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1. 发明申请

US20120229012A1 ION SOURCE 失效
标题翻译：离子源
公开(公告)号：US20120229012A1
公开(公告)日：2012-09-13
申请号：US13416369
申请日：2012-03-09
申请人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
发明人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
IPC分类号： H01J27/02
CPC分类号： H01J27/14 , C23C14/221 , C23C14/564 , H01J37/08 , H01J2237/022
摘要： An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.
摘要翻译：离子源包括等离子体生成室，设置在等离子体生成室内的至少一根细丝，与等离子体生成室对置配置的至少一个电极，构成为从等离子体产生室取出离子束，以及多个永久磁铁，其设置在等离子体生成室的外部，并且被构造成在等离子体生成室内部形成锐化的磁场，以及与等离子体产生室的壁的内表面平行设置的防沉积板。沉积防止板具有形成在与各永磁体相对的位置处的凹部，其中介于其间的等离子体产生室的壁。

2. 发明授权

US08604683B2 Bucket-type ion source for fanning cusped magnetic fields inside a plasma generation chamber 失效
标题翻译：用于在等离子体发生室内扇形尖锐磁场的铲斗型离子源
公开(公告)号：US08604683B2
公开(公告)日：2013-12-10
申请号：US13416369
申请日：2012-03-09
申请人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
发明人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
IPC分类号： H01J27/02
CPC分类号： H01J27/14 , C23C14/221 , C23C14/564 , H01J37/08 , H01J2237/022
摘要： An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.
摘要翻译：离子源包括等离子体生成室，设置在等离子体生成室内的至少一根细丝，与等离子体生成室对置配置的至少一个电极，构成为从等离子体产生室取出离子束，以及多个永久磁铁，其设置在等离子体生成室的外部，并且被构造成在等离子体生成室内部形成锐化的磁场，以及与等离子体产生室的壁的内表面平行设置的防沉积板。沉积防止板具有形成在与各永磁体相对的位置处的凹部，其中介于其间的等离子体产生室的壁。

3. 发明申请

US20120077331A1 MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR SUBSTRATE 有权
标题翻译：薄膜半导体基板的制造方法
公开(公告)号：US20120077331A1
公开(公告)日：2012-03-29
申请号：US13225039
申请日：2011-09-02
申请人： Toshiyuki SAMESHIMA , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
发明人： Toshiyuki SAMESHIMA , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
IPC分类号： H01L21/304
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/2658 , H01L21/76254
摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
摘要翻译：薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底沿着气泡层在绝缘基板的一侧形成半导体薄膜。在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。通过使用例如光束来进行半导体衬底的加热。

4. 发明授权

US08258043B2 Manufacturing method of thin film semiconductor substrate 有权
标题翻译：薄膜半导体衬底的制造方法
公开(公告)号：US08258043B2
公开(公告)日：2012-09-04
申请号：US13225039
申请日：2011-09-02
申请人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
发明人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/2658 , H01L21/76254
摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
摘要翻译：薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底沿着气泡层在绝缘基板的一侧形成半导体薄膜。在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。通过使用例如光束来进行半导体衬底的加热。

5. 发明授权

US06184624B2 Ion source 失效
标题翻译：离子源
公开(公告)号：US06184624B2
公开(公告)日：2001-02-06
申请号：US09318829
申请日：1999-05-26
申请人： Yutaka Inouchi
发明人： Yutaka Inouchi
IPC分类号： G01J724
CPC分类号： H01J27/18
摘要： A first coil is provided at a position near the start terminal (closer to the window) of plasma chamber. A second coil is provided at a position near the end terminal thereof (plasma electrode). To adjust an ion beam current, a constant current, which is capable of developing a magnetic field greater than a resonance magnetic field, is fed to the first coil, and a second coil current is varied within a range within which it develops a magnetic field less than the resonance magnetic field.
摘要翻译：第一线圈设置在等离子体室的起始端子（靠近窗口）附近的位置。在其末端（等离子体电极）附近的位置设置有第二线圈。为了调节离子束电流，能够产生大于谐振磁场的磁场的恒定电流被馈送到第一线圈，并且第二线圈电流在其产生磁场的范围内变化小于共振磁场。

6. 发明授权

US08147705B2 Method of operating ion source and ion implanting apparatus 有权
标题翻译：操作离子源和离子注入装置的方法
公开(公告)号：US08147705B2
公开(公告)日：2012-04-03
申请号：US11583040
申请日：2006-10-19
申请人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
发明人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
IPC分类号： C23F1/00 , H01J37/08
CPC分类号： C23C14/48 , H01J37/08 , H01J2237/082
摘要： When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.
摘要翻译：当通过使用含有三氟化硼的气体作为用于将气体供给到用于离子源2的等离子体室20的离子源气体50从离子源2中提取离子束4时，等离子体电极的偏置电压VB 31相对于离子源2的等离子体室20被偏置电路64设定为正。

7. 发明申请

US20070089833A1 Method of operating ion source and ion implanting apparatus 有权
标题翻译：操作离子源和离子注入装置的方法
公开(公告)号：US20070089833A1
公开(公告)日：2007-04-26
申请号：US11583040
申请日：2006-10-19
申请人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
发明人： Yutaka Inouchi , Syojiro Dohi , Yasunori Ando , Yasuhiro Matsuda
IPC分类号： C23F1/00
CPC分类号： C23C14/48 , H01J37/08 , H01J2237/082
摘要： When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.
摘要翻译：当通过使用含有三氟化硼的气体作为用于将气体供给到用于离子源2的等离子体室20中的离子源气体50从离子源2中提取离子束4时，偏置电压V B 相对于离子源2的等离子体室20，等离子体电极31的被偏置电路64设定为正。

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