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1. 发明授权

US5556729A Negatively chargeable electrophotographic photoreceptor 失效
标题翻译：可负电荷的电子照相感光体
公开(公告)号：US5556729A
公开(公告)日：1996-09-17
申请号：US464466
申请日：1995-06-05
申请人： Yuzuru Fukuda , Tsuyoshi Ohta , Masato Ono , Taketoshi Higashi , Shigeru Yagi
发明人： Yuzuru Fukuda , Tsuyoshi Ohta , Masato Ono , Taketoshi Higashi , Shigeru Yagi
IPC分类号： G03G5/08 , G03G5/082 , G03G5/147
CPC分类号： G03G5/08235 , G03G5/08278
摘要： An electrophotographic photoreceptor comprising: an electrically conductive substrate, a charge injection blocking layer formed on said electrically conductive substrate, a photoconductive layer comprising a single layer formed on said charge injection blocking layer, said photoconductive layer comprising amorphous silicon containing boron, a positive hole capturing layer formed on said photoconductive layer, said positive hole capturing layer being selected from the group comprising amorphous silicon containing less than 50 ppm boron and amorphous silicon being substantially composed of hydrogen and silicon atoms, and a surface layer formed on said positive hole capturing layer. The boron concentration contained in said photoconductive layer is 0.01-1000 ppm. The surface layer is formed by amorphous silicon nitride, amorphous silicon oxide, amorphous silicon carbide or amorphous carbon as a main body. The charge injection blocking layer has amorphous silicon as a main body and contains a group V element. The electrophotographic photoreceptor is excellent in the dark attenuation, the sensitivity and electrification capacity and does not cause image flow or image fogging on copied images obtained by using the photoreceptor.
摘要翻译：一种电子照相感光体，其特征在于，具有：导电性基板，形成在所述导电性基板上的电荷注入阻挡层，含有形成于所述电荷注入阻挡层上的单层的光电导层，所述光电导层含有含硼的非晶硅，所述空穴捕获层选自含有小于50ppm硼的非晶硅和基本上由氢和硅原子组成的非晶硅，以及形成在所述正空穴捕获层上的表面层。所述光电导层中含有的硼浓度为0.01〜1000ppm。表面层由非晶氮化硅，非晶氧化硅，非晶碳化硅或无定形碳作为主体形成。电荷注入阻挡层以非晶硅为主体，含有V族元素。电子照相感光体在黑暗衰减，灵敏度和带电能力方面优异，并且不会对通过使用感光体获得的复印图像上的图像流动或图像起雾。

2. 发明授权

US5631087A Electrostatic image-bearing dielectric member 失效
标题翻译：静电影像承载电介质
公开(公告)号：US5631087A
公开(公告)日：1997-05-20
申请号：US479566
申请日：1995-06-07
申请人： Yuzuru Fukuda , Shigeru Yagi , Tsuyoshi Ohta , Masato Ono
发明人： Yuzuru Fukuda , Shigeru Yagi , Tsuyoshi Ohta , Masato Ono
IPC分类号： G03G5/02 , G03G5/082 , B23B9/00
CPC分类号： G03G5/0217 , G03G5/08285 , Y10T428/30
摘要： An electrostatic image-bearing dielectric member comprises a support and a dielectric layer formed on the support. The dielectric layer is formed of at least one of amorphous carbon, diamond-like carbon and diamond. The dielectric layer may contain not larger than 60 atomic percent of at least one of hydrogen and fluorine. An intermediate layer may be provided between the support and the dielectric layer in order to improve the adhesion therebetween.
摘要翻译：静电图像承载电介质构件包括支撑体和形成在支撑体上的电介质层。电介质层由无定形碳，类金刚石碳和金刚石中的至少一种形成。电介质层可以含有不大于60原子％的氢和氟中的至少一种。可以在支撑体和电介质层之间设置中间层，以改善它们之间的粘合性。

