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1. 发明授权

US6001191A Substrate washing method, substrate washing-drying method, substrate washing apparatus and substrate washing-drying apparatus 失效
标题翻译：基板清洗方法，基板洗涤干燥方法，基板清洗装置和基板清洗干燥装置
公开(公告)号：US6001191A
公开(公告)日：1999-12-14
申请号：US760801
申请日：1996-12-05
申请人： Yuuji Kamikawa , Kinya Ueno , Naoki Shindo , Yoshio Kumagai
发明人： Yuuji Kamikawa , Kinya Ueno , Naoki Shindo , Yoshio Kumagai
IPC分类号： B08B3/04 , B08B3/08 , B08B3/10 , H01L21/00 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B3/08 , B08B3/102 , H01L21/67028 , Y10S134/902
摘要： Disclosed is a method of washing substrates, comprising the steps of (a) introducing a washing solution into a processing vessel having a wafer boat movably mounted therein to fill the vessel with the washing solution, (b) allowing a plurality of wafers to be held collectively by chuck such that the wafers held by the chuck are arranged at substantially an equal pitch, (c) dipping the wafers together with the chuck in the washing solution within the processing vessel, (d) transferring the wafers from the chuck onto the wafer boat in an upper region of the processing vessel, (e) moving the wafers together with the wafer boat within the washing solution to allow the substrates to be positioned in a lower region of the processing vessel, (f) discharging the washing solution from the upper region of the processing vessel, (g) supplying a fresh washing solution into the lower region of the processing vessel so as to cause the washing solution within the processing vessel to overflow the processing vessel, (h) taking the washed wafers out of the processing vessel.
摘要翻译：公开了一种洗涤基板的方法，包括以下步骤：（a）将洗涤溶液引入到具有可移动地安装在其中的晶片舟皿的处理容器中，以便用清洗溶液填充容器，（b）允许多个晶片被保持（c）将晶片与卡盘一起浸入处理容器内的洗涤溶液中，（d）将晶片从卡盘转移到晶片上在处理容器的上部区域中运行，（e）将晶片与晶片舟皿一起移动到洗涤溶液中，以使基底定位在处理容器的下部区域，（f）将洗涤溶液从处理容器的上部区域，（g）将新鲜的洗涤溶液供应到处理容器的下部区域，以使处理容器内的洗涤液溢出（h）将洗涤过的晶片从处理容器中取出。

2. 发明授权

US5236515A Cleaning device 失效
标题翻译：清洁装置
公开(公告)号：US5236515A
公开(公告)日：1993-08-17
申请号：US792919
申请日：1991-11-15
申请人： Kinya Ueno , Yoshio Kumagai
发明人： Kinya Ueno , Yoshio Kumagai
IPC分类号： H01L21/304 , B08B3/04 , H01L21/00
CPC分类号： H01L21/67017 , B08B3/04 , Y10S134/902
摘要： A cleaning device comprises a cleaning tub, holding means for holding a plurality of objects substantially vertically at regular intervals, cleaning solution supplying means for supplying a cleaning solution to the cleaning tub through the bottom thereof, and distributing means for uniformly distributing the cleaning solution to the objects.
摘要翻译：一种清洁装置，包括清洗槽，用于以规则的间隔大致垂直地保持多个物体的保持装置，用于通过其底部向清洗桶供应清洁溶液的清洁溶液供给装置，以及用于将清洁溶液均匀分配到对象。

3. 发明授权

US07191785B2 Substrate processing apparatus for resist film removal 有权
公开(公告)号：US07191785B2
公开(公告)日：2007-03-20
申请号：US10606135
申请日：2003-06-25
申请人： Takayuki Toshima , Kinya Ueno , Miyako Yamasaka , Hideyuki Tsutsumi , Tadashi Iino , Yuji Kamikawa
发明人： Takayuki Toshima , Kinya Ueno , Miyako Yamasaka , Hideyuki Tsutsumi , Tadashi Iino , Yuji Kamikawa
IPC分类号： B08B3/10
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

4. 发明授权

US06491045B2 Apparatus for and method of cleaning object to be processed 有权
公开(公告)号：US06491045B2
公开(公告)日：2002-12-10
申请号：US09970696
申请日：2001-10-05
申请人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
发明人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
IPC分类号： B08B310
CPC分类号： H01L21/67028 , B08B3/08 , Y10S134/902
摘要： A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber. The method may also include exhausting an atmosphere in the drying chamber while supplying inert gas, decompressing the atmosphere in the drying chamber as well as chemical cleaning, water cleaning, and ozone cleaning of the object.

