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1. 发明授权

US4789888A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4789888A
公开(公告)日：1988-12-06
申请号：US249498
申请日：1981-03-31
申请人： Yutaka Miyata , Takao Chikamura , Takuo Shibata , Shinji Fujiwara
发明人： Yutaka Miyata , Takao Chikamura , Takuo Shibata , Shinji Fujiwara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665 , H01L27/14672
摘要： In a solid-state image sensor of the type consisting of a semiconductor circuit substrate capable of charge transfer or having the switching function and a photoconductive layer or a photosensor, a pattern of light-shielding checks is formed between the surface of the semiconductor circuit substrate and a transparent electrode on the photoconductive layer or a photosensor so as to optically shield the gaps or spaces between electrodes which are provided for respective picture elements and which are connected to their associated diode regions and the photoconductive layer or photosensor, whereby blooming can be suppressed without causing a decrease in sensitivity.
摘要翻译：在由能够电荷转移或具有开关功能的半导体电路基板和光电导层或光电传感器构成的类型的固态图像传感器中，在半导体电路基板的表面之间形成遮光检查图案以及在光电导层或光电传感器上的透明电极，以光学屏蔽为各图像元件提供的电极之间的间隙或间隔，并连接到它们相关联的二极管区域和光电导层或光电传感器，从而可以抑制起霜而不会导致灵敏度的降低。

2. 发明授权

US4661830A Solid state imager 失效
标题翻译：固态成像仪
公开(公告)号：US4661830A
公开(公告)日：1987-04-28
申请号：US626730
申请日：1984-07-02
申请人： Yoshio Ohta , Takao Chikamura , Yutaka Miyata , Kohsaku Yano , Shinji Fujiwara
发明人： Yoshio Ohta , Takao Chikamura , Yutaka Miyata , Kohsaku Yano , Shinji Fujiwara
IPC分类号： H01L27/146 , H01L27/14 , H01L29/78 , H01L31/00
CPC分类号： H01L27/14672
摘要： This invention discloses a high efficiency solid state imager combining a semiconductor substrate having a charge transfer function and a photoelectric conversion film, wherein a high frequency transfer pulse having a frequency higher than that of a vertical transfer pulse is applied for a prescribed time during the vertical blanking period; voltages with different values are applied to a transparent electrode provided on the above-mentioned photoelectric conversion film in the first and second period of the period with the presence of the above-mentioned high frequency transfer pulse; and a voltage differing with each field is applied to the above-mentioned transparent electrode during the vertical blanking period, whereby blooming, highlight lag and flicker due to an intense light are considerably suppressed.
摘要翻译：本发明公开了一种组合具有电荷传递函数的半导体衬底和光电转换膜的高效率固态成像器，其中具有高于垂直传输脉冲的频率的高频传输脉冲在垂直方向施加规定时间消隐期在上述第一和第二周期中存在上述高频传输脉冲，将不同值的电压施加到设置在上述光电转换膜上的透明电极; 并且在垂直消隐期间，对上述透明电极施加与各场不同的电压，从而显着地抑制了由于强光引起的闪光，高光滞后和闪烁。

3. 发明授权

US4670766A Anti-blooming image sensor 失效
标题翻译：防霜图像传感器
公开(公告)号：US4670766A
公开(公告)日：1987-06-02
申请号：US816980
申请日：1986-01-07
申请人： Yutaka Miyata , Takao Chikamura , Shinji Fujiwara
发明人： Yutaka Miyata , Takao Chikamura , Shinji Fujiwara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14672
摘要： A solid-state image sensor is formed of the combination of a semiconductor substrate having a charge transfer function and a photoconductive film. In this solid-state image sensor, blooming suppressing capability is greatly increased by controlling the following potentials to fixed potentials, that is, (1) the potential of a transparent electrode formed on the photoconductive film, (2) the channel potential of a MOS field-effect transistor formed of a charge transfer stage and a gate electrode which are formed together with a Si diode in the semiconductor substrate in which the diode is electrically connected to the photoconductive film, and (3) the barrier potential of the charge transfer stage.
摘要翻译：固态图像传感器由具有电荷传递函数的半导体衬底和光电导膜的组合形成。在该固态图像传感器中，通过将以下电位控制为固定电位，即（1）形成在光电导膜上的透明电极的电位，（2）MOS的沟道电位由半导体衬底中与二极管电连接的光电导膜形成与电荷转移级和栅电极形成的场效应晶体管，以及（3）电荷转移级的势阱电位。

