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1. 发明申请

US20080017797A1 PATTERN INSPECTION AND MEASUREMENT APPARATUS 审中-公开
标题翻译：图案检查和测量装置
公开(公告)号：US20080017797A1
公开(公告)日：2008-01-24
申请号：US11779140
申请日：2007-07-17
申请人： Zhaohui CHENG , Hiroshi Makino , Kenji Tanimoto , Seiko Omori
发明人： Zhaohui CHENG , Hiroshi Makino , Kenji Tanimoto , Seiko Omori
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , H01J37/244 , H01J37/266 , H01J2237/0492 , H01J2237/04924 , H01J2237/21 , H01J2237/221 , H01J2237/24564 , H01J2237/24571 , H01J2237/2816 , H01J2237/2817
摘要： Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter. An SEM image always free of shading caused by the failure of the detection of a secondary signal in the field of view can be acquired by providing a unit that changes the setting of the lens according to the optical condition such as retarding voltage and an electrification control electrode of the primary electron beam.
摘要翻译：模式检查和测量技术，其中由于一次电子束的光学条件的变化或与在一次电子束的表面中的一次电子束的行进方向垂直的电场的发生而检测到次级信号的故障晶片被最小化，可以获得SN比高且在视场中几乎不具有阴影的SEM图像，并且能够以高精度测量测量对象的尺寸和构造以及检查缺陷，重复性高。用于会聚二次信号的透镜安装在一次电子束的行进方向与维纳滤波器与一次电子束空间分离的二次信号的过程的位置。可以通过提供根据诸如延迟电压和通电控制的光学条件来改变透镜的设置的单元来获得始终没有由视场中的次级信号的检测失败引起的阴影的SEM图像一次电子束的电极。

2. 发明申请

US20090179151A1 APPARATUS AND METHOD FOR INSPECTION AND MEASUREMENT 有权
标题翻译：装置和方法进行检查和测量
公开(公告)号：US20090179151A1
公开(公告)日：2009-07-16
申请号：US12349059
申请日：2009-01-06
申请人： Zhaohui CHENG , Natsuki TSUNO
发明人： Zhaohui CHENG , Natsuki TSUNO
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/24475 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592 , H01J2237/2817
摘要： An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.
摘要翻译：带电控制电极B安装在充电控制电极A的测量或检查样品侧，并根据试样的带电状态从充电控制电极B的带电控制电极控制部分施加恒定电压，由此在检查之前形成的试样表面的带电状态和势垒的变化被抑制。由充电控制电极施加延迟电位，并且通电控制电极B设置在调节到与试样相同电位的充电控制电极A的下方。结果，可以调节从诸如照射一次电子束的晶片等试样的二次电子返回到试样的量，从而可以稳定地维持高灵敏度的检查条件检查。

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