专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5726073A Compound stage MEM actuator suspended for multidimensional motion 失效
公开(公告)号：US5726073A
公开(公告)日：1998-03-10
申请号：US588919
申请日：1996-01-19
申请人： Z. Lisa Zhang , Noel C. MacDonald
发明人： Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , B81B3/00 , H02N1/00 , H01L21/465
CPC分类号： H02N1/008 , B81B3/0021 , B81B3/0062 , B81C1/0019 , B82Y15/00 , B81B2201/11 , B81B2203/053 , B81B2203/055 , B81B2207/07
摘要： A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.

2. 发明授权

US5426070A Microstructures and high temperature isolation process for fabrication thereof 失效
标题翻译：微结构和高温隔离制程
公开(公告)号：US5426070A
公开(公告)日：1995-06-20
申请号：US67089
申请日：1993-05-26
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , G01P15/08 , H01L21/44
CPC分类号： B81C1/0015 , G01P15/0802
摘要： A method of fabricating released microelectromechanical and microoptomechanical structures having electrically isolating segments from single crystal silicon includes thermal oxidation steps. The structures are defined using a single mask patterning process, and the structure is partially thermally oxidized. This is followed by a second masking step which is used to define segments to be completely thermally oxidized, and a second oxidation step completes the fabrication of the isolating segment. Thereafter the structure is released from the underlying substrate.
摘要翻译：制造具有与单晶硅电隔离段的释放的微机电和微机电结构的方法包括热氧化步骤。使用单个掩模图案化工艺限定结构，并且该结构被部分热氧化。之后是第二掩蔽步骤，其用于限定待完全热氧化的段，第二氧化步骤完成隔离段的制造。此后，结构从下面的基底释放。

3. 发明授权

US6051866A Microstructures and single mask, single-crystal process for fabrication thereof 有权
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US6051866A
公开(公告)日：2000-04-18
申请号：US132254
申请日：1998-08-11
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

4. 发明授权

US5846849A Microstructure and single mask, single-crystal process for fabrication thereof 失效
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US5846849A
公开(公告)日：1998-12-08
申请号：US804826
申请日：1997-02-24
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L21/44
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

5. 发明授权

US5847454A Electrically isolated released microstructures 失效
标题翻译：电隔离释放微结构
公开(公告)号：US5847454A
公开(公告)日：1998-12-08
申请号：US310336
申请日：1994-09-22
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L23/48 , B44C1/22 , H01L23/52
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

6. 发明授权

US5844251A High aspect ratio probes with self-aligned control electrodes 失效
标题翻译：具有自对准控制电极的高纵横比探针
公开(公告)号：US5844251A
公开(公告)日：1998-12-01
申请号：US573308
申请日：1995-12-15
申请人： Noel C. MacDonald , Z. Lisa Zhang
发明人： Noel C. MacDonald , Z. Lisa Zhang
IPC分类号： B81B1/00 , H01L21/00 , H01L29/06
CPC分类号： G01Q60/04 , B82Y35/00 , G01Q60/16 , G01Q60/38 , G01Q70/10 , Y10S977/878
摘要： A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.
摘要翻译：使用单晶反应蚀刻和金属化工艺制造高纵横比场致发射或隧道探针。所产生的场致发射探针具有自对准单晶硅尖尖，用于尖端的高纵横比支撑柱，以及围绕与尖端电隔离的集成的自对准栅电极。栅电极与尖端间隔200至800nm，并且金属硅化物或金属可以施加在尖端上，以在低操作栅极电压下实现发射极导通。所得到的尖端具有高的纵横比用于探测各种表面现象，并且为此目的，探针可以安装在三维平移机上或集成在三维平移机中，用于穿过表面进行机械扫描，并通过调整高度来进行聚焦发射体在表面以上。