4. 发明授权

US4514765A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4514765A
公开(公告)日：1985-04-30
申请号：US408677
申请日：1982-08-16
申请人： Yutaka Miyata , Takao Chikamura , Shinji Fujiwara
发明人： Yutaka Miyata , Takao Chikamura , Shinji Fujiwara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H04N3/14
CPC分类号： H01L27/14665 , Y10S348/91
摘要： A solid-state image sensor has a semiconductor substrate and a photoconductive film formed on the semiconductor substrate. The photoconductive film has a charge transfer function and subjects each field or group of picture elements to interlaced scanning. Flicker which otherwise results from inevitable differences between the magnitudes of setting voltages or areas of the photoconductive film portions with respect to the respective fields or groups of picture elements is significantly suppressed by changing the voltages applied to the photoconductive film portions with respect to each field or group of the interlaced picture element.
摘要翻译：固态图像传感器具有形成在半导体衬底上的半导体衬底和光电导膜。光电导膜具有电荷转移功能，并对每个场或一组图像元素进行隔行扫描。否则由相对于像素的各个场或组的光电导膜部分的设定电压或区域的大小之间的不可避免的差异产生的闪烁通过改变施加到光电导膜部分上的电压相对于每个场或隔行扫描图像元素组。

5. 发明授权

US4447720A Solid-state image pickup element and process for fabricating the same 失效
标题翻译：固体摄像元件及其制造方法
公开(公告)号：US4447720A
公开(公告)日：1984-05-08
申请号：US398569
申请日：1982-07-15
申请人： Kazufumi Ogawa , Takao Chikamura , Takuo Shibata
发明人： Kazufumi Ogawa , Takao Chikamura , Takuo Shibata
IPC分类号： G03F7/26 , H01L27/146 , H01L31/08
CPC分类号： G03F7/26 , H01L27/14603
摘要： A highly sensitive and high-density picture element solid-state image pickup element. The image pickup element includes a picture element portion formed on a semiconductor wafer, a driving circuit for driving the picture element portion, a photoconductive layer formed on the picture element portion and a transparent electrode formed on the photoconductive layer. On top of the transparent electrode is a layer of photosetting resin and a color filter bonded to the photosetting resin with an adhesive agent having substantially similar or the same composition and optical properties as the photosetting resin.
摘要翻译：高灵敏度和高密度的图像元素固态摄像元件。图像拾取元件包括形成在半导体晶片上的像素部分，用于驱动像素部分的驱动电路，形成在像素部分上的光电导层和形成在光电导层上的透明电极。在透明电极的顶部是一层光固化树脂和一个滤色片，它与光固化树脂结合，其粘合剂具有与光固化树脂基本上相似或相同的组成和光学特性。

6. 发明授权

US4345021A Solid-state image pickup element and process for fabricating the same 失效
标题翻译：固体摄像元件及其制造方法
公开(公告)号：US4345021A
公开(公告)日：1982-08-17
申请号：US188580
申请日：1980-09-18
申请人： Kazufumi Ogawa , Takao Chikamura , Takuo Shibata
发明人： Kazufumi Ogawa , Takao Chikamura , Takuo Shibata
IPC分类号： G03F7/00 , H01L27/146 , G03C5/00
CPC分类号： H01L27/14689 , G03F7/0007 , H01L27/14603 , H01L27/14621 , H01L27/14667
摘要： A highly sensitive and high-density picture element solid-state image pickup element and a process for fabricating the same which is featured in (a) that in the step for patterning a photoconductive layer, a protective pattern resisting an etchant is formed by using an ultraviolet-ray-setting resin which is also used in the step for bonding a color filter and then the undesired areas of the photoconductive layer, which has been formed over the whole surface of a wafer, are removed and (b) that the color filter having a stripe or mosaic pattern is bonded to the protective pattern with the same ultraviolet-ray-setting resin. Alternatively, after the color filter has been bonded, the undesired areas of the photoconductive layer are removed with the color filter used as an etching mask.
摘要翻译：一种高灵敏度和高密度像素固体摄像元件及其制造方法，其特征在于（a）在图案化光电导层的步骤中，通过使用除去在滤色片的整个表面上形成的光电导层的不希望的区域，并且（b）滤色器使用相同的紫外线固化树脂将具有条纹或镶嵌图案的保护图案粘合到保护图案上。或者，在滤色器已经结合之后，用作为蚀刻掩模的滤色器除去光电导层的不需要的区域。

7. 发明授权

US4354104A Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4354104A
公开(公告)日：1982-10-12
申请号：US147276
申请日：1980-05-06
申请人： Takao Chikamura , Shinji Fujiwara , Masakazu Fukai
发明人： Takao Chikamura , Shinji Fujiwara , Masakazu Fukai
IPC分类号： H01L27/146 , H01J40/14
CPC分类号： H01L27/14667 , H01L27/14621 , H01L27/14623 , H01L27/14672
摘要： In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically shield the boundaries or spacing between first electrodes each of which represents a picture element and which electrically couples between the scanning device and the photosensor, whereby a high resolution can be obtained and concurrently effects of blooming can be remarkably improved.
摘要翻译：在其中在由电荷转移元件或MOS矩阵元件组成的扫描装置上形成光电导物质作为光电传感器的类型的固态图像拾取装置中，提供遮光装置以光学屏蔽边界或间隔在每个它们表示像素并且在扫描装置和光电传感器之间电耦合的第一电极之间，由此可以获得高分辨率，同时可以显着提高起霜的影响。

