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    • 1. 发明授权
    • Method for predicting the behavior of dopant and defect components
    • 用于预测掺杂剂和缺陷组分的行为的方法
    • US07074270B2
    • 2006-07-11
    • US10406033
    • 2003-04-02
    • Yuzuru SatoMasamitsu UeharaGyeong S. HwangWilliam A. Goddard, III
    • Yuzuru SatoMasamitsu UeharaGyeong S. HwangWilliam A. Goddard, III
    • C30B1/00
    • H01L21/26513G06F17/5018G06F2217/10H01L21/26566H01L21/2658
    • Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and In represent interstitial silicon and a cluster of n I's, respectively.
    • 用于预测由衬底材料形成的衬底晶格中的掺杂剂和缺陷组分的行为的技术可以在硬件或软件中实现。 获得可在一个或多个材料加工操作期间发生的一组微观工艺的基本数据。 这样的数据可以包括表示微观过程集合中的过程的动力学的数据,以及材料处理操作中可能状态的能量学和结构。 从基础数据和一组外部条件,预测衬底晶格中的掺杂剂和缺陷组分的分布。 一个或多个快速分量的分布各自通过在该快速分量达到其伪稳态之前的时间段内计算特定快速分量的浓度来求解第一关系并计算该时间段之后该快分量的浓度 通过解决基于其他成分的第二关系,快速成分的伪稳定状态是通过其他成分的浓度来确定该快速成分的浓度的状态。 除了Bs,BsI,BsI2,BsI3,BsBi,BsBi,BsBi,BsBi, 2,BsBi 3,BsBiI,BsBi1 2,Bs2 Bi,Bs2 Bi, 通过求解第一关系来计算退火后硼的分布,其中Bs和Bi分别代表取代硼和间隙硼,并且 I和I分别表示间隙硅和n I的簇。
    • 2. 发明申请
    • Method for predicting the behavior of dopant and defect components
    • 用于预测掺杂剂和缺陷组分的行为的方法
    • US20050054197A1
    • 2005-03-10
    • US10406033
    • 2003-04-02
    • Yuzuru SatoMasamitsu UeharaGyeong HwangWilliam Goddard
    • Yuzuru SatoMasamitsu UeharaGyeong HwangWilliam Goddard
    • H01L21/22G06F17/50H01L21/265H01L21/302H01L21/461
    • H01L21/26513G06F17/5018G06F2217/10H01L21/26566H01L21/2658
    • Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of Bs3Bi, in addition to the distributions of Bs, BsI, BsI2, BsI3, BsBi, BsBi2, BsBi3, BsBiI, BsBiI2, Bs2Bi, Bs2Bi2, I and In, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and In represent interstitial silicon and a cluster of n I's, respectively.
    • 用于预测由衬底材料形成的衬底晶格中的掺杂剂和缺陷组分的行为的技术可以在硬件或软件中实现。 获得可在一个或多个材料加工操作期间发生的一组微观工艺的基本数据。 这样的数据可以包括表示微观过程集合中的过程的动力学的数据,以及材料处理操作中可能状态的能量学和结构。 从基础数据和一组外部条件,预测衬底晶格中的掺杂剂和缺陷组分的分布。 一个或多个快速分量的分布各自通过在该快速分量达到其伪稳态之前的时间段内计算特定快速分量的浓度来求解第一关系并计算该时间段之后该快分量的浓度 通过解决基于其他成分的第二关系,快速成分的伪稳定状态是通过其他成分的浓度来确定该快速成分的浓度的状态。 通过求解第一关系来计算Bs3Bi的分布,除了Bs,BsI,BsI2,BsI3,BsBi,BsBi2,BsBi3,BsBiI,BsBiI2,Bs2Bi,Bs2Bi2,I和In的分布外,还分布了硼 退火后,Bs和Bi分别表示取代硼和间隙硼,I和In分别表示间隙硅和n I簇。
    • 5. 发明授权
    • Method for driving a liquid crystal element
    • 驱动液晶元件的方法
    • US4850676A
    • 1989-07-25
    • US34176
    • 1987-04-22
    • Minoru YazakiYuzuru SatoAkihiko Ito
    • Minoru YazakiYuzuru SatoAkihiko Ito
    • G09G3/20G09G3/36
    • G09G3/3629G09G3/3681G09G3/3692G09G2310/06G09G2310/061G09G3/2011G09G3/2014
    • A method and circuits for multiplex driving of a liquid crystal element employing a ferroelectric liquid crystal therein. The method includes the step of applying a voltage pulse having an amplitude and a pulse width which exceeds a saturation voltage during a first half of a selecting term or a non-selecting term just before the selecting term to place the liquid crystal element in an "ON" or "OFF" state. The method also includes the step of applying the voltage pulse having a opposite polarity with respect to said voltage pulse and having an amplitude and a pulse width smaller than the threshhold voltage or exceeding the saturation voltage so that it is selected in order to maintain or to change the "ON" or "OFF" state. Further, it includes the step of rendering the average of a DC component which is applied to the liquid crystal element to zero by the method for applying a voltage pulse. Thus, although the ferroelectric liquid crystal including a character that is is aligned in the different state, that is, "ON" or "OFF", the ferroelectric liquid crystal is multiplex driven by the polarity of the applied voltage pulse haivng more than saturation voltage regardless of the on-off pattern, thereby rendering the average of the applied voltage equal to zero. Namely, the present invention provides the improved liquid crystal element in which the deterioration of the liquid crystal element can be prevented and the life thereof can be extended.