3. 发明授权

US5352555A Electrophotographic photoreceptor and electrophotographic process therefor 失效
标题翻译：电子照相感光体及其电子照相方法
公开(公告)号：US5352555A
公开(公告)日：1994-10-04
申请号：US74495
申请日：1993-06-11
申请人： Shigeru Yagi , Tsuyoshi Ohta , Taketoshi Higashi , Masao Watanabe , Kazuo Yano , Masato Ono , Yuzuru Fukuda
发明人： Shigeru Yagi , Tsuyoshi Ohta , Taketoshi Higashi , Masao Watanabe , Kazuo Yano , Masato Ono , Yuzuru Fukuda
IPC分类号： G03G5/08 , G03G5/082 , G03G5/10 , G03G5/147 , G03G13/09 , G03G15/16 , G03G21/10 , G03G5/14
CPC分类号： G03G5/0825 , G03G5/08221 , G03G5/08235 , G03G5/10 , G03G5/102
摘要： An electorphotographic photoreceptor comprises an electroconductive support at least whose indentation hardness of surface is 100 and over on the Vickers hardness scale; a photoconductive layer comprising amorphous silicon containing at least one of hydrogen and halogen; and a surface layer comprising at least one of an amorphous silicon layer containing at least one of nitrogen, oxygen, and carbon, and an amorphous carbon layer containing at least one of not exceeding 50 atm. % of hydrogen and halogen. This photoreceptor is long-lived and causing no image defects that would otherwise develop in connection with the support, and it can be applied to an energy-saving, low-cost and highly reliable electrophotographic process and apparatus.
摘要翻译：电摄影感光体包括导电载体，至少其表面的压痕硬度在维氏硬度标度上为100以上; 包含含有氢和卤素中的至少一个的非晶硅的光电导层; 以及包含至少一种含有氮，氧和碳中的至少一种的非晶硅层的表面层和含有不超过50atm的至少一种的无定形碳层。％的氢和卤素。该感光体是长寿命的，并且不会导致与载体相关的图像缺陷，并且可以应用于节能，低成本和高可靠性的电子照相方法和装置。

4. 发明授权

US5592274A Electrophotographic apparatus and process for simultaneously transferring and fixing toner image onto transfer paper 失效
标题翻译：用于同时将调色剂图像转印和定影到转印纸上的电子照相设备和方法
公开(公告)号：US5592274A
公开(公告)日：1997-01-07
申请号：US12159
申请日：1993-01-29
申请人： Taketoshi Higashi , Shigeru Yagi , Yuzuru Fukuda , Masato Ono , Masao Watanabe , Tsuyoshi Ohta
发明人： Taketoshi Higashi , Shigeru Yagi , Yuzuru Fukuda , Masato Ono , Masao Watanabe , Tsuyoshi Ohta
IPC分类号： G03G5/082 , G03G5/147 , G03G15/16 , G03G21/20 , G03G15/14 , G03G15/20
CPC分类号： G03G15/167 , G03G21/20 , G03G5/08235 , G03G5/0825 , G03G5/08264 , G03G5/14704 , G03G2215/1614 , G03G2215/1652 , G03G2215/1685
摘要： In an electrophotographic system, an electrostatic latent image as formed on a photoreceptor is developed with a developing agent to form a toner image thereon, a transfer paper is laid over the toner image and pressure is applied to the photoreceptor and the transfer paper so as to transfer or simultaneously transfer and fix the toner image onto the transfer paper. The photoreceptor is one having a surface protecting layer and a light-sensitive layer made of a hydrogenated and/or fluorinated amorphous silicon. The light-sensitive layer and the surface protecting layer of the photoreceptor are uniformly heated to a constant temperature. A charging device or a discharging brush or blade is used as a device of discharging the charges of the photoreceptor after the transference.
摘要翻译：在电照相系统中，用感光体形成的静电潜像用显影剂显影以在其上形成调色剂图像，将转印纸放置在调色剂图像上，并将压力施加到感光体和转印纸上，以便转印或同时转印并将调色剂图像固定在转印纸上。感光体是具有表面保护层和由氢化和/或氟化非晶硅制成的感光层的感光体。将感光层和感光体的表面保护层均匀地加热至恒定温度。使用充电装置或放电刷或叶片作为在转移后放电感光体的装置。

