专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08254168B2 Nonvolatile semiconductor memory device and write method for the same 有权
标题翻译：非易失性半导体存储器件和写入方法相同
公开(公告)号：US08254168B2
公开(公告)日：2012-08-28
申请号：US12820342
申请日：2010-06-22
申请人： Yuya Suzuki , Rieko Tanaka
发明人： Yuya Suzuki , Rieko Tanaka
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3459 , G11C2211/5621
摘要： According to one embodiment, a semiconductor device includes memory cells, bit lines, a write circuit, and sense amplifiers. The bit lines are connected to the memory cells. The sense amplifiers are configured to bias the bit line to which the selected memory cell is connected, to a first voltage until the threshold of the selected memory cell reaches the value of a first write state. Then, when the threshold of the selected memory cell reaches the value of the first write state, the bit line is biased to a second voltage higher than the first voltage. When the threshold of the selected memory cell reaches the value of a second write state, the bit line is continuously biased to a third voltage higher than the second voltage. Bit lines connected to unselected memory cells corresponding to the memory cells other than the selected one are biased to the third voltage.
摘要翻译：根据一个实施例，半导体器件包括存储器单元，位线，写入电路和读出放大器。位线连接到存储单元。感测放大器被配置为将所选择的存储器单元所连接的位线偏置到第一电压，直到所选存储器单元的阈值达到第一写入状态的值。然后，当所选择的存储单元的阈值达到第一写入状态的值时，位线被偏置到高于第一电压的第二电压。当所选存储单元的阈值达到第二写入状态的值时，位线被连续地偏置到高于第二电压的第三电压。连接到与所选存储单元不同的存储单元的未选择存储单元的位线被偏置到第三电压。

2. 发明申请

US20120243331A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20120243331A1
公开(公告)日：2012-09-27
申请号：US13428497
申请日：2012-03-23
申请人： Tomofumi Fujimura , Yuya Suzuki
发明人： Tomofumi Fujimura , Yuya Suzuki
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3404
摘要： According to one embodiment, a semiconductor memory device includes a cell array, a voltage generator, and a controller. The memory cells are formed along rows and columns. The voltage generator generates a write voltage and a verify voltage. The voltage generator transfers a first voltage to the memory cell having a threshold voltage lower than the verify voltage. The voltage generator transfers a second voltage lower than the first voltage. The controller causes the voltage generator to transfer the verify voltage to the memory cell and to terminate a write operation. The controller performs the writing at least twice.
摘要翻译：根据一个实施例，半导体存储器件包括单元阵列，电压发生器和控制器。存储单元沿行和列形成。电压发生器产生写入电压和验证电压。电压发生器将第一电压传送到具有低于验证电压的阈值电压的存储单元。电压发生器传送低于第一电压的第二电压。控制器使得电压发生器将验证电压传送到存储器单元并终止写入操作。控制器执行写入至少两次。

3. 发明授权

US08243524B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US08243524B2
公开(公告)日：2012-08-14
申请号：US12723864
申请日：2010-03-15
申请人： Yuya Suzuki , Toshiki Hisada , Yoshikazu Hosomura
发明人： Yuya Suzuki , Toshiki Hisada , Yoshikazu Hosomura
IPC分类号： G11C16/06
CPC分类号： G11C8/10 , G11C16/26 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11526
摘要： A semiconductor storage device has a sense amplifier. The sense amplifier includes a first lower interconnection; a second interlayer insulation film formed on the first interlayer insulation film and top of the first interconnection; a contact interconnection formed in a direction perpendicular to a substrate plane of the semiconductor substrate so as to pass through the second interlayer insulation film, and connected to the first lower interconnection; a first upper interconnection formed on the second interlayer insulation film and connected to the contact interconnection disposed under the first upper interconnection; a dummy contact interconnection formed in a direction perpendicular to the substrate plane of the semiconductor substrate in the second interlayer insulation film, and adjacent to the contact interconnection; and a second upper interconnection formed on the second interlayer insulation film so as to extend in the first direction, and connected to the dummy contact interconnection disposed under the second upper interconnection.
摘要翻译：半导体存储装置具有读出放大器。读出放大器包括第一下部互连; 形成在第一层间绝缘膜上的第二层间绝缘膜和第一互连的顶部; 形成在与半导体衬底的衬底平面垂直的方向上以便穿过第二层间绝缘膜并且连接到第一下互连的接触互连; 形成在所述第二层间绝缘膜上并连接到设置在所述第一上部互连件下方的所述接触互连的第一上互连; 在第二层间绝缘膜中与垂直于半导体衬底的衬底平面的方向形成的虚拟接触互连，并且与接触互连相邻; 以及形成在所述第二层间绝缘膜上以沿所述第一方向延伸的第二上部互连件，并且连接到设置在所述第二上部互连件下方的所述虚拟接触互连件。

