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1. 发明申请

US20100178765A1 Metal Polishing Slurry and Method of Polishing a Film to be Polished 有权
标题翻译：金属抛光浆料和抛光薄膜抛光方法
公开(公告)号：US20100178765A1
公开(公告)日：2010-07-15
申请号：US12159419
申请日：2006-12-27
申请人： Yutaka Nomura , Hiroshi Nakagawa , Sou Anzai , Ayako Tobita , Takafumi Sakurada , Katsumi Mabuchi
发明人： Yutaka Nomura , Hiroshi Nakagawa , Sou Anzai , Ayako Tobita , Takafumi Sakurada , Katsumi Mabuchi
IPC分类号： H01L21/304 , H01L21/306 , C09K13/00 , C09K13/06
CPC分类号： C11D11/0047 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a metal polishing liquid capable of CMP at a high Cu polishing rate and solving the problems: (a) generation of scratches attributable to solid particles, (b) generation of deteriorations in flatness such as dishing and erosion, (c) complexity in a washing process for removing abrasive particles remaining on the surface of a substrate after polishing, and (d) higher costs attributable to the cost of a solid abrasive itself and to waste liquid treatment, as well as a method of polishing a film to be polished by using the same. Disclosed are a metal polishing liquid which comprises a metal oxidizer, a metal oxide solubilizer, a metal anticorrosive, and a water-soluble polymer having an anionic functional group with a weight-average molecular weight of 8,000 or more and has pH 1 or more to 3 or less, and a method of polishing a film to be polished, which comprises supplying the above metal polishing liquid onto a polishing cloth of a polishing platen and simultaneously relatively moving the polishing platen and a substrate having a metallic film to be polished while the substrate is pressed against the polishing cloth.
摘要翻译：本发明提供一种能够以高Cu抛光速率进行CMP处理的金属抛光液，并且解决了以下问题：（a）产生由固体颗粒引起的划痕，（b）产生诸如凹陷和腐蚀的平坦度的劣化，（c）用于去除抛光后残留在基材表面上的磨料颗粒的洗涤过程中的复杂性，以及（d）由于固体磨料本身的成本和废液处理造成的更高成本，以及抛光膜的方法通过使用它来抛光。公开了一种金属抛光液，其包含金属氧化剂，金属氧化物增溶剂，金属防腐蚀剂和具有重均分子量为8000以上的阴离子官能团的水溶性聚合物，其pH为1以上至 3以下，以及抛光被研磨膜的方法，该方法包括将上述金属抛光液供给到研磨台板的研磨布上，同时相对移动研磨台板和具有待研磨金属膜的基板，同时基板被压在抛光布上。

2. 发明授权

US08791019B2 Metal polishing slurry and method of polishing a film to be polished 有权
标题翻译：金属抛光浆料及抛光方法
公开(公告)号：US08791019B2
公开(公告)日：2014-07-29
申请号：US12159419
申请日：2006-12-27
申请人： Yutaka Nomura , Hiroshi Nakagawa , Sou Anzai , Ayako Tobita , Takafumi Sakurada , Katsumi Mabuchi
发明人： Yutaka Nomura , Hiroshi Nakagawa , Sou Anzai , Ayako Tobita , Takafumi Sakurada , Katsumi Mabuchi
IPC分类号： H01L21/306 , C11D11/00 , H01L21/321 , C09G1/02
CPC分类号： C11D11/0047 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a metal polishing liquid capable of CMP at a high Cu polishing rate and solving the problems: (a) generation of scratches attributable to solid particles, (b) generation of deteriorations in flatness such as dishing and erosion, (c) complexity in a washing process for removing abrasive particles remaining on the surface of a substrate after polishing, and (d) higher costs attributable to the cost of a solid abrasive itself and to waste liquid treatment, as well as a method of polishing a film to be polished by using the same. Disclosed are a metal polishing liquid which comprises a metal oxidizer, a metal oxide solubilizer, a metal anticorrosive, and a water-soluble polymer having an anionic functional group with a weight-average molecular weight of 8,000 or more and has pH 1 or more to 3 or less, and a method of polishing a film to be polished, which comprises supplying the above metal polishing liquid onto a polishing cloth of a polishing platen and simultaneously relatively moving the polishing platen and a substrate having a metallic film to be polished while the substrate is pressed against the polishing cloth.
摘要翻译：本发明提供一种能够以高Cu抛光速率进行CMP处理的金属抛光液，并且解决了以下问题：（a）产生由固体颗粒引起的划痕，（b）产生诸如凹陷和腐蚀的平坦度的劣化，（c）用于去除抛光后残留在基材表面上的磨料颗粒的洗涤过程中的复杂性，以及（d）由于固体磨料本身的成本和废液处理造成的更高成本，以及抛光膜的方法通过使用它来抛光。公开了一种金属抛光液，其包含金属氧化剂，金属氧化物增溶剂，金属防腐蚀剂和具有重均分子量为8000以上的阴离子官能团的水溶性聚合物，其pH为1以上至 3以下，以及抛光被研磨膜的方法，该方法包括将上述金属抛光液供给到研磨台板的研磨布上，同时相对移动研磨台板和具有待研磨金属膜的基板，同时基板被压在抛光布上。

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