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1. 发明授权

US09830524B2 Method for estimating shape before shrink and CD-SEM apparatus 有权
公开(公告)号：US09830524B2
公开(公告)日：2017-11-28
申请号：US14239803
申请日：2012-05-24
申请人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
发明人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
IPC分类号： G01N23/22 , G06K9/46 , H01J37/317 , G01B15/04 , B82Y10/00 , B82Y40/00 , G06T7/00 , H01L21/66
CPC分类号： G06K9/4604 , B82Y10/00 , B82Y40/00 , G01B15/04 , G01N23/22 , G06T7/0004 , H01J37/3174 , H01J2237/221 , H01J2237/226 , H01J2237/2816 , H01J2237/31754 , H01J2237/31796 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

2. 发明授权

US07928384B2 Localized static charge distribution precision measurement method and device 有权
标题翻译：局部静电分配精度测量方法及装置
公开(公告)号：US07928384B2
公开(公告)日：2011-04-19
申请号：US12222577
申请日：2008-08-12
申请人： Zhaohui Cheng , Tasuku Yano , Seiko Omori
发明人： Zhaohui Cheng , Tasuku Yano , Seiko Omori
IPC分类号： G01N23/00
CPC分类号： G01N23/04
摘要： A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.
摘要翻译：一种带电粒子束装置，包括用于测量样品上的局部静电荷的功能。初级带电粒子束扫描以镜像状态定位的样本以获取图像。所获取的图像可以是样本的图像，或者可以是带电粒子光学系统中的结构成分的图像。将获取的图像与标准样品图像进行比较，并测量局部静电荷。

3. 发明授权

US07714288B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07714288B2
公开(公告)日：2010-05-11
申请号：US12149218
申请日：2008-04-29
申请人： Tasuku Yano , Zhaohui Cheng , Takashi Furukawa , Osamu Nasu
发明人： Tasuku Yano , Zhaohui Cheng , Takashi Furukawa , Osamu Nasu
IPC分类号： G21K7/00 , G21G5/00 , G01N23/00 , H01J3/14
CPC分类号： G01N23/225 , H01J37/026 , H01J37/248 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/28
摘要： Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.
摘要翻译：当多个帧被一体化以防止在带电粒子束装置中的样品的预定区域的图像时，防止了由一次带电粒子束的照射引起的样品表面影响的电气化。用来自电子枪的一次电子束扫描样品的预定区域，并且用检测器检测产生的二次电子并产生并整合多个帧以获得预定区域的图像。如果通过检测器的检测信号确定当产生多个帧时，预定区域的通电量变为规定值，则在生成多个帧之前将电去除电压施加到升压电极以去除或减少通电，下一帧。因此，可以提高通过对多个帧进行积分而获得的图像的信噪比。

4. 发明授权

US06952105B2 Inspection method and apparatus for circuit pattern of resist material 失效
标题翻译：抗蚀材料电路图案检测方法及装置
公开(公告)号：US06952105B2
公开(公告)日：2005-10-04
申请号：US10620702
申请日：2003-07-17
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： H01L21/66 , G01N23/00 , G01R31/302 , G01R31/305 , G06T1/00 , H01J37/04 , H01J37/147 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.
摘要翻译：取决于材料种类的图案检查技术可以减少材料收缩时的损伤，当材料容易受到由电子束照射引起的收缩和变质等损害时。这是通过用一次电子束扫描样品，检测产生的二次电子或从半导体器件反射的电子，或者前者和后面的电子，并将电子转换为信号，并将信号变换为图像，显示图像，并检测样品的电路图案中的缺陷点。电子束的照射密度（每单位面积的剂量）根据检查中的电路图案的材料的种类和检查条件进行监测和限制，并且在电子束照射期间对材料的收缩和变质等损害，减少到允许范围。

5. 发明授权

US09991092B2 Scanning electron microscope and sample observation method 有权
公开(公告)号：US09991092B2
公开(公告)日：2018-06-05
申请号：US13387183
申请日：2010-07-30
申请人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
发明人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
IPC分类号： G01N23/00 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

