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1. 发明申请

US20120325291A1 METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE 审中-公开
标题翻译：背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
公开(公告)号：US20120325291A1
公开(公告)日：2012-12-27
申请号：US13576247
申请日：2011-01-27
申请人： Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
发明人： Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/048
CPC分类号： H01L31/02168 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.
摘要翻译：一种背电极型太阳能电池的制造方法，其特征在于，具有以下工序：在所述硅基板的受光面上涂布含有杂质的溶液的溶液，形成受光面扩散层和防反射膜导电类型与硅衬底，钛醇盐和醇相同，随后热处理，并且通过热处理在硅衬底的光接收表面上形成光接收表面钝化膜; 背光电极型太阳能电池，其包含受光面扩散层和在受光面扩散层上的防反射膜，所述防反射膜由含有与硅衬底导电类型相同的杂质的钛氧化物构成; 以及包括背面电极型太阳能电池的背面电极型太阳能电池模块。

2. 发明授权

US07541621B2 Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device 有权
标题翻译：具有电流变窄部分的半导体发光器件和用于半导体发光器件的制造方法
公开(公告)号：US07541621B2
公开(公告)日：2009-06-02
申请号：US11207794
申请日：2005-08-22
申请人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ooyama , Osamu Yamamoto
发明人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ooyama , Osamu Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/20 , H01L33/38
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.
摘要翻译：半导体发光器件包括第一导电型第一半导体层; 发射层; 第二导电型第二半导体层; 以及对来自发光层的光束透明并直接接合到第二半导体层的第二导电型透明基板。透明基板具有与发射层相反侧的发射层几乎平行的平行表面和与平行表面相邻并且倾斜于平行表面的倾斜表面。在平行表面上全反射的光束和在透明基板的侧面全反射的光束以小于临界角的角度入射到倾斜表面，并且从半导体发光器件发射出去。

3. 发明授权

US07495263B2 Semiconductor light-emitting device and manufacturing method therefor 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07495263B2
公开(公告)日：2009-02-24
申请号：US09778045
申请日：2001-02-07
申请人： Takahisa Kurahashi , Hiroyuki Hosoba , Hiroshi Nakatsu , Tetsurou Murakami , Shouichi Ohyama
发明人： Takahisa Kurahashi , Hiroyuki Hosoba , Hiroshi Nakatsu , Tetsurou Murakami , Shouichi Ohyama
IPC分类号： H01L33/00 , H01L31/0328
CPC分类号： H01L33/22 , H01L33/10 , H01L33/30
摘要： On a GaAs substrate (1), are formed a DBR (Distributed Bragg Reflector) (3), and a light-emitting layer (5) made of a plurality of layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1) above the DBR (3). A semiconductor layer or a plurality of semiconductor layers (6)-(10) having a number of layers of 1 or more are formed on the light-emitting layer (5), and a grating pattern for scattering light is formed on a surface of the semiconductor layer (9) by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.
摘要翻译：在GaAs衬底（1）上形成DBR（分布式布拉格反射器）（3）和由多层AlyGazIn1-y-zP（0≤y≤1）构成的发光层（5），0 <= z <= 1）。在发光层（5）上形成有多个层数为1以上的半导体层或多个半导体层（6） - （10），在半导体层（9）通过光刻法和用硫酸/过氧化氢腐蚀剂蚀刻。因此，提供了发光波长的辐射角依赖性小的半导体器件及其制造方法。

4. 发明申请

US20050116309A1 Semiconductor light-emitting element, manufacturing method therefor and semiconductor device 审中-公开
标题翻译：半导体发光元件及其制造方法和半导体器件
公开(公告)号：US20050116309A1
公开(公告)日：2005-06-02
申请号：US10971688
申请日：2004-10-25
申请人： Shouichi Ohyama , Tetsurou Murakamii , Takahisa Kurahashi , Osamu Yamamoto , Hiroshi Nakatsu
发明人： Shouichi Ohyama , Tetsurou Murakamii , Takahisa Kurahashi , Osamu Yamamoto , Hiroshi Nakatsu
IPC分类号： H01L21/00 , H01L27/14 , H01L27/15 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/42 , H01L33/62
CPC分类号： H01L33/20 , H01L33/0079
摘要： A semiconductor light-emitting element has a semiconductor laminate including an active layer emitting light of a prescribed emission wavelength and a step located at an in-depth position beyond the active layer. The element also has a substrate transparent to the emission wavelength, a first electrode provided on a surface of the semiconductor laminate, and a second electrode provided on the step. The substrate transparent to the emission wavelength improves the external emission efficiency. The locations of the first and second electrodes substantially prevent current to flow through a direct connection interface between the semiconductor laminate and the substrate. Thereby, the element exhibits satisfactory electrical characteristics even when an incomplete junction attributed to hillock or the like is generated in the direct connection interface.
摘要翻译：半导体发光元件具有包括发射规定发射波长的光的有源层和位于有源层之外的深度位置的台阶的半导体层叠体。元件还具有对发射波长透明的基板，设置在半导体层叠体的表面上的第一电极和设置在该台阶上的第二电极。对发射波长透明的衬底提高了外部发射效率。第一电极和第二电极的位置基本上防止电流流过半导体层压体和衬底之间的直接连接界面。因此，即使在直接连接界面中产生归因于小丘等的不完全连接，该元件也表现出令人满意的电特性。

