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1. 发明申请

US20110241068A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20110241068A1
公开(公告)日：2011-10-06
申请号：US13074333
申请日：2011-03-29
申请人： Yuuji WATANABE , Masanori FUKUI , Michiaki MARUOKA
发明人： Yuuji WATANABE , Masanori FUKUI , Michiaki MARUOKA
IPC分类号： H01L29/739 , H01L21/332
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/47 , H01L29/66712 , H01L29/7395
摘要： A semiconductor device which can make the generation of gate parasitic oscillations more difficult than a semiconductor device of the related art is provided. The semiconductor device includes: a drift layer which is constituted of a reference concentration layer and a low concentration layer; a gate electrode structure; a pair of source regions, a pair of base regions, and depletion-layer extension regions which are formed in the reference concentration layer below the base regions, wherein the depletion-layer extension regions are formed such that a lower surface of the depletion-layer extension region is deeper than a boundary between the low concentration layer and the reference concentration layer and projects into the low concentration layers, and a dVDS/dt-decreasing diffusion layer which contains an n-type impurity at a concentration higher than the concentration of the impurity which the reference concentration layer contains and decreases dVDS/dt when the semiconductor device is turned off is formed on a surface of the reference concentration layer.
摘要翻译：提供了可以使栅极寄生振荡的产生比现有技术的半导体器件困难的半导体器件。半导体器件包括：漂移层，其由参考浓度层和低浓度层构成; 栅电极结构; 一对源极区域，一对基极区域和耗尽层延伸区域，其形成在基极区域下方的参考浓度层中，其中形成耗尽层延伸区域，使得耗尽层的下表面延伸区域比低浓度层和参考浓度层之间的边界深，并且投入到低浓度层中，并且含有浓度高于低浓度层的浓度的n型杂质的dVDS / dt减小扩散层在参考浓度层的表面上形成半导体器件截止时参考浓度层包含并降低dVDS / dt的杂质。

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