译：低缺陷密度硅及其生产低缺陷密度硅的方法，其中V / G0通过控制熔体/固体界面处的热传导来控制
公开(公告)号：US06409827B2
公开(公告)日：2002-06-25
申请号：US09833777
申请日：2001-04-12
申请人： Robert J. Falster , Joseph C. Holzer
发明人： Robert J. Falster , Joseph C. Holzer
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process including controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. The control of G0 is accomplished by controlling heat transfer at the melt/solid interface.
摘要翻译：本发明涉及晶锭或晶片形式的单晶硅，其包含不具有附聚固有点缺陷的轴对称区域及其制备方法。该过程包括在硅自填隙移动的温度范围内控制诸如生长速度v，瞬时轴向温度梯度G0和冷却速率的生长条件，以防止这些聚集缺陷的形成。通过控制熔体/固体界面处的热传递来实现G0的控制。

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