4. 发明授权

US07805328B2 Method and system of managing production quantity 失效
标题翻译：管理生产数量的方法和制度
公开(公告)号：US07805328B2
公开(公告)日：2010-09-28
申请号：US10773239
申请日：2004-02-09
申请人： Yuya Suzuki , Takashi Watanuki , Masayuki Kawakami , Hiroshi Saito , Takumi Otani
发明人： Yuya Suzuki , Takashi Watanuki , Masayuki Kawakami , Hiroshi Saito , Takumi Otani
IPC分类号： G06Q10/00
CPC分类号： G06Q10/08 , G06Q10/06315 , G06Q10/087 , G06Q30/0202
摘要： There is provided a method of managing production quantity that includes determining a standard inventory quantity of products to be stocked in the single delivery center for a time of at least one predetermined cycle ahead based on a shipment record of the single delivery center, and determining a total assembly quantity of products to be assembled by the at least one factory for a time of at least one predetermined cycle ahead based on the determined standard inventory quantity of the single delivery center and an actual inventory quantity of the at least one factory.
摘要翻译：提供了一种管理生产数量的方法，其包括基于单个交付中心的装运记录，确定在单个交付中心内存储的产品的标准库存量至少一个预定周期的时间，以及确定一个基于所确定的单个交付中心的标准库存量和至少一个工厂的实际库存数量，至少一个工厂要组装的产品的总装配量至少预定的一个周期的时间。

5. 发明授权

US08498139B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US08498139B2
公开(公告)日：2013-07-30
申请号：US13224504
申请日：2011-09-02
申请人： Yuya Suzuki , Toshiaki Edahiro
发明人： Yuya Suzuki , Toshiaki Edahiro
IPC分类号： G11C5/02 , G11C5/06 , G11C16/06 , G11C7/10
CPC分类号： G11C7/062 , G11C16/0483 , G11C16/26
摘要： A memory includes plurality of word lines extending in a first direction, plurality of bit lines extending in a second direction to intersect with the word lines, and a memory cell array including plurality of memory cells connected to the word lines and the bit lines. Plurality of sense amplifiers include detectors configured to detect data transmitted from the memory cells to sense nodes via the corresponding bit lines, and capacitors connected between the sense nodes and a reference potential, respectively, and are provided to be arranged in the second direction from at least a side of one ends of the bit lines. Each of k capacitors corresponding to k detectors, where k is equal to or greater than 2, has a width corresponding to widths of the k detectors, the k capacitors are arranged in the second direction, and the k detectors are arranged in the first direction.
摘要翻译：存储器包括在第一方向上延伸的多个字线，在第二方向上延伸以与字线相交的多个位线，以及包括连接到字线和位线的多个存储单元的存储单元阵列。多个感测放大器包括检测器，其被配置为检测从存储器单元发送的数据，以经由相应位线检测节点，以及分别连接在感测节点和参考电位之间的电容器，并且被设置成沿着第二方向从至少一端的位线的一端。对应于k个检测器的k个电容器中的每一个k，其中k等于或大于2，具有对应于k个检测器的宽度的宽度，k个电容器被布置在第二方向上，并且k个检测器被布置在第一方向。

