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1. 发明授权

US06835631B1 Method to enhance inductor Q factor by forming air gaps below inductors 有权
标题翻译：通过在电感器下方形成气隙来增强电感Q因子的方法
公开(公告)号：US06835631B1
公开(公告)日：2004-12-28
申请号：US10718193
申请日：2003-11-20
申请人： Zheng Jia Zhen , Sanford Chu , Ng Chit Hwei , Lap Chan , Purakh Raj Verma
发明人： Zheng Jia Zhen , Sanford Chu , Ng Chit Hwei , Lap Chan , Purakh Raj Verma
IPC分类号： H01L2120
CPC分类号： H01L28/10 , H01L23/5222 , H01L23/5227 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of enhancing inductor performance comprising the following steps. A structure having a first oxide layer formed thereover is provided. A lower low-k dielectric layer is formed over the first oxide layer. A second oxide layer is formed over the lower low-k dielectric layer. The second oxide layer is patterned to form at least one hole there through exposing a portion of the lower low-k dielectric layer. Etching through the exposed portion of the lower low-k dielectric layer and into the lower low-k dielectric layer to from at least one respective air gap within the etched lower low-k dielectric layer. An upper low-k dielectric layer is formed over the patterned second oxide layer. At least one inductor is formed within the upper low-k dielectric layer and over the at least one air gap whereby the performance of the inductor is enhanced.
摘要翻译：一种提高电感器性能的方法，包括以下步骤。提供一种其上形成有第一氧化物层的结构。在第一氧化物层上形成较低的低k电介质层。在下部低k电介质层上形成第二氧化物层。图案化第二氧化物层以通过暴露下部低k电介质层的一部分而在其中形成至少一个孔。通过下部低k介电层的暴露部分蚀刻到下部低k电介质层中，从而蚀刻下蚀刻的低k介电层内的至少一个相应的气隙。在图案化的第二氧化物层上形成上部低k电介质层。至少一个电感器形成在上部低k电介质层内并在至少一个气隙上形成，从而提高了电感器的性能。

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