8. 发明授权

US4236829A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4236829A
公开(公告)日：1980-12-02
申请号：US6129
申请日：1979-01-24
申请人： Takao Chikamura , Shinji Fujiwara , Yasuaki Terui , Masakazu Fukai
发明人： Takao Chikamura , Shinji Fujiwara , Yasuaki Terui , Masakazu Fukai
IPC分类号： H01L27/146 , H01L29/161 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14665
摘要： A solid-state image sensor is provided, which has a high spectral response over the whole visible light range and wherein a photoconductor layer having a hetero-junction defined by a hole blocking layer and a layer consisting of a system (Zn.sub.1-x Cd.sub.x Te).sub.1-y (In.sub.2 Te.sub.3).sub.y is formed over a semiconductor substrate which has charge transfer type unit cells or X-Y switching matrix type unit cells.
摘要翻译：提供固态图像传感器，其在整个可见光范围内具有高光谱响应，并且其中具有由空穴阻挡层和由系统（Zn1-xCdxTe）1组成的层）限定的异质结的感光体层 -y（In2Te3）y形成在具有电荷转移型单元电池或XY开关矩阵型单元电池的半导体衬底上。

9. 发明授权

US4271420A Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4271420A
公开(公告)日：1981-06-02
申请号：US119187
申请日：1980-02-06
申请人： Takao Chikamura , Kazufumi Ogawa , Yasuaki Terui , Shinji Fujiwara , Masakazu Fukai
发明人： Takao Chikamura , Kazufumi Ogawa , Yasuaki Terui , Shinji Fujiwara , Masakazu Fukai
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14667 , H01L27/14672 , H04N3/1556
摘要： In a solid-state image pickup device of the type in which a photosensitive or photoconductive film is formed over a substrate capable of charge-transfer or X-Y address scanning and an electrode is formed over the photosensitive or photoconductive film, a means for applying to the electrode a voltage having an amplitude proportional to the amount of incident light, whereby blooming may be minimized and an automatic aperture control function may be attained. Because the voltage applied to the electrode over the photosensitive or photoconductive film is set so that the sensitivity of the photoconductive film may be decreased when a light image of high intensity falls on the device, blooming may be avoided.
摘要翻译：在其中在能够进行电荷转移或XY地址扫描的基板上形成感光或光电导膜并且在感光或感光膜上形成电极的固态图像拾取装置中，电极具有与入射光量成比例的振幅的电压，从而可以最小化起霜，并且可以实现自动孔径控制功能。因为施加到感光或感光膜上的电极上的电压被设定为使得当高强度的光图像落在器件上时光电导膜的灵敏度可能降低，因此可以避免起霜。

10. 发明授权

US5217401A Method of manufacturing a field-emission type switching device 失效
标题翻译：场致发射型开关装置的制造方法
公开(公告)号：US5217401A
公开(公告)日：1993-06-08
申请号：US836558
申请日：1992-02-18
申请人： Masanori Watanabe , Hiroyuki Kado , Takao Chikamura , Nobuyuki Yoshiike
发明人： Masanori Watanabe , Hiroyuki Kado , Takao Chikamura , Nobuyuki Yoshiike
IPC分类号： H01J3/02 , H01J21/10
CPC分类号： H01J21/105 , H01J3/022
摘要： A field-emission type switching device includes a substrate formed with a recess having a straight edge and serrated edge opposite to the straight edge. A gate electrode is formed at the bottom of the recess. An emitter electrode is provided over the substrate and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess so as to provide an emitter overhanging portion overhanging the recess. Similarly, a collector electrode is provided over the substrate means and formed with a straight edge which is slightly off alignment with the straight edge of the recess so as to provide a collector overhanging portion overhanging the recess. The emitter and collector electrodes are disposed in one plate and the gate electrode is disposed in another plane below the one plane.
摘要翻译：场发射型切换装置包括形成有具有与直边相反的直边缘和锯齿状边缘的凹部的基板。栅电极形成在凹部的底部。发射电极设置在衬底上并且形成有锯齿形边缘，该锯齿形边缘与凹槽的锯齿形边缘稍微偏离对准，以便提供突出于凹部的发射体悬伸部分。类似地，集电极设置在衬底装置上方并且形成有直线边缘，其与凹部的直边稍微偏离对准，以提供突出于凹部的收集器悬伸部分。发射极和集电极设置在一个板中，栅电极设置在一个平面下方的另一个平面中。

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