6. 发明授权

US07612337B2 Focused ion beam system and a method of sample preparation and observation 有权
标题翻译：聚焦离子束系统及样品制备与观察方法
公开(公告)号：US07612337B2
公开(公告)日：2009-11-03
申请号：US11654685
申请日：2007-01-18
申请人： Yuya Suzuki , Takeo Kamino , Toshie Yaguchi , Mitsuru Konno , Tsuyoshi Ohnishi
发明人： Yuya Suzuki , Takeo Kamino , Toshie Yaguchi , Mitsuru Konno , Tsuyoshi Ohnishi
IPC分类号： H01J37/26 , G01N23/22
CPC分类号： H01J37/3056 , H01J37/3005 , H01J2237/2516 , H01J2237/31745
摘要： A focused ion beam system capable of acquiring surface structure information, internal structure information, and internal composition information about a sample simultaneously from the same field of view of the sample. A method of sample preparation and observation employs such focused ion beam system to accurately set a sample processing position based on information about the structure and composition of the sample acquired from multiple directions of the sample, and to process and observe the sample. The system includes, in order to acquire the sample structure and composition information simultaneously, a secondary electron detector, a transmission electron detector, and an energy dispersive X-ray spectroscope or an electron energy loss spectroscope, and employs a stub having the sample rotating and tilting function. The method includes a marking process.
摘要翻译：一种聚焦离子束系统，能够从样品的同一视野同时获取关于样品的表面结构信息，内部结构信息和内部组成信息。样品制备和观察的方法使用这种聚焦离子束系统基于从样品的多个方向获得的样品的结构和组成的信息来精确地设置样品处理位置，并且处理和观察样品。为了同时获取样品结构和组成信息，该系统包括二次电子检测器，透射电子检测器和能量色散X射线分光镜或电子能量损失光谱仪，并且使用具有样品旋转的短截线和倾斜功能。该方法包括标记过程。

7. 发明授权

US08814269B2 Vehicle seat 有权
标题翻译：车座
公开(公告)号：US08814269B2
公开(公告)日：2014-08-26
申请号：US13216498
申请日：2011-08-24
申请人： Yuya Suzuki , Tomoyuki Takase , Shinya Ando , Michinori Kakumu , Keiichiro Inoue
发明人： Yuya Suzuki , Tomoyuki Takase , Shinya Ando , Michinori Kakumu , Keiichiro Inoue
IPC分类号： A47C3/00 , A47C7/46
CPC分类号： B60N2/4228 , B60N2/4256 , B60N2/68
摘要： A vehicle seat is provided. The vehicle seat includes a back frame, and a bracket assembled to the back frame and configured to reduce a load applied to a neck of an occupant by shock of a rear collision when the rear collision occurs in a vehicle, wherein the bracket has an inclined surface that is substantially parallel with a torso line at a normal posture of a seatback.
摘要翻译：提供车座。所述车辆座椅包括后框架和组装到所述后框架上的支架，并且构造成当在所述车辆中发生后部碰撞时通过后碰撞的冲击来减轻施加到乘员颈部的负荷，其中，所述支架具有倾斜在座椅靠背的正常姿势下基本上与躯干线平行的表面。

8. 发明申请

US20120243317A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120243317A1
公开(公告)日：2012-09-27
申请号：US13422051
申请日：2012-03-16
申请人： Satoshi INOUE , Yuya Suzuki
发明人： Satoshi INOUE , Yuya Suzuki
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3454
摘要： According to one embodiment, a non-volatile semiconductor memory device includes a writing unit that performs a writing operation on memory cells while stepping up a writing voltage based on a check result of a verifying operation on the memory cells, a threshold-value determining unit that determines threshold values of the memory cells based on a write verifying operation on the memory cells, and a step-up voltage changing unit that changes a step-up voltage for stepping up the writing voltage, based on the threshold values of the memory cells.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括写入单元，其基于对存储器单元的验证操作的检查结果来提高写入电压，对存储器单元执行写入操作;阈值确定单元基于对存储器单元的写入验证操作来确定存储器单元的阈值;以及升压电压改变单元，其基于存储单元的阈值改变升压电压以提高写入电压。