7. 发明授权

US5506175A Method of forming compound stage MEM actuator suspended for multidimensional motion 失效
标题翻译：形成用于多维运动的复合级MEM致动器的形成方法
公开(公告)号：US5506175A
公开(公告)日：1996-04-09
申请号：US443331
申请日：1995-05-17
申请人： Z. Lisa Zhang , Noel C. MacDonald
发明人： Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , B81B3/00 , H02N1/00 , H01L21/465
CPC分类号： H02N1/008 , B81B3/0021 , B81B3/0062 , B81C1/0019 , B82Y15/00 , B81B2201/11 , B81B2203/053 , B81B2203/055 , B81B2207/07
摘要： A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.
摘要翻译：由亚微米悬浮单晶硅光束制造能够沿x，y和z轴运动的微机电复合级微致动器组件，用于定位和扫描集成的机电传感器和致动器。该微型致动器包括用于机械地支撑中央级并用于提供与微型致动器的部件的电连接以及由此承载的装置的互连系统。使用改进的单晶反应蚀刻和金属化工艺制造微致动器，其包括利用设备的选定区域的热氧化的隔离工艺，以提供绝缘段，其限定从外部电路到致动器部件的导电路径以及限定门控的微电子器件由致动器承载的场致发射体。

8. 发明授权

US6027951A Method of making high aspect ratio probes with self-aligned control electrodes 有权
标题翻译：制作具有自对准控制电极的高纵横比探针的方法
公开(公告)号：US6027951A
公开(公告)日：2000-02-22
申请号：US135176
申请日：1998-08-18
申请人： Noel C. MacDonald , Z. Lisa Zhang
发明人： Noel C. MacDonald , Z. Lisa Zhang
IPC分类号： B81B1/00 , H01L21/00 , H01L29/06
CPC分类号： G01Q60/04 , B82Y35/00 , G01Q60/16 , G01Q60/38 , G01Q70/10 , Y10S977/878
摘要： A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.
摘要翻译：使用单晶反应蚀刻和金属化工艺制造高纵横比场致发射或隧道探针。所产生的场致发射探针具有自对准单晶硅尖尖，用于尖端的高纵横比支撑柱，以及围绕与尖端电隔离的集成的自对准栅电极。栅电极与尖端间隔200至800nm，并且金属硅化物或金属可以施加在尖端上，以在低操作栅极电压下实现发射极导通。所得到的尖端具有高的纵横比用于探测各种表面现象，并且为此目的，探针可以安装在三维平移机上或集成在三维平移机中，用于穿过表面进行机械扫描，并通过调整高度来进行聚焦发射体在表面以上。

9. 发明授权

US5719073A Microstructures and single mask, single-crystal process for fabrication thereof 失效
公开(公告)号：US5719073A
公开(公告)日：1998-02-17
申请号：US312797
申请日：1994-09-27
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L21/44
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.

10. 发明授权

US5536988A Compound stage MEM actuator suspended for multidimensional motion 失效
标题翻译：复合级MEM执行器用于多维运动
公开(公告)号：US5536988A
公开(公告)日：1996-07-16
申请号：US69725
申请日：1993-06-01
申请人： Z. Lisa Zhang , Noel C. MacDonald
发明人： Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： B81B1/00 , B81B3/00 , H02N1/00
CPC分类号： H02N1/008 , B81B3/0021 , B81B3/0062 , B81C1/0019 , B82Y15/00 , B81B2201/11 , B81B2203/053 , B81B2203/055 , B81B2207/07
摘要： A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.
摘要翻译：由亚微米悬浮单晶硅光束制造能够沿x，y和z轴运动的微机电复合级微致动器组件，用于定位和扫描集成的机电传感器和致动器。该微型致动器包括用于机械地支撑中央级并用于提供与微型致动器的部件的电连接以及由此承载的装置的互连系统。使用改进的单晶反应蚀刻和金属化工艺制造微致动器，其包括利用设备的选定区域的热氧化的隔离工艺，以提供绝缘段，其限定从外部电路到致动器部件的导电路径以及限定门控的微电子器件由致动器承载的场致发射体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式