5. 发明授权

US5462827A Electrophotographic photoreceptor and electrophotographic process 失效
标题翻译：电子照相感光体和电子照相工艺
公开(公告)号：US5462827A
公开(公告)日：1995-10-31
申请号：US184193
申请日：1994-01-18
申请人： Shigeru Yagi , Masato Ono , Taketoshi Higashi , Tsuyoshi Ohta , Yuzuru Fukuda
发明人： Shigeru Yagi , Masato Ono , Taketoshi Higashi , Tsuyoshi Ohta , Yuzuru Fukuda
IPC分类号： G03G5/082 , G03G5/14 , G03G5/147
CPC分类号： G03G5/14704 , G03G5/08221 , G03G5/08235 , G03G5/144
摘要： A negative-charging electrophotographic photoreceptor comprising an electrically conductive support having consecutively thereon (a) a charge injection prevention layer having a thickness of from 0.15 to 10 .mu.m, (b) a photoconductive layer, and (c) a surface layer, the charge injection prevention layer (a) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom, and containing a nitrogen atom in an atomic ratio of from 0.01 to 0.65 to the silicon atom, the photoconductive layer (b) comprising amorphous silicon containing at least one of a hydrogen atom and a halogen atom.
摘要翻译：一种负电荷照相感光体，包括其上连续地具有导电载体（a）厚度为0.15至10μm的电荷注入阻止层，（b）光电导层，和（c）表面层，电荷包含含有氢原子和卤素原子中的至少一个的非晶硅并且含有与硅原子的原子比为0.01至0.65的氮原子的注入防止层（a），所述光电导层（b）包含非晶硅含有氢原子和卤素原子中的至少一个。

6. 发明授权

US5514507A Electrophotographic photoreceptor with amorphous Si-Ge layer 失效
标题翻译：具有非晶Si-Ge层的电子照相感光体
公开(公告)号：US5514507A
公开(公告)日：1996-05-07
申请号：US249964
申请日：1994-05-27
申请人： Shigeru Yagi , Tsuyoshi Ohta
发明人： Shigeru Yagi , Tsuyoshi Ohta
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14 , G03G5/147
CPC分类号： G03G5/08264 , G03G5/08221 , G03G5/08235 , G03G5/0825
摘要： An electrophotographic photoreceptor for positive electrification comprising at least an electroconductive layer, a charge injection blocking layer, a photoconductive layer and a surface layer. The photoconductive layer comprises a layer having an amorphous silicon layer containing one or more of hydrogen, halogen and a Group III element for controlling electroconductivity and layer having an amorphous silicon germanium layer containing at least hydrogen, halogen and a Group III element. The charge injection blocking layer comprises an amorphous silicon layer containing hydrogen and a Group III element in an amount of equal or less than 1000 ppm. The electrophotographic photoreceptor has excellent electrification characteristics with dark and light sensitivities, stability against repetitive use and may be utilized as a photoreceptor for a semiconductor laser beam printer.
摘要翻译：一种用于正电荷的电子照相感光体，其至少包括导电层，电荷注入阻挡层，光电导层和表面层。光电导层包括具有含有一个或多个氢，卤素和用于控制导电性的III族元素的非晶硅层的层，以及具有至少含有氢，卤素和III族元素的非晶硅锗层的层。电荷注入阻挡层包含含有等于或小于1000ppm的氢和III族元素的非晶硅层。电子照相感光体具有优异的起电特性，具有暗和光敏感性，耐重复使用的稳定性，可用作半导体激光束打印机的感光体。