9. 发明申请

US20100329013A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING NONVOLATILE MEMORY CELL AND DATA WRITING METHOD THEREOF 审中-公开
标题翻译：包含非易失性存储器单元的半导体存储器件及其数据写入方法
公开(公告)号：US20100329013A1
公开(公告)日：2010-12-30
申请号：US12759941
申请日：2010-04-14
申请人： Go SHIKATA , Yuya Suzuki
发明人： Go SHIKATA , Yuya Suzuki
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/3454 , G11C16/3459
摘要： A semiconductor memory device includes memory cells, bit lines, and first and second control circuits. The first control circuit supplies a write voltage and a write control voltage to a selected memory cell to write the data in the selected memory cell, the first control circuit changes a supply state of the write control voltage to further write the data when the selected memory cell reaches a first write state by the write, the first control circuit further changes the supply state of the write control voltage to prohibit the write when the selected memory cell reaches a second write state by the write. The second control circuit controls a rising of the write control voltage when the first control circuit starts the writing to make the selected memory cell the second write state.
摘要翻译：半导体存储器件包括存储器单元，位线以及第一和第二控制电路。第一控制电路向选择的存储单元提供写入电压和写入控制电压以将数据写入所选择的存储单元中，第一控制电路改变写入控制电压的供应状态，以在所选择的存储器单元通过写入达到第一写入状态，则第一控制电路进一步改变写入控制电压的供应状态，以便当所选择的存储器单元通过写入达到第二写入状态时禁止写入。当第一控制电路开始写入时，第二控制电路控制写入控制电压的上升，以使所选择的存储单元成为第二写入状态。

10. 发明申请

US20070187597A1 Focused ion beam system and a method of sample preparation and observation 有权
标题翻译：聚焦离子束系统及样品制备与观察方法
公开(公告)号：US20070187597A1
公开(公告)日：2007-08-16
申请号：US11654685
申请日：2007-01-18
申请人： Yuya Suzuki , Takeo Kamino , Toshie Yaguchi , Mitsuru Konno , Tsuyoshi Ohnishi
发明人： Yuya Suzuki , Takeo Kamino , Toshie Yaguchi , Mitsuru Konno , Tsuyoshi Ohnishi
IPC分类号： G21K7/00
CPC分类号： H01J37/3056 , H01J37/3005 , H01J2237/2516 , H01J2237/31745
摘要： A focused ion beam system capable of acquiring surface structure information, internal structure information, and internal composition information about a sample simultaneously from the same field of view of the sample. A method of sample preparation and observation employs such focused ion beam system to accurately set a sample processing position based on information about the structure and composition of the sample acquired from multiple directions of the sample, and to process and observe the sample. The system includes, in order to acquire the sample structure and composition information simultaneously, a secondary electron detector, a transmission electron detector, and an energy dispersive X-ray spectroscope or an electron energy loss spectroscope, and employs a stub having the sample rotating and tilting function. The method includes a marking process.
摘要翻译：一种聚焦离子束系统，能够从样品的同一视野同时获取关于样品的表面结构信息，内部结构信息和内部组成信息。样品制备和观察的方法使用这种聚焦离子束系统基于从样品的多个方向获得的样品的结构和组成的信息来精确地设置样品处理位置，并且处理和观察样品。为了同时获取样品结构和组成信息，该系统包括二次电子检测器，透射电子检测器和能量色散X射线分光镜或电子能量损失光谱仪，并且使用具有样品旋转的短截线和倾斜功能。该方法包括标记过程。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式