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1. 发明申请

US20120077331A1 MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR SUBSTRATE 有权
标题翻译：薄膜半导体基板的制造方法
公开(公告)号：US20120077331A1
公开(公告)日：2012-03-29
申请号：US13225039
申请日：2011-09-02
申请人： Toshiyuki SAMESHIMA , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
发明人： Toshiyuki SAMESHIMA , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
IPC分类号： H01L21/304
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/2658 , H01L21/76254
摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
摘要翻译：薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底沿着气泡层在绝缘基板的一侧形成半导体薄膜。在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。通过使用例如光束来进行半导体衬底的加热。

2. 发明授权

US08258043B2 Manufacturing method of thin film semiconductor substrate 有权
标题翻译：薄膜半导体衬底的制造方法
公开(公告)号：US08258043B2
公开(公告)日：2012-09-04
申请号：US13225039
申请日：2011-09-02
申请人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
发明人： Toshiyuki Sameshima , Yutaka Inouchi , Takeshi Matsumoto , Yuko Fujimoto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/2658 , H01L21/76254
摘要： A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 μs to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.
摘要翻译：薄膜半导体衬底的制造方法包括将特定深度的离子注入到半导体衬底中，通过加热使绝缘体气化，在半导体衬底中形成气泡层，将绝缘衬底接合到半导体衬底上，并切割半导体衬底沿着气泡层在绝缘基板的一侧形成半导体薄膜。在成形时，将半导体衬底在大约1000℃至1200℃的温度范围内加热约10μs至100ms的范围。通过使用例如光束来进行半导体衬底的加热。

3. 发明授权

US08604683B2 Bucket-type ion source for fanning cusped magnetic fields inside a plasma generation chamber 失效
标题翻译：用于在等离子体发生室内扇形尖锐磁场的铲斗型离子源
公开(公告)号：US08604683B2
公开(公告)日：2013-12-10
申请号：US13416369
申请日：2012-03-09
申请人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
发明人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
IPC分类号： H01J27/02
CPC分类号： H01J27/14 , C23C14/221 , C23C14/564 , H01J37/08 , H01J2237/022
摘要： An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.
摘要翻译：离子源包括等离子体生成室，设置在等离子体生成室内的至少一根细丝，与等离子体生成室对置配置的至少一个电极，构成为从等离子体产生室取出离子束，以及多个永久磁铁，其设置在等离子体生成室的外部，并且被构造成在等离子体生成室内部形成锐化的磁场，以及与等离子体产生室的壁的内表面平行设置的防沉积板。沉积防止板具有形成在与各永磁体相对的位置处的凹部，其中介于其间的等离子体产生室的壁。

4. 发明申请

US20120229012A1 ION SOURCE 失效
标题翻译：离子源
公开(公告)号：US20120229012A1
公开(公告)日：2012-09-13
申请号：US13416369
申请日：2012-03-09
申请人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
发明人： Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
IPC分类号： H01J27/02
CPC分类号： H01J27/14 , C23C14/221 , C23C14/564 , H01J37/08 , H01J2237/022
摘要： An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.
摘要翻译：离子源包括等离子体生成室，设置在等离子体生成室内的至少一根细丝，与等离子体生成室对置配置的至少一个电极，构成为从等离子体产生室取出离子束，以及多个永久磁铁，其设置在等离子体生成室的外部，并且被构造成在等离子体生成室内部形成锐化的磁场，以及与等离子体产生室的壁的内表面平行设置的防沉积板。沉积防止板具有形成在与各永磁体相对的位置处的凹部，其中介于其间的等离子体产生室的壁。

5. 发明申请

US20110207306A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED ION IMPLANTATION PROCESS 审中-公开
标题翻译：使用改进的离子植入工艺制备半导体结构
公开(公告)号：US20110207306A1
公开(公告)日：2011-08-25
申请号：US12709833
申请日：2010-02-22
申请人： Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
发明人： Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
IPC分类号： H01L21/265
CPC分类号： H01L21/76254
摘要： Methods and apparatus for producing a semiconductor structure include: subjecting an implantation surface of a semiconductor wafer to an ion implantation process to create an exfoliation layer therein, wherein the ion implantation process includes simultaneously implanting two different species of ions into the implantation surface of the semiconductor wafer.
摘要翻译：用于制造半导体结构的方法和装置包括：使半导体晶片的注入表面进行离子注入工艺以在其中产生剥离层，其中离子注入工艺包括同时将两种不同种类的离子注入到半导体的注入表面中晶圆。