5. 发明授权

US06413355B1 Apparatus for and method of cleaning objects to be processed 失效
标题翻译：用于清洁待处理物体的设备和方法
公开(公告)号：US06413355B1
公开(公告)日：2002-07-02
申请号：US08936121
申请日：1997-09-24
申请人： Yuji Kamikawa , Satoshi Nakashima , Kinya Ueno
发明人： Yuji Kamikawa , Satoshi Nakashima , Kinya Ueno
IPC分类号： C23F102
CPC分类号： H01L21/67028
摘要： A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through a slide door 72. In the cleaning method, a drying process and a cleaning process are carried out separately on condition that the space in the drying chamber 42 is insulated from the space of the cleaning bath 41 through the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.
摘要翻译：提供一种用于清洁物体的清洁设备和清洁方法。在清洁装置中，干燥室42和清洗槽41分别上下分离。因此，干燥室42中的空间可以通过滑动门72与清洁浴41的空间绝缘。在清洁方法中，干燥过程和清洁过程分别进行，条件是干燥空间室42通过滑动门72与清洗槽41的空间绝缘。因此，在干燥过程中不可能从化学处理受到不良影响。

6. 发明授权

US06299696B2 Substrate processing apparatus and substrate processing method 失效
公开(公告)号：US06299696B2
公开(公告)日：2001-10-09
申请号：US09735150
申请日：2000-12-12
申请人： Yuji Kamikawa , Shigenori Kitahara , Kinya Ueno
发明人： Yuji Kamikawa , Shigenori Kitahara , Kinya Ueno
IPC分类号： B08B500
CPC分类号： H01L21/67028 , Y10S134/902
摘要： A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2). A pure water supply system (11) including pure water supply port and a draining unit (12) including a drain pipe-line (141) through which pure water is drained are combined with the second processing chamber (4).

7. 发明授权

US6131588A Apparatus for and method of cleaning object to be processed 失效
标题翻译：用于清洁被处理物体的设备和方法
公开(公告)号：US6131588A
公开(公告)日：2000-10-17
申请号：US10851
申请日：1998-01-22
申请人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
发明人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
IPC分类号： H01L21/304 , B08B3/04 , B08B3/08 , H01L21/00 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/08 , Y10S134/902
摘要： The purpose of the present invention is to provide a cleaning apparatus and a cleaning method which can prevent the object to be processed being subjected to a bad influence caused by a chemical treatment, have a high degree of freedom in designing the apparatus, make the cleaning process rapid and be designed in smaller size. In this cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 by a nitrogen-gas curtain 59c and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while screening it by the nitrogen-gas curtain 59c. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72.
摘要翻译：本发明的目的是提供一种能够防止被处理物被化学处理造成的不良影响的清洁装置和清洁方法，在设计装置时具有高的自由度，使清洁过程快速，设计更小。在该清洁装置中，干燥室42和清洗槽41分别上下分离。因此，干燥室42中的空间可以通过氮气幕59c和滑动门72与清洁浴41的空间绝缘。在清洁方法中，清洁浴41中的清洁处理被执行，同时通过氮气幕59c进行筛选。另一方面，干燥室42中的干燥过程在通过滑动门72密封和封闭的同时完成。

8. 发明授权

US5421905A Method for washing wafers 失效
标题翻译：洗涤晶圆的方法
公开(公告)号：US5421905A
公开(公告)日：1995-06-06
申请号：US120813
申请日：1993-10-13
申请人： Kinya Ueno , Hiroki Taniyama
发明人： Kinya Ueno , Hiroki Taniyama
IPC分类号： H01L21/304 , H01L21/00 , B08B1/02 , B08B3/02
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A method for washing a group of semiconductor wafers in which a first support arrangement is provided for supporting the wafer group to be immersed in a solution, with a second support carrying the wafer group to the treatment vessel. The second support can be provided, for example, in the form of a fork arrangement, and the wafer group is transferred from the second support to the first support for treatment or washing in the treatment vessel. After the wafer group is pulled from the treatment solution, the wafer group is transferred from the first support to the second support and carried outside of the treatment vessel and transferred from the second support. Water is then sprayed onto the second support by moving a water washing nozzle along support rod(s) of the second support, and by blowing a drying gas along the second support while the second support is not carrying wafers thereon, and the next wafer group can then be supported by the clean second support.
摘要翻译：一种用于洗涤一组半导体晶片的方法，其中提供第一支撑装置以支撑要浸没在溶液中的晶片组，第二支撑件将晶片组携带到处理容器。第二支撑件可以例如以叉形装置的形式提供，并且将晶片组从第二支撑件转移到第一支撑件，以在处理容器中进行处理或洗涤。在将晶片组从处理溶液中拉出之后，将晶片组从第一支撑件转移到第二支撑件，并承载在处理容器的外部并从第二支撑件转移。然后通过沿着第二支撑件的支撑杆移动水洗喷嘴并且沿着第二支撑件吹送干燥气体，同时第二支撑件不在其上承载晶片，并且下一个晶片组然后可以通过干净的第二支持来支持。