7. 发明授权

US09153608B2 Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage 有权
标题翻译：光电二极管阵列，确定参考电压的方法以及确定推荐工作电压的方法
公开(公告)号：US09153608B2
公开(公告)日：2015-10-06
申请号：US13247192
申请日：2011-09-28
申请人： Kenichi Sato , Shogo Kamakura , Shigeyuki Nakamura , Tsuyoshi Ohta , Michito Hirayanagi , Hiroki Suzuki , Shunsuke Adachi
发明人： Kenichi Sato , Shogo Kamakura , Shigeyuki Nakamura , Tsuyoshi Ohta , Michito Hirayanagi , Hiroki Suzuki , Shunsuke Adachi
IPC分类号： H01J40/14 , H01F3/08 , H03K17/78 , H01L27/00 , H01J31/50 , H01L27/144
CPC分类号： H01L27/1446
摘要： A reverse bias voltage is applied to a photodiode array provided with a plurality of avalanche photodiodes operated in Geiger mode and with quenching resistors connected in series to the respective avalanche photodiodes. Electric current is measured with change of the reverse bias voltage applied, and the reverse bias voltage at an inflection point in change of electric current measured is determined as a reference voltage. A voltage obtained by adding a predetermined value to the determined reference voltage is determined as a recommended operating voltage.
摘要翻译：反向偏置电压被施加到设置有以盖革模式操作的多个雪崩光电二极管的光电二极管阵列，以及与相应的雪崩光电二极管串联连接的淬火电阻器。以施加的反向偏置电压的变化来测量电流，并且将测量的电流变化中的拐点处的反向偏置电压确定为参考电压。将通过将预定值加到所确定的参考电压而获得的电压被确定为推荐的工作电压。

8. 发明申请

US20070145416A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070145416A1
公开(公告)日：2007-06-28
申请号：US11616603
申请日：2006-12-27
申请人： Tsuyoshi Ohta , Bungo Tanaka
发明人： Tsuyoshi Ohta , Bungo Tanaka
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0649 , H01L29/0696 , H01L29/4236 , H01L29/42372 , H01L29/4925 , H01L29/4958 , H01L29/7397
摘要： A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of the second conduction type is formed on the second semiconductor layer, and a semiconductor diffusion layer of the first conduction type is formed on a surface of the semiconductor base layer. A trench is formed from the surface of the semiconductor diffusion layer to a depth reaching the second semiconductor layer. A gate electrode is formed of a conductor film buried in the trench with a gate insulator interposed therebetween. The conductor film includes a first conductor film formed along the gate electrode to have a recess and a second conductor film formed to fill the recess.
摘要翻译：半导体器件包括在第一导电类型的第一半导体层的表面上的第一导电类型的第二半导体层。第二导电类型的半导体基层形成在第二半导体层上，并且在半导体基底层的表面上形成第一导电类型的半导体扩散层。从半导体扩散层的表面到到达第二半导体层的深度形成沟槽。栅电极由埋在沟槽中的导体膜形成，栅极绝缘体插入其间。导体膜包括沿着栅电极形成以具有凹部的第一导体膜和形成为填充凹部的第二导体膜。

9. 发明授权

US08502305B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08502305B2
公开(公告)日：2013-08-06
申请号：US13421816
申请日：2012-03-15
申请人： Tsuyoshi Ohta , Tatsuya Nishiwaki , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
发明人： Tsuyoshi Ohta , Tatsuya Nishiwaki , Norio Yasuhara , Masatoshi Arai , Takahiro Kawano
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/2255 , H01L21/26586 , H01L29/0696 , H01L29/0856 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/42376 , H01L29/66734 , H01L29/861
摘要： According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
摘要翻译：根据实施例，半导体器件包括第一导电类型的半导体层，设置在半导体层上的第二导电类型的基极区域和设置在基极区域上的第二导电类型的第一接触区域。该器件包括设置在穿过第一接触区域和基极区域的沟槽中的栅电极，以及设置在栅极上并包含第一导电型杂质元素的层间绝缘膜。该器件还包括设置在层间绝缘膜和第一接触区域之间的第一导电类型的源极区域，源极区域与层间绝缘膜的侧面接触并且在基极区域中延伸。

10. 外观设计

USD589698S1 Key case 有权
公开(公告)号：USD589698S1
公开(公告)日：2009-04-07
申请号：US29323741
申请日：2008-08-29
申请人： Tsuyoshi Ohta , Rumi Ohta
设计人： Tsuyoshi Ohta , Rumi Ohta

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