    • PCT No.PCT / JP86 / 00396 Sec。 371日期1987年3月22日 102(e)日本1987年4月22日PCT申请日1986年7月28日。一种使用其中的铁电液晶的液晶元件进行多路驱动的方法和电路。 该方法包括以下步骤:在选择项的前半部分期间施加具有超过饱和电压的幅度和脉冲宽度的电压脉冲,或者在选择项之前的非选择项,将液晶元件置于“ ON“或”OFF“状态。 该方法还包括施加相对于所述电压脉冲具有相反极性的电压脉冲并且具有小于阈值电压或超过阈值电压的幅度和脉冲宽度或超过饱和电压的步骤,以使其被选择以维持或至 更改“ON”或“OFF”状态。 此外,其包括通过施加电压脉冲的方法使应用于液晶元件的DC分量的平均值为零的步骤。 因此,虽然在不同状态下被配置为“ON”或“OFF”的字符的铁电液晶虽然被施加的电压脉冲的极性多于饱和电压 而不管开 - 关模式如何,从而使施加电压的平均值等于零。 也就是说,本发明提供了可以防止液晶元件的劣化并延长寿命的改进的液晶元件。
    • 10. 发明授权
    • Liquid crystal compositions
    • 液晶组成
    • US5609790A
    • 1997-03-11
    • US457741
    • 1995-06-01
    • Takashi TanakaYuzuru SatoHiroshi IwaneShiro Inui
    • Takashi TanakaYuzuru SatoHiroshi IwaneShiro Inui
    • C09K19/02C09K19/46C09K19/34C09K19/12C09K19/52
    • C09K19/0266C09K19/46
    • A liquid crystal composition which shows an antiferroelectric smectic phase in a wide temperature range including room temperatures, and allows high speed operation at a low voltage. A liquid crystal composition comprising at least one kind of compound expressed as ##STR1## shows an antiferroelectric smectic liquid crystalline phase at room temperatures. In the above-mentioned formula, both R.sub.1 and R.sub.2 are alkyl groups, X.sub.1 is a bonding group, X.sub.2 and X.sub.3 are independently selected bonding groups, k, m and n are independently selected from 0 or the integer 1, Z is CF.sub.3 or CH.sub.3, A.sub.1 and A.sub.2 are groups independently selected from a six-membered ring optionally replaced with 0 to 2 nitrogen atoms, or a group in which 2 to 3 such six-membered rings of the same kind or different kinds are linked at the para positions directly or via one or more bonding groups, wherein one or more hydrogen atoms in one or more such rings is optionally replaced with either fluorine atom, methyl group or ethyl group.
    • 一种液晶组合物,其在包括室温的宽温度范围内显示出反铁电近晶相,并允许在低电压下高速运行。 包含至少一种表示为“IMAGE”的化合物的液晶组合物在室温下显示出反铁电的近晶液晶相。 在上述式中,R 1和R 2均为烷基,X 1为键合基团,X 2和X 3独立地选自键合基团,k,m和n独立地选自0或整数1,Z为CF 3或CH 3 ,A1和A2是独立地选自任选被0至2个氮原子替代的六元环的基团,或者其中2至3个相同种类或不同类型的六元环直接在对位连接的基团 或经由一个或多个键合基团,其中一个或多个这样的环中的一个或多个氢原子任选被氟原子,甲基或乙基基团取代。