9. 发明授权

US06554010B1 Substrate cleaning tool, having permeable cleaning head 失效
标题翻译：基材清洁工具，具有可渗透的清洁头
公开(公告)号：US06554010B1
公开(公告)日：2003-04-29
申请号：US09626162
申请日：2000-07-26
申请人： Keizo Hirose , Kenji Sekiguchi , Tomohide Inoue , Takanori Miyazaki , Kinya Ueno
发明人： Keizo Hirose , Kenji Sekiguchi , Tomohide Inoue , Takanori Miyazaki , Kinya Ueno
IPC分类号： B08B300
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/04 , B08B2203/0288 , Y10S134/902
摘要： In a cleaning apparatus for substrates, such as semiconductor wafers, a permeable core member 68 made of a synthetic resin is supplied with distilled water from a distilled water supply path 60 within a head portion 66 of a cleaning tool 24. A planar portion 72 is provided on the lower surface of the core member 68 and a porous resin sheet 69 is attached to the outer surface of the core member 68, to cover it. The cleaning tool 24 is provided with an air bearing cylinder 30 that imparts a vertical driving force to a rod 31 that presses against the surface of a wafer W which is being rotated, and the distilled water supply path 60 is provided within the rod 31. The distilled water supplied from the distilled water supply path 60 permeates through the core member 68 and the porous resin sheet 69 and is sent out of the head 66 so that a flowing film of distilled water is formed on the surface of the wafer W. Thus contamination and damage of the substrate is prevented and the shape of the head is not destroyed.
摘要翻译：在诸如半导体晶片的基板的清洁装置中，由清洁工具24的头部66内的蒸馏水供应路径60向合成树脂制成的可渗透芯部件68供应蒸馏水。平面部分72是设置在芯构件68的下表面上，并且多孔树脂片69附接到芯构件68的外表面以覆盖其。清洁工具24设置有空气轴承缸30，该空气轴承缸30向压在正在旋转的晶片W的表面的杆31施加垂直驱动力，并且蒸馏水供应路径60设置在杆31内。从蒸馏水供给路径60供给的蒸馏水透过芯部件68和多孔树脂片69，从头部66送出，从而在晶片W的表面上形成蒸馏水的流动膜。防止基板的污染和损坏，并且头部的形状不被破坏。

10. 发明授权

US06319329B1 Method of cleaning objects to be processed 有权
标题翻译：清洁待处理物体的方法
公开(公告)号：US06319329B1
公开(公告)日：2001-11-20
申请号：US09432422
申请日：1999-11-02
申请人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
发明人： Yuji Kamikawa , Kinya Ueno , Satoshi Nakashima
IPC分类号： B08B310
CPC分类号： H01L21/67028 , B08B3/08 , Y10S134/902
摘要： A method for cleaning an object to be processed in which the atmosphere in a drying chamber is replaced by an inert gas prior to placing an object to be cleaned from an external environment into the chamber. The object is then transported by an elongated retaining member from the drying chamber through a lower opening in the chamber into a processing bath disposed below the chamber. The object is then cleaned in the processing bath. The object is then transported from the processing bath to the drying chamber where it is dried by filling the atmosphere of the drying chamber with organic solvent. The cleaning process in the cleaning bath is carried out while the bath is screened by a nitrogen-gas curtain. The method also includes opening a lid of the chamber prior to insertion of the object into the chamber and closing the lid after insertion of the object, as well as the opening and closing of the lower opening in the chamber. The method may also include exhausting an atmosphere in the drying chamber while supplying inert gas, decompressing the atmosphere in the drying chamber as well as chemical cleaning, water cleaning, and ozone cleaning of the object.
摘要翻译：一种用于清洁待处理物体的方法，其中在将待清洁物体从外部环境放置到所述室中之前，将干燥室中的气氛替换为惰性气体。然后，物体通过细长的保持构件从干燥室通过室中的下部开口输送到设置在室下方的处理槽中。然后将物体在处理槽中清洁。然后将物体从处理槽输送到干燥室，在其中通过用有机溶剂填充干燥室的气氛将其干燥。在通过氮气幕筛选浴的同时进行清洗浴中的清洁处理。该方法还包括在将物体插入室内之前打开腔室的盖子，并且在插入物体之后关闭盖子以及在腔室中打开和关闭下部开口。该方法还可以包括在供应惰性气体的同时在干燥室中排出气氛，减少干燥室中的气氛以及化学清洁，水清洗和对象的臭氧清洁。

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