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    • 4. 发明授权
    • Negatively chargeable electrophotographic photoreceptor
    • 可负电荷的电子照相感光体
    • US5556729A
    • 1996-09-17
    • US464466
    • 1995-06-05
    • Yuzuru FukudaTsuyoshi OhtaMasato OnoTaketoshi HigashiShigeru Yagi
    • Yuzuru FukudaTsuyoshi OhtaMasato OnoTaketoshi HigashiShigeru Yagi
    • G03G5/08G03G5/082G03G5/147
    • G03G5/08235G03G5/08278
    • An electrophotographic photoreceptor comprising: an electrically conductive substrate, a charge injection blocking layer formed on said electrically conductive substrate, a photoconductive layer comprising a single layer formed on said charge injection blocking layer, said photoconductive layer comprising amorphous silicon containing boron, a positive hole capturing layer formed on said photoconductive layer, said positive hole capturing layer being selected from the group comprising amorphous silicon containing less than 50 ppm boron and amorphous silicon being substantially composed of hydrogen and silicon atoms, and a surface layer formed on said positive hole capturing layer. The boron concentration contained in said photoconductive layer is 0.01-1000 ppm. The surface layer is formed by amorphous silicon nitride, amorphous silicon oxide, amorphous silicon carbide or amorphous carbon as a main body. The charge injection blocking layer has amorphous silicon as a main body and contains a group V element. The electrophotographic photoreceptor is excellent in the dark attenuation, the sensitivity and electrification capacity and does not cause image flow or image fogging on copied images obtained by using the photoreceptor.
    • 一种电子照相感光体,其特征在于,具有:导电性基板,形成在所述导电性基板上的电荷注入阻挡层,含有形成于所述电荷注入阻挡层上的单层的光电导层,所述光电导层含有含硼的非晶硅, 所述空穴捕获层选自含有小于50ppm硼的非晶硅和基本上由氢和硅原子组成的非晶硅,以及形成在所述正空穴捕获层上的表面层。 所述光电导层中含有的硼浓度为0.01〜1000ppm。 表面层由非晶氮化硅,非晶氧化硅,非晶碳化硅或无定形碳作为主体形成。 电荷注入阻挡层以非晶硅为主体,含有V族元素。 电子照相感光体在黑暗衰减,灵敏度和带电能力方面优异,并且不会对通过使用感光体获得的复印图像上的图像流动或图像起雾。