6. 发明授权

US08830004B2 Crystal resonator and crystal oscillator 有权
标题翻译：水晶谐振器和晶振
公开(公告)号：US08830004B2
公开(公告)日：2014-09-09
申请号：US13559601
申请日：2012-07-27
申请人： Mitsuaki Koyama , Toshihiko Kagami , Takeshi Matsumoto , Takeru Mutoh , Manabu Ishikawa , Shinichi Sato
发明人： Mitsuaki Koyama , Toshihiko Kagami , Takeshi Matsumoto , Takeru Mutoh , Manabu Ishikawa , Shinichi Sato
IPC分类号： H03H9/19 , G01N5/02 , H03H3/02 , H03H9/02
CPC分类号： H03H3/02 , H03H9/02 , H03H9/02086 , H03H9/542 , H03H9/566 , H03L1/023 , H03L1/028
摘要： A crystal resonator comprises a first vibrating region provided on a crystal wafer, a second vibrating region provided on the crystal wafer, the second vibrating region having a different thickness and positive/negative orientation of the X-axis from those of the first vibrating region, and excitation electrodes which are provided respectively on the first vibrating region and the second vibrating region for causing the vibrating regions to vibrate independently. Frequencies that change by different amounts from each other relative to a temperature change can be retrieved from one vibrating region and the other vibrating region. Thus, based on an oscillating frequency of the vibrating region in which a clear frequency change occurs relative to the temperature, the oscillating frequency of the other vibrating region can be controlled. Thereby, increases in the complexity of the crystal oscillator can be suppressed.
摘要翻译：晶体谐振器包括设置在晶体晶片上的第一振动区域，设置在晶体晶片上的第二振动区域，第二振动区域具有与第一振动区域不同的X轴的厚度和正/负取向，以及分别设置在第一振动区域和第二振动区域上用于使振动区域独立振动的激励电极。可以从一个振动区域和另一个振动区域检索相对于温度变化彼此变化的频率。因此，基于相对于温度发生明显的频率变化的振动区域的振荡频率，可以控制另一个振动区域的振荡频率。由此，可以抑制晶体振荡器的复杂性的增加。

7. 发明授权

US08824842B2 Optical semiconductor device and method for fabricating the optical semiconductor device 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US08824842B2
公开(公告)日：2014-09-02
申请号：US13043277
申请日：2011-03-08
申请人： Takeshi Matsumoto
发明人： Takeshi Matsumoto
IPC分类号： G02B6/34 , H01L33/00 , G02B6/12 , H01S5/22 , G02B6/124 , H01L21/02 , B82Y20/00 , H01S5/12 , H01S5/32 , H01S5/34
CPC分类号： H01S5/0268 , B82Y20/00 , G02B6/12007 , G02B6/124 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02513 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02639 , H01S5/1218 , H01S5/1231 , H01S5/2201 , H01S5/3202 , H01S5/3412 , H01S2304/04
摘要： An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.
摘要翻译：一种光学半导体器件，包括：多个第一衍射光栅层，沿着第一半导体层上的第一方向彼此间隔设置，多个第一衍射光栅中的每一个的第一方向的下表面的长度比第一方向长第一衍射光栅的上表面的长度; 第二衍射光栅层，沿着第一方向上的第一方向设置，第一和第二衍射光栅层以彼此间隔交替地设置，第二衍射光栅层的沿第一方向的上表面的长度比第一方向的长度长第二衍射层的下表面; 包括第一和第二衍射光栅层的衍射光栅; 第二半导体层，设置在第一和第二衍射光栅层之间并位于第二衍射光栅层之下; 以及设置在第一和第二衍射光栅层上的第三半导体层。