6. 发明申请

US20150036914A1 METHOD FOR ESTIMATING SHAPE BEFORE SHRINK AND CD-SEM APPARATUS 有权
标题翻译：在收缩和CD-SEM装置之前估算形状的方法
公开(公告)号：US20150036914A1
公开(公告)日：2015-02-05
申请号：US14239803
申请日：2012-05-24
申请人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
发明人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
IPC分类号： G06K9/46 , G06T7/00
CPC分类号： G06K9/4604 , B82Y10/00 , B82Y40/00 , G01B15/04 , G01N23/22 , G06T7/0004 , H01J37/3174 , H01J2237/221 , H01J2237/226 , H01J2237/2816 , H01J2237/31754 , H01J2237/31796 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).
摘要翻译：在本发明中，在测量时，使用CD-SEM，当用电子束照射时收缩的抗蚀剂的长度为了在收缩之前高精度地估计抗蚀剂的形状和尺寸，收缩数据库预先准备了各种图案，所述收缩数据库包含在电子束照射之前获得的横截面形状数据，横截面形状数据组和CD-SEM图像数据组，其在各种电子束照射条件下获得，以及基于这样的数据和数据组的模型，并且获得要测量的抗蚀剂图案的CD-SEM图像（S102），然后将CD-SEM图像和收缩数据库中的数据彼此进行比较（S103 ），并且估计并输出收缩前的图案的形状和尺寸（S104）。

7. 发明授权

US08207513B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US08207513B2
公开(公告)日：2012-06-26
申请号：US12615955
申请日：2009-11-10
申请人： Yuko Sasaki , Yasuhiro Gunji , Zhaohui Cheng
发明人： Yuko Sasaki , Yasuhiro Gunji , Zhaohui Cheng
IPC分类号： G21K5/10
CPC分类号： H01J37/28 , H01J37/153 , H01J37/21 , H01J37/222 , H01J37/265 , H01J2237/141 , H01J2237/1532 , H01J2237/21 , H01J2237/221 , H01J2237/2817
摘要： A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.
摘要翻译：提供具有高分辨率和宽扫描区域（观察视场）的带电粒子束装置。该装置具有用于调节焦点的单元，用于调节散光的单元，用于控制和检测扫描位置的单元，以及控制器，用于与扫描位置互锁地控制焦点调节和像散调整，由此确保相容性在高分辨率和广域的观察视野之间。

8. 发明申请

US20120153145A1 SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD 有权
标题翻译：扫描电子显微镜和样品观察方法
公开(公告)号：US20120153145A1
公开(公告)日：2012-06-21
申请号：US13387183
申请日：2010-07-30
申请人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
发明人： Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.
摘要翻译：本发明的扫描电子显微镜通过利用电子束扫描样品上的二维区域形成扫描区域的图像时，根据样品改变扫描线密度来进行扫描，或者设置有GUI 具有样本信息输入装置，其输入与样本有关的信息和根据输入显示推荐的扫描条件的显示装置，并通过选择推荐的扫描条件，根据样本以扫描线密度进行扫描。结果，在使用扫描电子显微镜观察的情况下，能够改善二维图案的轮廓的对比度并抑制由初级带电粒子辐射引起的充电的影响并抑制阴影的合适的扫描装置，并且通过提高检测率的二次电子和扫描方法。

9. 发明申请

US20110303843A1 SAMPLE OBSERVING METHOD AND SCANNING ELECTRON MICROSCOPE 有权
标题翻译：样品观察方法和扫描电子显微镜
公开(公告)号：US20110303843A1
公开(公告)日：2011-12-15
申请号：US13148864
申请日：2010-02-09
申请人： Seiko Omori , Zhaohui Cheng , Hideyuki Kazumi
发明人： Seiko Omori , Zhaohui Cheng , Hideyuki Kazumi
IPC分类号： G01N23/04 , H01J37/28
CPC分类号： G01B15/04 , H01J37/222 , H01J37/28 , H01J2237/24592 , H01J2237/2817
摘要： Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.
摘要翻译：提供了一种对吞吐量的影响最小化的样本观察方法，即使在复杂的LSI图案中也可以以高精度获得图案轮廓，而与电子束的扫描方向无关。在样本观察方法中，关于要观察的图案的边缘（708）判断与电子束的扫描方向（707）平行的边缘的存在或不存在（S702）。如果存在边缘，则将图案边缘附近的区域指定为局部剂量前区域（709）（S703）; 执行电子束的局部预先剂量，使得初始充电状态被控制为不将通过将图像捕获时的电子束的照射产生的二次电子返回到样品的表面。

10. 发明授权

US07652248B2 Inspection apparatus and inspection method 有权
标题翻译：检验仪器和检验方法
公开(公告)号：US07652248B2
公开(公告)日：2010-01-26
申请号：US11692263
申请日：2007-03-28
申请人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
发明人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/265 , H01J2237/047 , H01J2237/0473 , H01J2237/0475 , H01J2237/2817
摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.
摘要翻译：当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。

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