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    • 3. 发明授权
    • Devices and methods for tuning an inductor
    • 用于调谐电感的装置和方法
    • US08922309B1
    • 2014-12-30
    • US13274894
    • 2011-10-17
    • Jing JingShuxian Wu
    • Jing JingShuxian Wu
    • H01F30/14H01F21/08H01F21/02
    • H01L23/5227H01F21/12H01F2021/125H01L23/5225H01L2924/0002H01L2924/00
    • An inductive device includes an inductor having an inductance associated therewith, and a tuning ring disposed around the inductor. The tuning ring has an inductance associated therewith, wherein the tuning ring is coupled to the inductor to establish a mutual inductance between the tuning ring and the inductor. The inductance of the inductor, the inductance of the tuning ring, and the mutual inductance between the tuning ring and the inductor contribute to a total inductance of the inductive device. The tuning ring is configurable, and is selectively configured to achieve a certain value for the mutual inductance, and a certain value for the inductance of the tuning ring, without changing a footprint of the tuning ring.
    • 感应装置包括具有与其相关的电感的电感器和设置在电感器周围的调谐环。 调谐环具有与其相关联的电感,其中调谐环耦合到电感器以在调谐环和电感器之间建立互感。 电感的电感,调谐环的电感以及调谐环和电感之间的互感有助于感应装置的总电感。 调谐环是可配置的,并且被选择性地配置为实现互感的一定值,以及调谐环的电感的一定值,而不改变调谐环的占空比。
    • 5. 发明授权
    • Thin film capacitors
    • 薄膜电容器
    • US06404615B1
    • 2002-06-11
    • US09505491
    • 2000-02-16
    • Sunil D. WijeyesekeraJing JingDonald C. BensonTeruo Sasagawa
    • Sunil D. WijeyesekeraJing JingDonald C. BensonTeruo Sasagawa
    • H01G4228
    • H01L28/40H01L27/0805
    • A thin film capacitor and methods for forming the same are described. The capacitor has dielectric layer with a first face, a second face, and at least one edge. The first terminal of the capacitor covers at least a portion of the first face of the dielectric layer, covers at least a portion of one edge of the dielectric layer, and covers a portion of the second face of the dielectric layer. The second terminal of the capacitor covers a portion of the second face of the dielectric layer and does not contact the first terminal. A method for forming the thin film capacitor includes hard baking photoresist at an elevated temperature and anodizing an exposed metal area using the photoresist as a mask.
    • 对薄膜电容器及其形成方法进行说明。 电容器具有具有第一面,第二面和至少一个边缘的电介质层。 电容器的第一端子覆盖电介质层的第一面的至少一部分,覆盖电介质层的一个边缘的至少一部分,并且覆盖电介质层的第二面的一部分。 电容器的第二端子覆盖电介质层的第二面的一部分并且不接触第一端子。 用于形成薄膜电容器的方法包括在高温下的硬烘烤光致抗蚀剂,并且使用光致抗蚀剂作为掩模阳极氧化暴露的金属区域。