8. 发明申请

US20110206486A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20110206486A1
公开(公告)日：2011-08-25
申请号：US12971171
申请日：2010-12-17
申请人： Kenichirou MATSUYAMA , Takeshi Matsumoto
发明人： Kenichirou MATSUYAMA , Takeshi Matsumoto
IPC分类号： H01L21/67
CPC分类号： H01L21/67225 , H01L21/67196
摘要： Even when a module constituting a multi-module becomes an unavailable module, transfer of substrates can be promptly performed, while restricting generation of inferior products. When a destination module of a multi-module becomes unavailable before a substrate is transferred to the destination module, a destination of the substrate is changed to a module to which a substrate subsequent to the substrate is to be loaded. Upon generation of an unavailable module, before the transfer unit accesses the module on an upstream end of the transfer cycle, the transfer cycle proceeds until a precedent substrate becomes ready to be unloaded from the changed destination module. Alternatively, upon generation of an unavailable module, when the transfer unit is located on an upstream side of the unavailable module in the transfer cycle, the transfer operation of the transfer unit is made standby until a precedent substrate becomes ready to be unloaded in the changed destination module.
摘要翻译：即使构成多模块的模块成为不可用模块，也可以迅速地进行基板的转印，同时限制劣质产品的产生。当在将基板传送到目的地模块之前，多模块的目的地模块变得不可用时，将基板的目的地改变为要在基板之后的基板被加载到的模块。在生成不可用模块之前，在传送单元在传送周期的上游端访问模块之前，传送周期继续进行，直到先前的基板准备好从改变的目的地模块卸载。或者，当生成不可用模块时，当传送单元位于传送周期中的不可用模块的上游侧时，传送单元的传送操作被备用直到先前的基板准备好在改变后的装载中被卸载目的地模块。

9. 发明授权

US07886314B2 Disk device, shutter control device, and computer program for shutter opening/closing control 失效
标题翻译：磁盘设备，快门控制装置和用于快门打开/关闭控制的计算机程序
公开(公告)号：US07886314B2
公开(公告)日：2011-02-08
申请号：US11886881
申请日：2006-03-27
申请人： Hiroyuki Matsumoto , Takeshi Matsumoto , Katsunori Tamamura , Takao Yoshida , Fumito Inaba , Makoto Ikehata
发明人： Hiroyuki Matsumoto , Takeshi Matsumoto , Katsunori Tamamura , Takao Yoshida , Fumito Inaba , Makoto Ikehata
IPC分类号： G11B33/02
CPC分类号： G11B17/0405 , G11B17/0407
摘要： To assuredly determine whether a shutter pinches a disk in a disk device including a shutter at a disk insertion slot. A shutter control device 10 includes a pinch determining unit 14 that determines whether the disk is pinched by the shutter based on a position of the shutter during a process of closing the shutter, and a sensitivity changing unit that sets sensitivity of determination to be high as ambient temperature of a shutter driving mechanism increases.
摘要翻译：为了确定地确定快门是否在包括盘插入槽的快门的盘装置中夹住盘。快门控制装置10包括捏合确定单元14，其确定在关闭快门的过程期间基于快门的快门的盘被盘夹住;以及灵敏度改变单元，其将确定的灵敏度设置为高，如快门驱动机构的环境温度升高。

10. 发明授权

US07705983B2 Wavelength displacement correcting system 有权
标题翻译：波长位移校正系统
公开(公告)号：US07705983B2
公开(公告)日：2010-04-27
申请号：US12020797
申请日：2008-01-28
申请人： Kenji Imura , Takeshi Matsumoto
发明人： Kenji Imura , Takeshi Matsumoto
IPC分类号： G01J3/28
CPC分类号： G01J3/18 , G01J3/02 , G01J3/027 , G01J3/28 , G01J3/2803 , G01J2003/2866
摘要： A wavelength displacement correcting system and method where a monochromatic beam from an LED is incident through an incident slit of a spectral device and is diffracted on a diffraction grating to form a dispersed light image. Information relating to the dispersed light image is outputted and a wavelength displacement is calculated, using a forward voltage value corresponding to the constant current, and a forward voltage initial value. Wavelength displacement amounts of at least two diffracted beams are calculated, using output values of the at least two diffracted beams, and diffracted beam output initial values with respect to the dispersed light image. A dispersion width is calculated, using the calculated wavelength displacement amount of the beam, and the calculated wavelength displacement amounts of at least two diffracted beams.
摘要翻译：一种波长位移校正系统和方法，其中来自LED的单色光束通过光谱器件的入射狭缝入射并衍射在衍射光栅上以形成分散的光图像。输出与分散的光图像相关的信息，并且使用与恒定电流对应的正向电压值和正向电压初始值来计算波长位移。使用至少两个衍射光束的输出值和相对于分散光图像的衍射光束输出初始值来计算至少两个衍射光束的波长位移量。使用计算出的波束位移量和至少两个衍射光束的计算波长位移量来计算色散宽度。

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