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    • 2. 发明授权
    • Block noise detector and block noise eliminator
    • 块噪声检测器和阻塞噪声消除器
    • US06738528B1
    • 2004-05-18
    • US09463215
    • 2000-01-21
    • Yutaka NioSatoshi OkamotoKatsumi TeraiNaoji OkumuraKazuhito Tanaka
    • Yutaka NioSatoshi OkamotoKatsumi TeraiNaoji OkumuraKazuhito Tanaka
    • G06K940
    • H04N19/865H04N19/527H04N19/80H04N19/86
    • A vertical HPF and a horizontal HPF receive a video signal 101, and extract only a high frequency component in the vertical/horizontal directions, respectively. Absolute value taking parts take an absolute value of the high frequency components, respectively, and change their values to positive values. A horizontal accumulating/adding part and a vertical accumulating/adding part accumulate/add an input signal so as to output a vertical one-dimensional signal and a horizontal one-dimensional signal, respectively, each periodically having a peak value in the respective vertical and horizontal directions. A horizontal peak detecting part detects a horizontal peak position according to the horizontal one-dimensional signal. A vertical peak detecting part detects a vertical peak position according to the vertical one-dimensional signal and identifies a format thereof. A binarization part obtains a block boundary image, according to the horizontal peak position and the vertical peak position, in which pixel positions having a peak are provided with 1 and remaining pixel positions are provided with 0. In this manner, even if a block boundary to eliminate block noise thereon is not clearly identified, it becomes possible to correctly detect and eliminate the block boundary.
    • 垂直HPF和水平HPF接收视频信号101,并且仅分别在垂直/水平方向提取高频分量。 绝对值取零件分别取高频分量的绝对值,并将它们的值改为正值。 水平累积/加法部分和垂直累积/相加部分分别累积/加入输入信号,以分别输出垂直一维信号和水平一维信号,每个信号周期性地具有在垂直方向上的峰值, 水平方向。 水平峰值检测部根据水平一维信号检测水平峰值位置。 垂直峰值检测部分根据垂直一维信号检测垂直峰值位置并识别其格式。 二值化部分根据水平峰值位置和垂直峰值位置获得块边界图像,其中具有峰值的像素位置为1,并且剩余像素位置被设置为0.以这种方式,即使块边界 为了消除其上的块噪声没有被清楚地识别,可以正确地检测和消除块边界。
    • 7. 发明申请
    • PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE
    • 光电转换元件,光电转换元件组件和光电转换模块
    • US20110057283A1
    • 2011-03-10
    • US12674967
    • 2008-07-25
    • Akiko TsunemiSatoshi Okamoto
    • Akiko TsunemiSatoshi Okamoto
    • H01L31/042H01L31/04
    • H01L31/022425H01L31/02245H01L31/068Y02E10/547
    • To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer brought into contact with the first semiconductor layer and arranged at least in part on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided so as to be electrically connected to the second semiconductor layer on its light-receiving side; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element.
    • 提供一种光电转换元件,其允许通过廉价的布线构件连接相邻的光电转换元件。 本发明的光电转换元件包括:第一导电类型的第一半导体层; 布置在所述第一半导体层的背侧并电连接到所述第一半导体层的第一电极; 第二导电类型的第二半导体层,第二半导体层与第一半导体层接触并且至少部分地布置在第一半导体层的光接收侧上; 光接收面侧电极,被设置为与其受光侧的第二半导体层电连接; 布置在所述第一半导体层的背面上并与所述第一半导体层电分离但电连接到所述第二半导体层的第二电极; 以及穿透所述第一半导体层的穿透连接部,与所述第一半导体层电分离,但是将所述受光面侧电极与所述第二电极电连接,所述光电转换元件的特征在于,所述第一电极和 第二电极与通过光电转换元件的中心的中心轴线等距离设置。
    • 8. 发明申请
    • Method for Forming Multi-Layer Coating Film
    • 多层涂膜的形成方法
    • US20090266714A1
    • 2009-10-29
    • US11887587
    • 2006-04-07
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku OkadaTakehiro Nito
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku OkadaTakehiro Nito
    • C09D5/44C25D9/12
    • C25D13/22C09D5/4492
    • The present invention is to provide a method for forming a multi-layer coating film, which can combine a pre-treating step conducted for a metal substrate, before electrodeposition coating, and an electrodeposition coating step. The method comprises: a step of dipping a material to be coated in an aqueous coating composition comprising (A) a rare earth metal compound, (B) a base resin having a cationic group, and (C) a curing agent, wherein a content of the rare earth metal compound (A) in the aqueous coating composition is limited to specific range; a pre-treating step of applying a voltage of less than 50 V in the aqueous coating composition, wherein the material to be coated is used as a cathode; and an electrodeposition coating of applying a voltage of 50 to 450 V in the aqueous coating composition, wherein the material to be coated is used as a cathode.
    • 本发明提供一种形成多层涂膜的方法,其可以在电沉积涂覆之前组合对金属基材进行的预处理步骤和电沉积涂布步骤。 该方法包括:将待涂覆的材料浸渍在包含(A)稀土金属化合物,(B)具有阳离子基团的基础树脂和(C)固化剂)的水性涂料组合物中,其中含量 的水性涂料组合物中的稀土金属化合物(A)被限制在特定范围内; 在水性涂料组合物中施加小于50V的电压的预处理步骤,其中待涂覆的材料用作阴极; 以及在水性涂料组合物中施加50-450V的电压的电沉积涂层,其中待涂覆的材料用作阴极。