5. 发明授权

US06822266B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US06822266B2
公开(公告)日：2004-11-23
申请号：US10153874
申请日：2002-05-24
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Tetsurou Murakami , Shouichi Ohyama
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Tetsurou Murakami , Shouichi Ohyama
IPC分类号： H01L2715
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/38
摘要： A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concentration of 8×1017 cm−3. Thereby, the half-value width of the light-emitting spectrum is 25 nm or more, which is wider than in the case of no doping. Thus, temperature dependence of an optical output is reduced.
摘要翻译：半导体发光器件包括具有单量子阱结构的有源层。单量子阱结构能够实现高速响应，使得上升和下降时间为2.1ns。此外，单量子阱活性层以8×10 17 cm -3的浓度掺杂Zn。因此，发光光谱的半值宽度为25nm以上，比不掺杂的情况宽。因此，光输出的温度依赖性降低。

6. 发明授权

US06797986B1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US06797986B1
公开(公告)日：2004-09-28
申请号：US09607965
申请日：2000-06-30
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/105 , H01L33/38 , H01L33/42 , H01L33/46
摘要： Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction [011] or [0-1-1] from the plane (100) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of AlxGa1-xAs (0 ≦x≦1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.
摘要翻译：提供了一种谐振腔型发光二极管，具有优异的耐湿性和光输出不饱和，甚至几十mA，适合批量生产。半导体发光元件具有由在GaAs衬底上以恒定距离设置的一组多层反射膜形成的谐振器，该GaAs衬底在方向[011]或[0-1-1]上以不小于2度的角度倾斜 ]和布置在共振器的驻波环路位置的发光层，其中设置在GaAs衬底侧的多层反射膜由多层Al x Ga 1-x As（0 < = x <= 1），并且设置在GaAs衬底的相对侧上的多层反射膜由多层AlyGazIn1-y-zP（0≤y≤1,0

7. 发明授权

US06794687B1 Semiconductor light-emitting device and method for fabricating the device 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06794687B1
公开(公告)日：2004-09-21
申请号：US09645571
申请日：2000-08-25
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L33/105 , H01L33/22 , H01L2933/0016 , H01L2933/0083
摘要： An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al0.5Ga0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
摘要翻译： n型AlAs / n型Al0.5Ga0.5As DBR层和p型（Al0.2Ga0.8）0.5In0.5P / p型Al0.5In0.5P DBR层形成在n型 GaAs衬底以使得反射光谱以650nm为中心，并且谐振波长为650nm。形成量子阱有源层（发光层），使得在由两个DBR层构成的谐振器中产生的驻波的腹部位置的发光峰值波长变为650nm。在作为由p型电极包围的发光面的p型Al0.5Ga0.5As光扩散层的表面上形成光栅图案。通过使发光面粗糙化，从发光层发出的光在各个方向上扩散，减少了发射光波长的辐射角依赖性。

8. 发明授权

US07285436B2 Method of manufacturing a semiconductor light-emitting device 有权
标题翻译：制造半导体发光装置的方法
公开(公告)号：US07285436B2
公开(公告)日：2007-10-23
申请号：US10919270
申请日：2004-08-17
申请人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
发明人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
IPC分类号： H01L33/62 , H01L21/316 , H01L33/00 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/30 , H01L33/56
CPC分类号： H01L33/145 , H01L33/0095 , H01L33/10 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1-xAs layer and the active layer, in this order. Part of the AlxGa1-xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).
摘要翻译：半导体发光器件即使具有较少数量的光反射层也呈现高反射率，并且允许从有源层发射的光被有效地提取到外部。该半导体发光器件通过半导体发光器件制造方法以高质量的生产率制造，该半导体发光器件制造方法包括以下步骤：在半导体衬底上提供产生具有特定波长的光的有源层。在半导体衬底上依次堆叠Al x Ga 1-x As As层和有源层。相对于Al的一部分Al x Ga 1-x O As层被改变为AlO层（其中y是正实的数）。

9. 发明申请

US20060094140A1 Manufacturing method for semiconductor light emitting device 审中-公开
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20060094140A1
公开(公告)日：2006-05-04
申请号：US11261557
申请日：2005-10-31
申请人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/0079
摘要： A manufacturing method for a semiconductor light emitting device is provided. The method includes preparing a first wafer in which at least one semiconductor layer including the emitter layer is formed; disposing a second wafer transparent to an emission wavelength of the emitter layer on the surface of the first wafer; providing a bonding failure prevention structure to at least either the first wafer or the second wafer for preventing bonding failures of the first wafer and the second wafer; and applying compressive force to a contact face between the first wafer and the second wafer while at the same time, heating the contact face. The first and second wafers can be bonded across their entire surfaces without causing bonding failure.
摘要翻译：提供了一种用于半导体发光器件的制造方法。该方法包括制备其中形成包括发射极层的至少一个半导体层的第一晶片; 将第二晶片设置在第一晶片的表面上对发射层的发射波长透明; 为所述第一晶片或所述第二晶片中的至少任一个提供接合故障防止结构，以防止所述第一晶片和所述第二晶片的接合故障; 并且在同时对第一晶片和第二晶片之间的接触面施加压力，同时加热接触面。第一和第二晶片可以在其整个表面上结合，而不会引起接合故障。

10. 发明申请

US20060043392A1 Semiconductor light emitting device and manufacturing method for semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件的制造方法
公开(公告)号：US20060043392A1
公开(公告)日：2006-03-02
申请号：US11207794
申请日：2005-08-22
申请人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ooyama , Osamu Yamamoto
发明人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ooyama , Osamu Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/20 , H01L33/38
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.
摘要翻译：半导体发光器件包括第一导电型第一半导体层; 发射层; 第二导电型第二半导体层; 以及对来自发光层的光束透明并直接接合到第二半导体层的第二导电型透明基板。透明基板具有与发射层相反侧的发射层几乎平行的平行表面和与平行表面相邻并且倾斜于平行表面的倾斜表面。在平行表面上全反射的光束和在透明基板的侧面全反射的光束以小于临界角的角度入射到倾斜表面，并且从半导体发光器件发射出去。

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