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1. 发明授权

US5779791A Process for controlling thermal history of Czochralski-grown silicon 失效
标题翻译：控制Czochralski生长硅热历史的方法
公开(公告)号：US5779791A
公开(公告)日：1998-07-14
申请号：US694157
申请日：1996-08-08
申请人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
发明人： Harold W. Korb , Sadasivam Chandrasekhar , Robert J. Falster , Joseph C. Holzer , Kyong-Min Kim , Steven L. Kimbel , Larry E. Drafall
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10
摘要： A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the second half of the main body of the ingot. During the pulling of the end-cone of the crystal at a constant rate, the process may be further refined by, either independently or in combination, increasing the heat supplied to the melt, reducing the crystal rotation rate and/or reducing the crucible rotation rate. The second half of the main body of a single crystal silicon ingot grown in accordance with this process exhibits a relatively uniform axial concentration of flow pattern defects and amount of oxygen precipitated.
摘要翻译：一种生产具有与包含在与锭同轴的坩埚中的硅熔体具有均匀热历史的单晶硅锭的切克劳斯基法。在该过程中，锭的端锥的拉伸速率保持在相对恒定的速率，其与锭的主体的后半部分的拉拔速率相当。在以恒定速率拉伸晶体的端锥期间，可以通过独立地或组合地进一步提高该方法，从而增加供应到熔体的热量，降低晶体旋转速率和/或减少坩埚旋转率。根据该方法生长的单晶硅锭的主体的后半部分表现出相对均匀的轴向浓度的流动模式缺陷和氧沉淀量。

2. 发明授权

US5980629A Methods for improving zero dislocation yield of single crystals 失效
标题翻译：改善单晶零位错产量的方法
公开(公告)号：US5980629A
公开(公告)日：1999-11-09
申请号：US490473
申请日：1995-06-14
申请人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
发明人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06 , C30B35/00 , C30B15/20
CPC分类号： C30B15/10 , C30B35/002 , Y10T117/10
摘要： A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation and bottom wall each have an inner and an outer surface. A first devitrification promoter is deposited on the inner surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a first layer of substantially devitrified silica forms on the inner surface which is capable of promoting substantially uniform dissolution of the inner surface and reducing the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. A second devitrification promoter is deposited on the outer surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a second layer of substantially devitrified silica forms on the outer surface which is capable of reinforcing the vitreous silica body.
摘要翻译：一种在切克劳斯基法中增强用于容纳熔融半导体材料的坩埚的方法，以及抑制通过该方法生长的单晶内的位错形成。坩埚包括具有底壁和从底壁向上延伸并限定用于保持熔融半导体材料的空腔的玻璃体二氧化硅体。侧壁形成和底壁各自具有内表面和外表面。在低于约600℃的温度下，第一反玻璃化助催化剂沉积在侧壁结构的内表面上。沉积物使得当坩埚被加热至高于600℃时，第一层基本上失透的二氧化硅形成在内表面能够促进内表面的基本上均匀的溶解，并且当从熔融半导体材料中拉出晶体时，减少结晶二氧化硅微粒释放到熔融半导体材料中。在低于约600℃的温度下，第二失透促进剂沉积在侧壁结构的外表面上。沉积物使得当坩埚被加热到600℃以上时，在第二层基本上失透的二氧化硅能够增强二氧化硅玻璃体的外表面。

3. 发明授权

US06447601B1 Crystal puller and method for growing monocrystalline silicon ingots 失效
标题翻译：晶体拉丝机和生长单晶硅锭的方法
公开(公告)号：US06447601B1
公开(公告)日：2002-09-10
申请号：US09811982
申请日：2001-03-19
申请人： Richard Joseph Phillips , Larry E. Drafall , Kirk D. McCallum
发明人： Richard Joseph Phillips , Larry E. Drafall , Kirk D. McCallum
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14
摘要： A crystal puller for growing monocrystalline silicon ingots according to the Czochralski method includes a housing and a crucible in the housing for containing molten silicon. The crucible has a side wall having a transmittance of at least about 80% generally throughout a light wavelength range of about 500 to about 2500 nanometers. A pulling mechanism is included for pulling a growing ingot upward from the molten silicon. In operation, polycrystalline silicon is charged to the crucible and the crucible is heated to melt the polycrystalline silicon for forming a molten silicon melt in the crucible. A seed crystal is then brought into contact with the molten silicon in the crucible and a monocrystalline silicon ingot is pulled up from the molten silicon.
摘要翻译：用于根据切克劳斯基（Czochralski）方法生长的单晶硅锭的晶体拉拔器包括壳体和用于容纳熔融硅的壳体中的坩埚。坩埚具有通常在约500至约2500纳米的光波长范围内具有至少约80％透射率的侧壁。包括用于从熔融硅向上拉动生长的锭的牵引机构。在操作中，将多晶硅加入到坩埚中，并且加热坩埚以熔化多晶硅以在坩埚中形成熔融硅熔体。然后将晶种与坩埚中的熔融硅接触，并从熔融硅中提取单晶硅锭。

4. 发明授权

US5976247A Surface-treated crucibles for improved zero dislocation performance 失效
标题翻译：经表面处理的坩埚可提高零位错性能
公开(公告)号：US5976247A
公开(公告)日：1999-11-02
申请号：US490465
申请日：1995-06-14
申请人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
发明人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
IPC分类号： C30B29/06 , C03C17/02 , C03C17/34 , C30B15/10 , C30B35/00
CPC分类号： C03C17/3417 , C03C17/02 , C30B15/10 , C30B35/002 , C03C2217/213 , Y10S65/08 , Y10T117/10 , Y10T117/1052
摘要： A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process. The first substantially devitrified silica layer is such that it promotes uniform dissolution of the inner surface and in so doing significantly reduces the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. The second substantially devitrified silica layer is such that it reinforces the vitreous silica body.
摘要翻译：坩埚，其中半导体材料在晶体生长过程中被熔化和保持。坩埚包括具有底壁和从底壁向上延伸并限定用于保持熔融半导体材料的空腔的玻璃体二氧化硅体。侧壁形成具有内表面和外表面。分布在侧壁结构的内表面上的第一失透促进剂，使得当半导体材料在坩埚中熔化时，在与熔融半导体材料接触的坩埚的内表面上形成基本上失透的二氧化硅的第一层在晶体生长过程中。分布在侧壁形状的外表面上的第二失透促进剂，使得当晶体生长过程中半导体材料在坩埚中熔化时，在坩埚的外表面上形成第二层基本上失透的二氧化硅。第一基本上反玻璃化的二氧化硅层是促进内表面的均匀溶解，并且在这样做时，晶体从熔融半导体材料中拉出时，显着地减少了结晶二氧化硅微粒释放到熔融半导体材料中。第二基本上反玻璃化的二氧化硅层使得它增强了二氧化硅玻璃体。

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